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15 results on '"Maud Baylac"'

1. Status and prospects of the 60 GHz SEISM ion source

Author

Thomas Andre, Julien Angot, Maud Baylac, Pierre Olivier Dumont, Thierry Lamy, Patrick Sole, Thomas Thuillier, Francois Debray, Ivan Izotov, Vadim Skalyga, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Laboratoire national des champs magnétiques intenses - Grenoble (LNCMI-G), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), and Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)

Subjects
History, Physics::Plasma Physics, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Physics::Accelerator Physics, Computer Science Applications, Education
Abstract

SEISM is a unique ECR ion source operating at a frequency of 60 GHz. The prototype is based on a simple magnetic geometry, the cusp, allowing the use of polyhelix coils (developed with LNCMI, Grenoble) to generate the closed ECR surface at 2.14T. The plasma is sustained by a high intensity HF pulse (up to 300kW). Previous experiments at LNCMI have successfully demonstrated the establishment of the nominal magnetic field and the extraction of ion beams with a current density up to 1 A cm-2. The presence of afterglow peaks was also observed, proving the existence of ion confinement in a CUSP ECR source. An experimental campaign is carried out in 2021 using a new transport line designed to improve the transmission of the beam to the new detectors. Short and long-term research plans are presented to transform this high current density into a high intensity ion beam that can be used for accelerators of the future.

Published
2021
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2. Recent improvements of the LPSC charge breeder

Author

Josua Jacob, Olli Tarvainen, J. Angot, Thomas Thuillier, Patrick Solé, Maud Baylac, T. Lamy, Myriam Migliore, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Lettry, Jacques, Mahner, Edgar, Marsh, Bruce, Pardo, Richard, and Scrivens, Richard

Subjects
010302 applied physics, Materials science, ta114, Nuclear engineering, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], syklotronit, Charge (physics), plasmatekniikka, 01 natural sciences, 7. Clean energy, 010305 fluids & plasmas, electron cyclotron resonance, Breeder (animal), 0103 physical sciences, plasma
Abstract

International audience; PSC has developed the PHOENIX electron cyclotron resonance Charge Breeder since 2000. The performances have been improved over time acting on the 1+ and N+ beam optics, the base vacuum and the 1+ beam injection. A new objective is to update the booster design to enhance high charge state production and 1+ N+ efficiencies, reduce the co-extracted background beam and improve the ion source tunability. The first step, consisting in increasing the peak magnetic field at injection from 1.2 T to 1.6 T was implemented and significant improvement in 1+N+ efficiencies are reported: 12.9% of 23Na8+, 24.2% of 40Ar8+, 13.3% of 132Xe26+ and 13% of 133Cs26+. The next steps of the upgrade are presented: modification of the axial magnetic structure, significant increase of the plasma chamber radius (72 to 90 mm), plasma heating at 18 GHz (instead of 14 GHz), reduction of chemical elements composing the plasma chamber wall and the surrounding beam line.

Published
2018
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3. SEU Characterization of Three Successive Generations of COTS SRAMs at Ultralow Bias Voltage to 14.2-MeV Neutrons

Author

Guillaume Hubert, Juan A. Fraire, Francesca Villa, Maud Baylac, Hortensia Mecha, Raoul Velazco, Solenne Rey, Helmut Puchner, Juan Antonio Clemente, Francisco J. Franco, ONERA - The French Aerospace Lab [Toulouse], ONERA, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Nuclear and High Energy Physics, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Electronic mail, RADIATION HARDNESS, Hardware, 0103 physical sciences, COMMERCIAL OFF-THE-SHELF (COTS), LOW BIAS VOLTAGE, Static random-access memory, Electrical and Electronic Engineering, Circuitos integrados, Radiation hardening, 010302 applied physics, Physics, 010308 nuclear & particles physics, business.industry, Electrical engineering, Biasing, NEUTRON TESTS, SOFT ERROR, Ciencias de la Computación, Soft error, Nuclear Energy and Engineering, CMOS, 13. Climate action, Single event upset, Ciencias de la Computación e Información, RELIABILITY, STATIC RANDOM ACCESS MEMORIES (SRAM), Física nuclear, Electrónica, business, CIENCIAS NATURALES Y EXACTAS, Voltage
Abstract

This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage of three generations of commercial off-the-shelf static random access memories (SRAMs) manufactured in 130-, 90-, and 65-nm CMOS processes. For this purpose, radiation tests with 14.2-MeV neutrons were performed for SRAM power supplies ranging from 0.5 to 3.15 V. The experimental results yielded clear evidences of the SEU sensitivity increase at very low bias voltages. These results have been cross-checked with predictions issued from the modeling tool multiscales single event phenomena predictive platform. Large-scale single event latchups and single event functional interrupts (SEFIs), observed in the 90- and 130-nm SRAMs, respectively, are also presented and discussed. Fil: Clemente, Juan Antonio. Universidad Complutense de Madrid; España Fil: Hubert, Guillaume. Office National d'Etudes et de Recherches Aérospatiales; Francia Fil: Fraire, Juan Andres. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba; Argentina. Université Grenoble-Alpes; Francia. Universidad Nacional de Córdoba; Argentina Fil: Franco, Francisco J.. Universidad Complutense de Madrid; España Fil: Villa, Francesca. Université Grenoble-Alpes; Francia Fil: Rey, Solenne. Université Grenoble-Alpes; Francia Fil: Baylac, Maud. Université Grenoble-Alpes; Francia Fil: Puchner, Helmut. Cypress Semiconductor Corporation; Estados Unidos Fil: Mecha, Hortensia. Universidad Complutense de Madrid; España Fil: Velazco, Raoul. Universidad Nacional de Córdoba; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba; Argentina. Université Grenoble-Alpes; Francia

Published
2018
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4. Charge breeding time investigations of electron cyclotron resonance charge breeders

Author

Olli Tarvainen, J. Angot, Thomas Thuillier, Josua Jacob, Patrick Solé, Maud Baylac, T. Lamy, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, Nuclear and High Energy Physics, Materials science, Physics and Astronomy (miscellaneous), ta114, syklotronit, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], electrons, Charge (physics), Surfaces and Interfaces, resonanssi, elektronit, 7. Clean energy, 01 natural sciences, Electron cyclotron resonance, 010305 fluids & plasmas, resonance, 0103 physical sciences, charge breeders, lcsh:QC770-798, lcsh:Nuclear and particle physics. Atomic energy. Radioactivity, Atomic physics, cyclotrons, Review Articles
Abstract

To qualify electron cyclotron resonance charge breeders, the method that is traditionally used to evaluate the charge breeding time consists in generating a rising edge of the injected beam current and measuring the time in which the extracted multicharged ion beam reaches 90% of its final current. It is demonstrated in the present paper that charge breeding times can be more accurately measured by injecting short pulses of 1 + ions and recording the time resolved responses of N + ions. This method is used to probe the effect of the 1 + ion accumulation in the plasma known to disturb the buffer gas plasma equilibrium and is a step further in understanding the large discrepancies reported in charge breeding times. The experiments are conducted injecting a 85 Rb + ion beam into the Laboratoire de Physique Subatomique et de Cosmologie (LPSC) charge breeder operated with helium as a buffer gas. The time needed for the extraction of 90% of the multicharged ions in short pulse mode is found slightly shorter (9%) than the charge breeding time measured with the traditional method. The charge breeding efficiency is identical with both methods. The pulse width and amplitude of the 1 + injection pulses have been varied to study their influence on the N + response and temporal parameters are proposed to qualify the time response. The short pulse method can be used to study the influence of the ion source tuning parameters on the charge breeding temporal characteristics. For example, it is shown here that an increase of the minimum magnetic field strength of the LPSC charge breeder in the range 0.432–0.444 T improves the multicharged ion confinement in the electron cyclotron resonance plasma, and so increases the charge breeding efficiency. The short pulse method is also used to estimate the charge breeding efficiencies of radioactive Rb isotopes taking into account their half-lives and charge states. The neutron-rich heavy isotopes have short half-lives, which makes the charge state distributions shift to lower charge states and the estimated charge breeding efficiencies of high charge states being close to three times less in comparison to the stable ions. peerReviewed

Published
2018
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5. Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs

Author

Solenne Rey, Guillaume Hubert, Juan Antonio Clemente, Maud Baylac, Raoul Velazco, Francisco J. Franco, Hortensia Mecha, Helmut Puchner, Juan A. de Agapito, Francesca Villa, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ONERA - The French Aerospace Lab [Toulouse], ONERA, Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, Nuclear and High Energy Physics, Random access memory, Engineering, 010308 nuclear & particles physics, business.industry, Voltage control, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Monte Carlo method, Electrical engineering, 01 natural sciences, Ordenadores, Electronic mail, Set (abstract data type), Microcontroller, Nuclear Energy and Engineering, 0103 physical sciences, Electrónica, Física nuclear, Electrical and Electronic Engineering, business, Circuitos integrados, Algorithm, Event (probability theory)
Abstract

International audience; This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bit flip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are single bit upsets. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).

Published
2017
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6. Some Properties of only-SBUs Scenarios in SRAMs Applied to the Detection of MCUs

Author

Juan A. de Agapito, Hortensia Mecha, Helmut Puchner, Maud Baylac, Francisco J. Franco, Raoul Velazco, Juan Antonio Clemente, Solenne Rey, Francesca Villa, Guillaume Hubert, Department of Computer Architecture and Automation [Madrid], Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Cypress Semiconductor [San Jose], ONERA - The French Aerospace Lab [Toulouse], ONERA, Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universidad Complutense de Madrid [Madrid] (UCM), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Cypress Semiconductor, Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
010302 applied physics, Structure (mathematical logic), Random access memory, Hardware_MEMORYSTRUCTURES, 010308 nuclear & particles physics, Computer science, business.industry, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], 01 natural sciences, Electronic mail, Embedded system, PACS 85.42, 0103 physical sciences, SBus, Static random-access memory, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; Statistical properties of experiments in SRAMs with only SBUs are mathematically evaluated. Strategies using deviations of actual data from theory are proposed to extract MCUs from the bulk of errors regardless the SRAM internal structure.

Published
2016
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7. Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs from MCUs

Author

Juan Antonio Clemente, Francisco J. Franco, Francesca Villa, Maud Baylac, Solenne Rey, Hortensia Mecha, Juan A. Agapito, Helmut Puchner, Guillaume Hubert, Raoul Velazco, Department of Computer Architecture and Automatic [Madrid] (UCM), Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Cypress Semiconductor [San Jose], ONERA - The French Aerospace Lab [Toulouse], ONERA, Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universidad Complutense de Madrid [Madrid] (UCM), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Cypress Semiconductor, Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Nuclear and High Energy Physics, 010308 nuclear & particles physics, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Single event upsets, 01 natural sciences, Multiple cell upsets, [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph], Hardware, Nuclear Energy and Engineering, 0103 physical sciences, Neutron tests, SRAMS, Electrical and Electronic Engineering, 010306 general physics
Abstract

International audience; Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer.

Published
2016
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8. Evaluating the SEE sensitivity of a 45nm SOI Multi-core Processor due to 14 MeV Neutrons

Author

Nacer-Eddine Zergainoh, Raoul Velazco, Vanessa Vargas, Maud Baylac, Juan Antonio Clemente, Pablo Ramos, Solenne Rey, Francesca Villa, Jean-François Méhaut, Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universidad de las Fuerzas Armadas [Sangolqui] (ESPE), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Department of Computer Architecture and Automatic [Madrid] (UCM), Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Compiler Optimization and Run-time Systems (CORSE), Inria Grenoble - Rhône-Alpes, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-Laboratoire d'Informatique de Grenoble (LIG ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-11-LABX-0025,PERSYVAL-lab,Systemes et Algorithmes Pervasifs au confluent des mondes physique et numérique(2011), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Universidad Complutense de Madrid [Madrid] (UCM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-Laboratoire d'Informatique de Grenoble (LIG), Université Pierre Mendès France - Grenoble 2 (UPMF)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Université Pierre Mendès France - Grenoble 2 (UPMF)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), and ANR-11-LABX-0025-01,PERSYVAL-lab,Systèmes et Algorithmes Pervasifs au confluent des mondes physique et numérique(2011)

Subjects
Nuclear and High Energy Physics, Soft Error, Computer science, CPU cache, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Silicon on insulator, 02 engineering and technology, Radiation, 01 natural sciences, Hardware, Nuclear electronics, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Neutron, Electrical and Electronic Engineering, Multi-core, Circuitos integrados, AMP, SOI, Multi-core processor, Hardware_MEMORYSTRUCTURES, 010308 nuclear & particles physics, SEFI, SMP, Radiactividad, SEE, 020202 computer hardware & architecture, Soft error, Nuclear Energy and Engineering, Accelerated testing, Electrónica, Física nuclear, Cache, [INFO.INFO-DC]Computer Science [cs]/Distributed, Parallel, and Cluster Computing [cs.DC], SEU
Abstract

International audience; The aim of this work is to evaluate the SEE sensitivity of a multi-core processor having implemented ECC and parity in their cache memories. Two different application scenarios are studied. The first one configures the multi-core in Asymmetric Multi-Processing mode running a memory-bound application, whereas the second one uses the Symmetric Multi-Processsing mode running a CPU-bound application. The experiments were validated through radiation ground testing performed with 14 MeV neutrons on the Freescale P2041 multi-core manufactured in 45nm SOI technology. A deep analysis of the observed errors in cache memories was carried-out in order to reveal vulnerabilities in the cache protection mechanisms. Critical zones like tag addresses were affected during the experiments. In addition, the results show that the sensitivity strongly depends on the application and the multi-processsing mode used.

Published
2016
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9. Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

Author

Hortensia Mecha, Vanessa Vargas, Juan A. de Agapito, Maud Baylac, Pablo Ramos, Raoul Velazco, Francisco J. Franco, Juan Antonio Clemente, Francesca Villa, Department of Computer Architecture and Automation [Madrid], Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Departamento de Fisica Aplicada [UCM Madrid], Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universidad de las Fuerzas Armadas [Sangolqui] (ESPE), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Universidad Complutense de Madrid [Madrid] (UCM), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)

Subjects
Nuclear and High Energy Physics, Engineering, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, Ordenadores, 01 natural sciences, law.invention, neutron, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Static random-access memory, Sensitivity (control systems), Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010308 nuclear & particles physics, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Biasing, SRAM, Radiactividad, Capacitor, Soft error, PACS 8542, Nuclear Energy and Engineering, CMOS, 13. Climate action, Power, Electrónica, business, Low voltage, SEU, Voltage
Abstract

International audience; This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported.

Published
2015
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10. Statistical anomalies of bitflips in SRAMS to discriminate MCUS SEUS

Author

Guillaume Hubert, Juan A. de Agapito, Maud Baylac, Francesca Villa, Hortensia Mecha, Solenne Rey, Raoul Velazco, Helmut Puchner, Francisco J. Franco, Juan Antonio Clemente, Universidad Complutense de Madrid [Madrid] (UCM), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Cypress Semiconductor, ONERA - The French Aerospace Lab [Toulouse], ONERA, Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Cypress Semiconductor [San Jose], Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, Random access memory, 010308 nuclear & particles physics, business.industry, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], 02 engineering and technology, 01 natural sciences, Radiactividad, Electronic mail, 020202 computer hardware & architecture, PACS 8542, CMOS, Computer engineering, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrónica, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Field-programmable gate array, Circuitos integrados
Abstract

Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer.

Published
2015
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11. Grenoble Large Scale Facilities for advanced characterisation of microelectronics devices

Author

J. Beaucour, J. Segura-Ruiz, Maud Baylac, B. Giroud, Francesca Villa, Solenne Rey, E. Capria, E. Mitchell, C. Curfs, J. C. Royer, Institut Laue-Langevin (ILL), ILL, European Synchrotron Radiation Facility (ESRF), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), GENEPI2, and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, 010308 nuclear & particles physics, business.industry, Scale (chemistry), [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Electrical engineering, reliability, tomography, 7. Clean energy, 01 natural sciences, failure analysis, 0103 physical sciences, Systems engineering, devices characterisation, Microelectronics, business, Neutron irradiation, neutron irradiation, thermal neutrons
Abstract

IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP15449-CDR (CD-ROM) ISBN: 978-1-5090-0230-6 (CD-ROM) IEEE Catalog Number: CFP15449-PRT (PRINT) ISBN: 978-1-5090-0231-3 (PRINT); International audience; The French IRT-nanoelec consortium in collaboration with GENEPI2 acceleratoris offering world unique and complementary techniques for Hirel componentscharacterization. Part of this capability is the high and low (thermal) energyneutron testing of devices.

Published
2015
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12. Neutron-induced single events in a cots soft-errir free SRAM at low bias voltage

Author

Vanessa Vargas, Pablo Ramos, Francisco J. Franco, Maud Baylac, Francesca Villa, Hortensia Mecha, Juan A. de Agapito, Juan Antonio Clemente, Raoul Velazco, Universidad Complutense de Madrid [Madrid] (UCM), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Biasing, Radiactividad, Electronic mail, Soft error, PACS 8542, CMOS, Electronic engineering, Neutron, Electrónica, Static random-access memory, Sensitivity (control systems), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Circuitos integrados, Low voltage
Abstract

IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP15449-CDR (CD-ROM) ISBN: 978-1-5090-0230-6 (CD-ROM) IEEE Catalog Number: CFP15449-PRT (PRINT) ISBN: 978-1-5090-0231-3 (PRINT); International audience; This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.

Published
2015
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13. Sensitivity to Neutron Radiation of a 45 nm SOI Multi-Core Processor

Author

Maud Baylac, Francesca Villa, Vanessa Vargas, Juan Antonio Clemente, Raoul Velazco, Nacer-Eddine Zergainoh, Pablo Ramos, Solenne Rey, Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Universidad Complutense de Madrid [Madrid] (UCM), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), and Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM)

Subjects
Engineering, Multi-core processor, Hardware_MEMORYSTRUCTURES, business.industry, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Silicon on insulator, Multiprocessing, Hardware_PERFORMANCEANDRELIABILITY, Radiation, Neutron radiation, PACS 8542, Electronic engineering, Neutron, Cache, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Error detection and correction
Abstract

IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE)IEEE Catalog Number: CFP15449-CDR (CD-ROM) ISBN: 978-1-5090-0230-6 (CD-ROM)IEEE Catalog Number: CFP15449-PRT (PRINT) ISBN: 978-1-5090-0231-3 (PRINT); International audience; The purpose of this paper is to evaluate the SEU sensitivity of a multi-core SoC working in two different multiprocessing modes. Radiation ground tests were performed with 14 MeV neutrons in GENEPI2 facility. The case study was a 45nm SOI multi-core processor having implemented error correcting code (ECC) and parity in their cache memories.

Published
2015
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14. Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation

Author

Maud Baylac, Francesca Villa, Solenne Rey, Francisco J. Franco, Raoul Velazco, O. Rosetto, Juan Antonio Clemente, C. Palomar, Guillaume Hubert, Wassim Mansour, Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Department of Computer Architecture and Automatic [Madrid] (UCM), Universidad Complutense de Madrid [Madrid] (UCM), ONERA - The French Aerospace Lab [Toulouse], ONERA, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] (UCM), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Nuclear and High Energy Physics, Computer science, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], COTS, Hardware_PERFORMANCEANDRELIABILITY, soft error, soft errors, radiation hardness, LPSRAM, law.invention, Memory cell, law, MUSCA SEP3, Electronic engineering, Static random-access memory, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Circuitos integrados, Radiation hardening, Hardware_MEMORYSTRUCTURES, reliability, Neutron radiation, SRAM, [PHYS.PHYS.PHYS-SPACE-PH]Physics [physics]/Physics [physics]/Space Physics [physics.space-ph], Capacitor, Soft error, Nuclear Energy and Engineering, CMOS, neutron tests, Electrónica, Dram
Abstract

International audience; Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section. These tests led to cross-section values two orders of magnitude below those of typical CMOS SRAMs in the same technology node. MUSCA SEP3 simulations complement these results predicting that only high-energy neutrons ( > 30 MeV) can provoke bit flips in the studied SRAMs. MUSCA SEP3 is also used to investigate the sensitivity of the studied SRAM to radioactive contamination and to compare it with the one of standard CMOS SRAMs. Results are useful to make predictions about the operation of this memory in environments such as avionics.

Published
2014
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15. Accelerator-based neutron irradiation of integrated circuits at GENEPI2 (France)

Author

O. Rossetto, Maud Baylac, Solenne Rey, Pablo Ramos, Raoul Velazco, Francesca Villa, Wassim Mansour, Guillaume Hubert, Laboratoire de Physique Subatomique et de Cosmologie (LPSC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)

Subjects
Nuclear physics, Physics, law, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Neutron, Irradiation, Integrated circuit, Neutron irradiation, law.invention
Abstract

GENEPI2 is an accelerator facility located in Grenoble (France) which can provide neutrons of 3 MeV or 15 MeV. Preliminary irradiation of SRAMs showed results compatible with those issued from other facilities.

Published
2014
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