1. Effects of electrode material and configuration on the characteristics of planar resistive switching devices
- Author
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H.Y. Peng, K. Li, Junfeng Ding, A. David, J.H. Hong, Yangyang Li, Weinan Lin, Tao Wu, L. Pu, J.C. Wu, Dong Kyu Cha, david, adrian, School of Physical and Mathematical Sciences, Tsinghua University [Beijing] (THU), School of Biomedical Engineering and Med-X Research Institute, and Shanghai Jiao Tong University [Shanghai]
- Subjects
Materials science ,lcsh:Biotechnology ,Oxide ,02 engineering and technology ,Geometric shape ,01 natural sciences ,chemistry.chemical_compound ,Planar ,Electrical resistivity and conductivity ,lcsh:TP248.13-248.65 ,Electric field ,0103 physical sciences ,[CHIM] Chemical Sciences ,[CHIM]Chemical Sciences ,General Materials Science ,Work function ,Ohmic contact ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,[CHIM.MATE] Chemical Sciences/Material chemistry ,business.industry ,General Engineering ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,lcsh:QC1-999 ,Engineering::Materials [DRNTU] ,chemistry ,Electrode ,Optoelectronics ,0210 nano-technology ,business ,lcsh:Physics - Abstract
We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. Published version
- Published
- 2013