1. A setup for arc-free reactive DC sputter deposition of Al-O-N
- Author
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Kerstin Thorwarth, Jörg Patscheider, Mathis Trant, Hans J. Hug, and Maria Fischer
- Subjects
010302 applied physics ,Range (particle radiation) ,Direct current magnetron sputtering ,Materials science ,Oxide ,02 engineering and technology ,Surfaces and Interfaces ,General Chemistry ,Sputter deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Surfaces, Coatings and Films ,Arc (geometry) ,chemistry.chemical_compound ,Chemical engineering ,chemistry ,0103 physical sciences ,Materials Chemistry ,Deposition (phase transition) ,Reactivity (chemistry) ,Thin film ,0210 nano-technology - Abstract
Aluminum oxynitride (Al-O-N) is a material suitable for hard, transparent thin films. Its physical properties and structure can be adjusted through the O-to-N ratio. Reactive Direct Current Magnetron Sputtering (R-DCMS) is a practical, widespread technique for the deposition of coatings. However, it proves to be challenging in the case of Al-O-N. The reason for this is the high reactivity of O2. Poisoning of Al targets by O2 causes formation of insulating oxide islands and consequently leads to target destruction and a failure of the deposition process. Here, we show that with two separate gas inlets for the two reactive gases, a good process stability can be achieved over the entire range of O-to-N ratios.
- Published
- 2019
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