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12 results on '"Agnus, Guillaume"'

1. Development of an AFM-based technique for extended write/erase endurance measurements of memristive cells

Author

Mai, Van, Nguyen, Van, Senzier, Pascale, Pasquier, Claude, Wang, Kang, Rozenberg, Marcelo, Giapintzakis, John, Kyriakides, Evripides, Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, Nguyen, Ngoc, Oukassi, Sami, Salot, Raphaël, Alamarguy, David, Chrétien, Pascal, Lacroix, Jean- Christophe, Schneegans, Olivier, Le Quy Don Technical University = Le Quy Don University of Science and Technology, Institut National de L'Energie Solaire (INES), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies (C2N), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Interfaces, Traitements, Organisation et Dynamique des Systèmes (ITODYS (UMR_7086)), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Paris (UP), Le Quy Don Technical University (LQDTU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Paris Cité (UPCité)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2021

2. Endurance measurements of LixCoO2-based ReRAM cells

Author

Nguyen, Van Son, Mai, Van Huy, Alexandre, Moradpour, Auban-Senzier, Pascale, Pasquier, Claude, Wang, Kang, Rozenberg, Marcelo J., Brun, Nathalie, March, Katia, Albouy, Pierre-Antoine, Giapintzakis, John, Mihailescu, C N, Kyriakides, Evripides, C.M., Orfanidou, Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, Matzen, Silvia, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Alamarguy, David, Chrétien, Pascal, Nukala, Pavan, Dkhil, Brahim, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), CEA-Grenoble DRT/LITEN/DEHT/SRGE/LQS, CEA, Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2018

3. Direct Evidence of Lithium Ion Migration in Resistive Switching of Lithium Cobalt Oxide Nanobatteries

Author

Nguyen, Van Son, Mai, Van Huy, Senzier, Pascale Auban, Pasquier, Claude, Wang, Kang, Rozenberg, Marcelo J., Brun, Nathalie, March, Katia, Jomard, François, Giapintzakis, John, Mihailescu, Cristian N., Kyriakides, Evripides, Nukala, Pavan, Maroutian, Thomas, Agnus, Guillaume, Lecoeur, Philippe, Matzen, Silvia, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Albouy, Pierre-Antoine, Alamarguy, David, Dkhil, Brahim, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Laboratoire de Physique des Solides (LPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), National Institute for Lasers, Plasma, and Radiation Physics - INFLPR (ROMANIA), University of Cyprus = Université de Chypre, Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Département d'Architectures, Conception et Logiciels Embarqués-LETI (DACLE-LETI), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-LABX-0035,Nano-Saclay,Paris-Saclay multidisciplinary Nano-Lab(2010), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], University of Cyprus, Cyprus, Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Giapintzakis, John [0000-0002-7277-2662], and Kyriakides, Evripides [0000-0002-5483-7119]

Subjects
Materials science, Direct evidence, thin film, Oxide, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Biomaterials, chemistry.chemical_compound, lithium‐ion batteries, 0103 physical sciences, General Materials Science, Thin film, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Lithium cobalt oxide, nonvolatile memories, 010302 applied physics, business.industry, resistive switching, General Chemistry, 021001 nanoscience & nanotechnology, chemistry, Nanoelectronics, Resistive switching, oxides, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Lithium, Nanobatteries, 0210 nano-technology, business, Biotechnology
Abstract

International audience; Lithium cobalt oxide nanobatteries offer exciting prospects in the field of nonvolatile memories and neuromorphic circuits. However, the precise underlying resistive switching (RS) mechanism remains a matter of debate in two‐terminal cells. Herein, intriguing results, obtained by secondary ion mass spectroscopy (SIMS) 3D imaging, clearly demonstrate that the RS mechanism corresponds to lithium migration toward the outside of the Li$_x$CoO$_2$ layer. These observations are very well correlated with the observed insulator‐to‐metal transition of the oxide. Besides, smaller device area experimentally yields much faster switching kinetics, which is qualitatively well accounted for by a simple numerical simulation. Write/erase endurance is also highly improved with downscaling – much further than the present cycling life of usual lithium‐ion batteries. Hence very attractive possibilities can be envisaged for this class of materials in nanoelectronics.

Published
2018
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4. Cobalt oxide thin films towards non volatile memory applications

Author

Nguyen, van Son, Mai, van Huy, Alexandre, Moradpour, Auban Senzier, Pascale, Pasquier, Claude, Wang, Kang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Brun, Nathalie, March, Katia, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Département Intégration Hétérogène sur Silicium (DIHS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2017

5. Effects of Voltage Pulse Characteristics on some Performance Parameters of LixCoO2-based Resistive Switching Memory Devices

Author

Nguyen, van Son, Mai, van Huy, Alexandre, Moradpour, Auban Senzier, Pascale, Pasquier, Claude, Kang, Wang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Brun, Nathalie, March, Katia, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University = Le Quy Don University of Science and Technology, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University (LQDTU), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2017

6. Étude de la commutation de cellules de mémoires résistives d’oxydes de cobalt par AFM à pointe conductrice

Author

Nguyen, van Son, Mai, van Huy, Alexandre, Moradpour, Auban Senzier, Pascale, Pasquier, Claude, Kang, Wang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, Brun, Nathalie, March, Katia, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Le Quy Don Technical University, Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Département Intégration Hétérogène sur Silicium (DIHS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2017

7. Functional oxides induced strain for silicon photonics applications

Author

Marcaud, Guillaume, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Berciano, Mathias, Pillard, Valérie, Damas, Pedro, Maroutian, Thomas, Agnus, Guillaume, Largeau, Ludovic, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), and Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Silicon photonics is expected to allow the implementation of a wide range of applications including sensing, datacom and security with the potential to leverage the already existing CMOS fabrication facilities for cost-effective and large production. Among the building blocks to develop, optical modulator is considered as a key device for integrated circuits. The main physical effect to perform optical modulation in silicon is based on plasma dispersion effect. However the maximum modulation speed achievable with this approach is limited by the mobility and recombination time of the carriers. Furthermore, these types of modulators face some limitations in terms of power consumption, chirp and loss that may compromise their future integration in integrated circuits. The purpose of this work is to explore an alternative approach, based on the use of the Pockels effect. Such an effect, commonly used in Lithium-Niobate, allows high speed and low power consumption optical modulation. Unfortunately silicon is a centro-symmetric crystal leading to a vanishing of the second order nonlinear coefficient, i.e. no Pockels effect. To overcome this limitation, it is possible to break the crystal symmetry by straining the silicon lattice. The new approach developed here is to generate strain by the epitaxial growth of crystalline functional oxides, which exhibit more appropriate strain-induced characteristics in silicon than the use of silicon nitride with lower defect concentration at the Si/oxide interface. Indeed, these functional oxides are deposited by epitaxial growth at high temperature on silicon with pulsed-laser deposition. The induced strain due to lattice parameter mismatch and the difference in the thermal expansion coefficients between oxides and silicon are strong. Furthermore, these functional oxides exhibit very interesting multiferroicity and piezoelectricity properties that paves the way to a new route to implement silicon photonic circuits with unprecedented functionalities. Last results on the integration of high quality oxides on silicon waveguides will be presented as well as a full characterization of the strain-induced property changes including X-ray diffraction, AFM-SEM microscopies, and Raman spectroscopy. The first experiments of light propagation in hybrid oxides on silicon photonic structures will be also reported.

Published
2017

8. Functional oxides on Silicon and Sapphire substrates for photonic applications

Author

Marcaud, Guillaume, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Berciano, Mathias, Pillard, Valerie, Damas, Pedro, Maroutian, Thomas, Agnus, Guillaume, Largeau, Ludovic, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, VIVIEN, Laurent, and Low power consumption silicon optoelectronics based on strain and refractive index engineering - POPSTAR - - H20202015-10-01 - 2020-10-01 - 647342 - VALID

Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Silicon photonics is expected to allow the implementation of a wide range of applications including sensing, datacom and security with the potential to leverage the already existing CMOS fabrication facilities for cost-effective and large production. Among the building blocks to develop, optical modulator is considered as a key device for integrated circuits. The main physical effect to perform optical modulation in silicon is based on plasma dispersion effect. However the maximum modulation speed achievable with this approach is limited by the mobility and recombination time of the carriers. Furthermore, these types of modulators face some limitations in terms of power consumption, chirp and loss that may compromise their future integration in circuits. Our work focuses on the integration of Yttria-Stabilized Zirconia (YSZ) functional oxide on sapphire substrates and on silicon. The common aim for both integrations is to induce nonlinear optical effects at the wavelength around 1550nm, thanks to strain tuning in full oxide-or in hybrid oxide/Si-photonic structures. Indeed, we explore an alternative approach, based on the use of the Pockels effect for optical modulation [1]. Such an effect, commonly used in Lithium-Niobate, allows high speed and low power consumption optical modulation [2]. Unfortunately silicon is a centro-symmetric crystal leading to a vanishing of the second order nonlinear coefficient, i.e. no Pockels effect. To overcome this limitation, it is possible to break the crystal symmetry by straining the silicon lattice [3]. The new approach developed here is to generate strain by the epitaxial growth of crystalline functional oxides, which exhibit more appropriate strain-induced characteristics than the use of silicon nitride with lower defect concentration at the Si/oxide interface. Indeed, these functional oxides are deposited by epitaxial growth at high temperature with pulsed-laser deposition [4], [5]. The induced strain due to lattice parameter mismatch and the difference in the thermal expansion coefficients between oxides and silicon are strong. Furthermore, functional oxides exhibit very interesting multiferroicity and piezoelectricity properties that pave the way to a new route to implement silicon photonic circuits with unprecedented functionalities. Our study includes:-Epitaxial growth of YSZ functional oxide by pulsed-laser deposition and material characterizations with several complementary techniques such as X-ray diffraction, atomic-force (AFM) and electronic microscopies (SEM and TEM).-Fabrication processes with electronic lithography and different etching technics which allow us to fabricate photonic structures such as gratings coupler, strip or sub-wavelength waveguides on full oxide-and hybrid oxide/Si chips and their optical characterisation around 1550 nm.-Micro-Raman spectroscopy used to provide information about strain in silicon or YSZ structures throughout the processes [6]. Last results about full oxide-and hybrid oxide/Si-photonic structures will be presented and discussed.

Published
2017

9. Influence of electrical pulses on lithium cobalt oxide thin films : memristive behaviour and potential applications

Author

Nguyen, van Son, Mai, van Huy, Moradpour, Alec, Auban-Senzier, Pascale, Pasquier, Claude, Wang, Kang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Svoukis, Efthymios, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, March, Katia, Brun, Nathalie, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), CEA/LITEN/DTNM/LT, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2016

10. Caractérisations de cellules de mémoires résistives par AFM à pointe conductrice

Author

Nguyen, van Son, Mai, van Huy, Moradpour, Alec, Auban-Senzier, Pascale, Pasquier, Claude, Wang, Kang, Albouy, Pierre-Antoine, Rozenberg, Marcelo, Giapintzakis, John, Mihailescu, C. N., C.M., Orfanidou, Svoukis, Efthymios, Maroutian, Thomas, Lecoeur, Philippe, Agnus, Guillaume, Aubert, Pascal, Franger, Sylvain, Salot, Raphaël, March, Katia, Brun, Nathalie, Alamarguy, David, Chrétien, Pascal, Schneegans, Olivier, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), University of Cyprus [Nicosia], Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), CEA/LITEN/DTNM/LT, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), University of Cyprus [Nicosia] (UCY), and Université Paris-Sud - Paris 11 (UP11)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

National audience

Published
2016

11. Functional oxides on Silicon and Sapphire substrates for photonic applications

Author

Marcaud, Guillaume, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Damas, Pedro, Berciano, Mathias, Pillard, Valerie, Maroutian, Thomas, Agnus, Guillaume, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; The hybrid integration of oxides on silicon or sapphire is promising to bring other properties (such as multiferroicity or piezoelectricity) that can be combined and tuned at the nanoscale to develop new devices. Moreover, their epitaxial growth and difference of thermal expansion induce strain that can be used to break the symmetry and reveal second-order nonlinear effect in silicon. This work is mainly devoted to optimization of the growth of functional oxides such as YSZ (Yttria-Stabilized Zirconia) on sapphire and silicon, in order to control the crystalline quality, the control of strain distribution and the interfaces YSZ/Si. Epitaxial growth of YSZ thin films Preliminary optical and strain measurements on YSZ on silicon Conclusions Perspectives POPSTAR In the case of YSZ, the yttrium content can be used to tune the lattice mismatch with silicon and thus the epitaxial strain. The growth of YSZ on sapphire substrate allows measuring optical properties of this oxide without silicon interface effects. Functional oxides are deposited by epitaxial growth (pulsed-laser deposition) on silicon and so naturally induce strong strain due to large lattice parameter mismatch. Furthermore the difference of thermal expansion coefficients between YSZ and silicon is 5 times higher than Si 3 N 4 Si YSZ S i O 2 SEM image of silicon strip waveguide strained with epitaxial YSZ thin film Pulsed-laser deposition (PLD) Red parameters have been tested :  Sapphire : oxygen pressure [3] and surface state of the substrate are the most important parameters which lead to the growth of (002) or (111)YSZ on sapphire C-cut. Even if we have seen only (002)YSZ on sapphire R-cut, the quality is lower than on C-cut.  Silicon : oxygen pressure is the key parameter to grow epitaxially YSZ on silicon and to reduce the silica thickness at the interface. Map of Si raman peak [2] Wolf, " Micro-Raman Spectroscopy to Study Local Mechanical Stress in Silicon Integrated Circuits. " Semicond. Sci. Technol. 1996 • Shift of Si Raman peak : Waveguide strained by YSZ about 500 MPa [2]. • Weak transmission of 30 dB/cm. Need to improve the quality of the growth and control YSZ/Si interface. Transmission measurement at 1,55 µm Sapphire structure • Efficiently control and understand the chemical and thermal treatment of the substrates • Fabricate optical structures of YSZ on sapphire including waveguides • Optimize the growth quality of YSZ on silicon to avoid formation of silica at interface and increase the strain generation • Study the strain on different structures of silicon with different process of YSZ growth in PLD • YSZ-strained Si waveguides :-From First measurements, transmission in YSZ-strained Si waveguides is quite low, showing that the quality of the waveguides has to be further improved.-Si waveguides have been elaborated and strained thanks to the difference of thermal expansion of YSZ thin films and silicon substrate (strain evidenced by Raman measurements). • Epitaxial growth on sapphire :-The growth of YSZ thin films on sapphire has been optimized by studying the effects of all the PLD parameters.-Oxygen pressure and state surface of the substrate are the key to control YSZ growth orientation and films quality.-Optimized films surface exhibits a very low roughness (below 1nm) with atomic steps (related to the ones of the substrate).-Films grown on C-cut substrates have significantly better crystalline quality than on R-cut substrates. Only one orientation of YSZ film (002) can be stabilized with substrate treatment.-2-1

Published
2016

12. Oxides on Silicon and Sapphire substrates for photonic applications

Author

Marcaud, Guillaume, Matzen, Sylvia, Alonso-Ramos, Carlos, Le Roux, Xavier, Damas, Pedro, Pillard, Valerie, Maroutian, Thomas, Agnus, Guillaume, Cassan, Eric, Marris-Morini, Delphine, Lecoeur, Philippe, Vivien, Laurent, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and European Project: 647342,H2020,ERC-2014-CoG,POPSTAR(2015)

Subjects
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience; Intensive researches are currently focused on the miniaturization of devices and on the combination of photonics and electronics in the same platform, in order to decrease the power consumption and to create novel functionalities. In this context, the hybrid integration of oxides on silicon is promising to bring other properties (such as multiferroicity or piezoelectricity) that can be combined and tuned at the nanoscale to develop new devices. However, such integration induces scientific and technological challenges to overcome. The aim of the project is to develop innovative silicon photonic devices by integrating complex epitaxial oxide thin films on silicon and to optimize their physical properties. This work is mainly focused on the optimization of the materials including the crystalline quality, the control of strain fields and the interfaces between oxide and silicon. The experimental study includes the growth of oxide layers on silicon and sapphire substrates by pulsed laser deposition and their characterization by several complementary techniques, such as X ray diffraction, AFM-SEM microscopies, and Raman spectroscopy. Furthermore, the first fabrication and characterization of optical waveguides will be presented and discussed.

Published
2016

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