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Recent development of aintegrated micro-scale hybrid PV/CPV approach is presented. The Wafer Integrated Micro-scale PV approach (WPV) seamlessly integrates multijunction micro-cells with a multi-functional silicon platform that provides optical micro-concentration, hybrid photovoltaic, and mechanical micro-assembly. The development of the firstgeneration prototype module based on the WPV concept is described. Initial outdoor module characterization results will also be discussed. The WPV approach is experimentally shown to achieve over 100% improvement on the concentration-acceptance-angle product (CAP), using the wafer-embedded non-imaging micro-concentrating elements. The wafer-embedded-features lead to significantly reduced module material and fabrication costs, sufficient angular tolerance for low-cost trackers, and an ultra-compact optical architecture compatible with commercial flat panel infrastructures. The performance of the PV/CPV hybrid architecture is projected to illustrate its potential for cost-effective collection of both direct and diffuse sunlight, thereby extending the geographic and market domains for cost-effective PV system deployment. Our outdoor testing results on diffuse light collector in Cambridge, MA, USA indicate strong forward scattering effect of the diffuse light, which consequently can be utilized to design efficient diffuse concentrators to further reduce the cost of the Si cell. Leveraging low-cost micro-fabrication and high-level integration techniques, the micro-scale PV/CPV hybrid approach effectively combines the high performance of multijunction solar cells and the low costs of flat-plate Si PV systems.

© 1995-2012 IEEE. The design, fabrication, and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The bonded cells showed no evidence of degradation in spite of the integration process that involved significant processing including the removal of the III-V substrate.