Search

Perovskite/silicon tandem solar cells are emerging as a high-efficiency and prospectively cost-effective solar technology with great promise for deployment at the utility scale. However, despite the remarkable performance progress reported lately, assuring sufficient device stability-particularly of the perovskite top cell-remains a challenge on the path to practical impact. In this work, we analyze the outdoor performance of encapsulated bifacial perovskite/silicon tandems, by carrying out field-testing in Saudi Arabia. Over a six month experiment, we find that the open circuit voltage retains its initial value, whereas the fill factor degrades, which is found to have two causes. A first degradation mechanism is linked with ion migration in the perovskite and is largely reversible overnight, though it does induce hysteretic behavior over time. A second, irreversible, mechanism is caused by corrosion of the silver metal top contact with the formation of silver iodide. These findings provide directions for the design of new and more stable perovskite/silicon tandems

Summary Stable and efficient perovskite/silicon tandem solar cells require defect passivation and suppression of light-induced phase segregation of the wide-band-gap perovskite. Here, we report how molecules containing both electron-rich and electron-poor moieties, such as phenformin hydrochloride (PhenHCl), can satisfy both requirements, independent of the perovskite’s surface chemical composition and its grain boundaries and interfaces. PhenHCl-passivated wide-band-gap (∼1.68 eV) perovskite p-i-n single-junction solar cells deliver an open-circuit voltage (VOC) ∼100 mV higher than control devices, resulting in power conversion efficiencies (PCEs) up to 20.5%. These devices do not show any VOC losses after more than 3,000 h of thermal stress at 85°C in a nitrogen ambient. Moreover, PhenHCl passivation improves the PCE of textured perovskite/silicon tandem solar cells from 25.4% to 27.4%. Our findings provide critical insights for improved passivation of metal halide perovskite surfaces and the fabrication of highly efficient and stable perovskite-based single-junction and tandem solar cells.

Perovskite/silicon tandem solar cells promise power conversion efficiencies beyond the Shockley–Queisser limit of single-junction devices; however, their actual outdoor performance is yet to be investigated. Here we fabricate 25% efficient two-terminal monolithic perovskite/silicon tandem solar cells and test them outdoors in a hot and sunny climate. We find that the temperature dependence of both the silicon and perovskite bandgaps—which follow opposing trends—shifts the devices away from current matching for two-terminal tandems that are optimized at standard test conditions. Consequently, we argue that the optimal perovskite bandgap energy at standard test conditions is

In this work, we report perovskite solar cells in the planar p–i–n configuration based on single-step, anti-solvent-free, low-temperature (70 °C) slot-die-coated methylammonium lead tri-iodide (MAP...

Metal halide perovskites have emerged in recent years as promising photovoltaic materials due to their excellent optical and electrical properties, enabling perovskite solar cells (PSCs) with certified power conversion efficiencies (PCEs) greater than 25%. Provided radiative recombination is the dominant recombination mechanism, photon recycling – the process of reabsorption (and re-emission) of photons that result from radiative recombination – can be utilized to further enhance the PCE toward the Shockley–Queisser (S-Q) theoretical limit. Geometrical optics can be exploited for the intentional trapping of such re-emitted photons within the device, to enhance the PCE. However, this scheme reaches its fundamental diffraction limits at the submicron scale. Therefore, introducing photonic nanostructures offer attractive solutions to manipulate and trap light at the nanoscale via light coupling into guided modes, as well as localized surface plasmon and surface plasmon polariton modes. This review focuses on light-trapping schemes for efficient photon recycling in PSCs. First, we summarize the working principles of photon recycling, which is followed by a review of essential requirements to make this process efficient. We then survey photon recycling in state-of-the-art PSCs and propose design strategies to invoke light-trapping to effectively exploit photon recycling in PSCs. Finally, we formulate a future outlook and discuss new research directions in the context of photon recycling.

Summary Mixed lead halide perovskite solar cells have been demonstrated to benefit tremendously from the addition of Cs+ and Rb+, but its root cause is yet to be understood. This hinders further improvement, and processing approaches remain largely empirical. We address the challenge by tracking the solidification of precursors in situ and linking the evolutions of different crystalline phases to the presence of Cs+ and Rb+. In their absence, the perovskite film is inherently unstable, segregating into MA-I- and FA-Br-rich phases. Adding either Cs+ or Rb+ is shown to alter the solidification process of the perovskite films. The optimal addition of both Cs+ and Rb+ drastically suppress phase segregation and promotes the spontaneous formation of the desired α phase. We propose that the synergistic effect is due to the collective benefits of Cs+ and Rb+ on the formation kinetics of the α phase and on the halide distribution throughout the film.

Summary High-performance passivating contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. In this work, an electron-conductive, hole-blocking contact based on titanium nitride (TiN) deposited by reactive magnetron sputtering is presented. Quasi-metallic TiN combined with an ultrathin SiO2 passivation layer (SiO2/TiN) is demonstrated to be an effective electron-selective contact on c-Si, featuring a low-contact resistivity of 16.4 mΩ.cm2 and a tolerable recombination current parameter of ∼500 fA/cm2. By implementing the dual-function SiO2/TiN contact, which acts simultaneously as a surface passivating layer and metal electrode, an efficiency of 20% is achieved by an n-type c-Si solar cell with a simple structure. This work not only demonstrates a way to develop efficient n-type c-Si solar cells with dual-function metal nitride contacts at a low cost but also expands the pool of available carrier transport materials, from metal oxides to metal nitrides, for photovoltaic devices.

Bifacial monolithic perovskite/silicon tandem solar cells exploit albedo—the diffuse reflected light from the environment—to increase their performance above that of monofacial perovskite/silicon tandems. Here we report bifacial tandems with certified power conversion efficiencies >25% under monofacial AM1.5G 1 sun illumination that reach power-generation densities as high as ~26 mW cm–2 under outdoor testing. We investigated the perovskite bandgap required to attain optimized current matching under a variety of realistic illumination and albedo conditions. We then compared the properties of these bifacial tandems exposed to different albedos and provide energy yield calculations for two locations with different environmental conditions. Finally, we present a comparison of outdoor test fields of monofacial and bifacial perovskite/silicon tandems to demonstrate the added value of tandem bifaciality for locations with albedos of practical relevance. Bifacial solar cells can outperform monofacial cells by exploiting sunlight reflected off the ground surface. De Bastiani et al. show that bifacial perovskite/silicon tandem with an optimized bandgap can deliver a power density of 26 mW cm–2 and compare its performance to monofacial cells under outdoor conditions.

Translating the high power conversion efficiencies of single-junction perovskite solar cells in their classic, non-inverted (n-i-p) architecture to efficient monolithic n-i-p perovskite/silicon tandem solar cells with high current densities has been a persistent challenge due to the lack of low-temperature processable, chemically-insoluble contact materials with appropriate polarity and sufficient optical transparency. To address this, we developed sputtered amorphous niobium oxide (a-NbOx) with ligand-bridged C-60 as an efficient electron-selective contact, deposited on the textured-silicon bottom cell. For the sunward, hole-selective contact we implemented a stack of molecularly doped broadband transparent evaporated 2,2 ',7,7 '-tetra(N,N-di-p-tolyl)amino-9,9-spirobifluorene (spiro-TTB) and atomic layer deposited vanadium oxide, which further enhances the device quantum efficiency. Combining these contact materials with two-dimensional perovskite passivation on the micrometer-thick solution-processed perovskite top cell yields 27% efficient monolithic n-i-p perovskite/silicon tandem solar cells, which represents one of the highest power conversion efficiencies reported on pyramidal textured crystalline silicon bottom cells, and the highest with this polarity. The authors would like to thanks to Nini Wei for the TEM images; funding: the research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) under award no. OSR-CARF/CCF-3079 and award no. IED OSR-2019-4208.

A coupled mechanical and electrical characterization method to monitor the correlation of organic photovoltaic (OPV) electrode resistance and cell performance upon tensile strain and to verify the cause of deterioration and the effect of OPV performance under tensile stress has been developed. Both a commercial OPV module and ethylene tetrafluoroethylene (ETFE) membrane-printed OPV electrode layers have been tested by applying the method. The encapsulation layer strength has been found to be the mechanical bottleneck of the tested commercial OPV module. The decrease in the transparent electrode conductance has been found to be responsible for cell degradation upon tensile strain, with the threshold tensile strain at approximately 2%. A test results comparison between ETFE- and polyethylene terephthalate (PET)-printed OPV layers demonstrated that ETFE-printed electrodes are less brittle and sensitive to tensile strain owing to the network pattern response of ETFE-printed electrodes. In addition, the adoption of Ag/poly(3,4-ethylenedioxythiophene) (PEDOT) layering can improve the tensile strain threshold to almost double to maintaining 80% of the initial normalized layer conductance through the advantage of its “bridging effect”. Collectively, our results provide valuable information and illustrate a promising future for architectural membrane printed OPV.

Cesium lead halide perovskite materials have attracted considerable attention for potential applications in lasers, light-emitting diodes, and photodetectors. Here, we provide the experimental and theoretical evidence for photon recycling in CsPbBr3 perovskite microwires. Using two-photon excitation, we recorded photoluminescence (PL) lifetimes and emission spectra as a function of the lateral distance between PL excitation and collection positions along the microwire, with separations exceeding 100 μm. At longer separations, the PL spectrum develops a red-shifted emission peak accompanied by an appearance of well-resolved rise times in the PL kinetics. We developed quantitative modeling that accounts for bimolecular recombination and photon recycling within the microwire waveguide and is sufficient to account for the observed decay modifications. It relies on a high radiative efficiency in CsPbBr3 perovskite microwires and provides crucial information about the potential impact of photon recycling and wa...

Although halide perovskite nanocrystals (NCs) are promising materials for optoelectronic devices, they suffer severely from chemical and phase instabilities. Moreover, the common capping ligands like oleic acid and oleylamine that encapsulate the NCs will form an insulating layer, precluding their utility in optoelectronic devices. To overcome these limitations, we develop a postsynthesis passivation process for CsPbI3 NCs by using a bidentate ligand, namely 2,2′-iminodibenzoic acid. Our passivated NCs exhibit narrow red photoluminescence with exceptional quantum yield (close to unity) and substantially improved stability. The passivated NCs enabled us to realize red light-emitting diodes (LEDs) with 5.02% external quantum efficiency and 748 cd/m2 luminance, surpassing by far LEDs made from the nonpassivated NCs.

CsPb2Br5 is a ternary halogen-plumbate material with close characteristics to the well-reported halide perovskites. Owing to its unconventional two-dimensional structure, CsPb2Br5 is being looked at broadly for potential applications in optoelectronics. CsPb2Br5 investigations are currently limited to nanostructures and powder forms of the material, which present unclear and conflicting optical properties. In this study, we present the synthesis and characterization of CsPb2Br5 bulk single crystals, which enabled us to finally clarify the material's optical features. Our CsPb2Br5 crystal has a two-dimensional structure with Pb2Br5− layers spaced by Cs+ cations, and exhibits approximately 3.1 eV indirect band gap with no emission in the visible spectrum.

Zero-dimensional perovskite-related structures (0D-PRS) are a new frontier of perovskite-based materials. 0D-PRS, commonly synthesized in powder form, manifest distinctive optical properties such as strong photoluminescence (PL), narrow emission line width, and high exciton binding energy. These properties make 0D-PRS compelling for several types of optoelectronic applications, including phosphor screens and electroluminescent devices. However, it would not be possible to rationally design the chemistry and structure of these materials, without revealing the origins of their optical behavior, which is contradictory to the well-studied APbX3 perovskites. In this work, we synthesize single crystals of Cs4PbBr6 0D-PRS, and investigated the origins of their unique optical and electronic properties. The crystals exhibit a PL quantum yield higher than 40%, the highest reported for perovskite-based single crystals. Time-resolved and temperature dependent PL studies, supported by DFT calculations, and structural ...

The authors acknowledge the financial support of King Abdullah University of Science and Technology (KAUST).

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm2 V−1 s−1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □−1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In2O3) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm−2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.

We present an electron-conductive, hole-blocking contact for silicon solar cell in this work. Quasi-metallic titanium nitride (TiN), deposited by reactive magnetron sputtering, is proven to be an effective electron-selective contact for silicon solar cell, simultaneously achieving a low contact resistivity (ρ c ) of ~ 16 mΩ∙cm2 and a tolerable contact recombination parameter (J 0c ) of ~ 500 fA/cm2. By the implementation of the dual-function SiO 2 /TiN contact, which acts simultaneously as efficient surface passivating and metal electrode, a power conversion efficiency of 20% is achieved on an n-type silicon solar cell with a simple structure. This work demonstrates a way to develop efficient n-type Si solar cells with dual-function metal nitride contacts at a low cost.

Metal-halide perovskites are rapidly emerging as an important class of photovoltaic absorbers that may enable high-performance solar cells at affordable cost. Thanks to the appealing optoelectronic properties of these materials, tremendous progress has been reported in the last few years in terms of power conversion efficiencies (PCE) of perovskite solar cells (PSCs), now with record values in excess of 24%. Nevertheless, the crystalline lattice of perovskites often includes defects, such as interstitials, vacancies, and impurities; at the grain boundaries and surfaces, dangling bonds can also be present, which all contribute to nonradiative recombination of photo-carriers. On device level, such recombination undesirably inflates the open-circuit voltage deficit, acting thus as a significant roadblock toward the theoretical efficiency limit of 30%. Herein, the focus is on the origin of the various voltage-limiting mechanisms in PSCs, and possible mitigation strategies are discussed. Contact passivation schemes and the effect of such methods on the reduction of hysteresis are described. Furthermore, several strategies that demonstrate how passivating contacts can increase the stability of PSCs are elucidated. Finally, the remaining key challenges in contact design are prioritized and an outlook on how passivating contacts will contribute to further the progress toward market readiness of high-efficiency PSCs is presented.

J.T. would like to thank Dr. Xin Song for valuable discussions surround organic photovoltaic device fabrication. This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award numbers “KAUST OSR-CARF URF/1/3079-33-01,” “OSR-2018-CARF/CCF-3079,” and “OSR-2018-KAUST-KAU Initiative-3902.”

Perovskite solar cells (PSCs) have become a promising photovoltaic (PV) technology, where the evolution of the electron-selective layers (ESLs), an integral part of any PV device, has played a distinctive role to their progress. To date, the mesoporous titanium dioxide (TiO2 )/compact TiO2 stack has been among the most used ESLs in state-of-the-art PSCs. However, this material requires high-temperature sintering and may induce hysteresis under operational conditions, raising concerns about its use toward commercialization. Recently, tin oxide (SnO2 ) has emerged as an attractive alternative ESL, thanks to its wide bandgap, high optical transmission, high carrier mobility, suitable band alignment with perovskites, and decent chemical stability. Additionally, its low-temperature processability enables compatibility with temperature-sensitive substrates, and thus flexible devices and tandem solar cells. Here, the notable developments of SnO2 as a perovskite-relevant ESL are reviewed with emphasis placed on the various fabrication methods and interfacial passivation routes toward champion solar cells with high stability. Further, a techno-economic analysis of SnO2 materials for large-scale deployment, together with a processing-toxicology assessment, is presented. Finally, a perspective on how SnO2 materials can be instrumental in successful large-scale module and perovskite-based tandem solar cell manufacturing is provided.

Despite impressive power conversion efficiencies (PCEs) reported for lab-scale perovskite solar cells (PSCs), obtaining large-area devices with similar performance remains challenging. Fundamentally, this can largely be attributed to a polarity mismatch between the perovskite-precursor solution and the underlying hydrophobic contact materials, resulting in perovskite films of insufficient quality for scaled devices. Specifically, for p-i-n devices, the commonly used DMF/DMSO co-solvent has a significant polarity mismatch with its underlying hole-transporting layer, PTAA. Here, the role of MAPbI3•solvent adduct interaction with the PTAA surface towards the formation of micro- and nano-scale pinholes is elucidated in detail. Replacing DMSO with NMP in the co-solvent system changes the binding energy profoundly, enabling uniform and dense films over large areas. The PCE of DMF/NMP ink-based devices drops slightly with increasing active device area, from 21.5% (0.1 cm2) to 19.8% (6.8 cm2), in comparison with conventional DMF/DMSO ink. This work opens a pathway towards the scalability of solution-processed perovskite optoelectronic devices.

J.K. and W.L. contributed equally to this work. This work was supported by funding from King Abdullah University of Science and Technology (KAUST) Oce of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383.

Researchers provide new insights into the formation of small polarons in zero-dimensional perovskites., Low-dimensional perovskites offer a rare opportunity to investigate lattice dynamics and charge carrier behavior in bulk quantum-confined solids, in addition to them being the leading materials in optoelectronic applications. In particular, zero-dimensional (0D) inorganic perovskites of the Cs4PbX6 (X = Cl, Br, or I) kind have crystal structures with isolated lead halide octahedra [PbX6]4− surrounded by Cs+ cations, allowing the 0D crystals to exhibit the intrinsic properties of an individual octahedron. Using both experimental and theoretical approaches, we studied the electronic and optical properties of the prototypical 0D perovskite Cs4PbBr6. Our results underline that this 0D perovskite behaves akin to a molecule, demonstrating low electrical conductivity and mobility as well as large polaron binding energy. Density functional theory calculations and transient absorption measurements of Cs4PbBr6 perovskite films reveal the polaron band absorption and strong polaron localization features of the material. A short polaron lifetime of ~2 ps is observed in femtosecond transient absorption experiments, which can be attributed to the fast lattice relaxation of the octahedra and the weak interactions among them.

Hybrid organic/inorganic perovskite nanoparticles (NPs) have garnered remarkable research attention because of their promising photophysical properties. New and interesting properties emerge after combining perovskite NPs with semiconducting materials. Here, we report the synthesis and investigation of a composite material obtained by mixing CH3NH3PbBr3 nanocrystals with the semiconducting polymer poly(3-hexylthiophene) (P3HT). By the combination of structural techniques and optical and magnetic spectroscopies we observed multiple effects of the perovskite NPs on the P3HT: (i) an enlargement of P3HT crystalline domains, (ii) a strong p-doping of the P3HT, and (iii) an enhancement of interchain order typical of H-aggregates. These observations open a new avenue toward innovative perovskite NP-based applications.

The exciting intrinsic properties discovered in single crystals of metal halide perovskites still await their translation into optoelectronic devices. The poor understanding and control of the crystallization process of these materials are current bottlenecks retarding the shift towards single crystal-based optoelectronics. Here we theoretically and experimentally elucidate the role of surface tension in the rapid synthesis of perovskite single crystals by inverse temperature crystallization (ITC). Understanding the nucleation and growth mechanisms enabled us to exploit surface tension to direct the growth of monocrystalline films of perovskites (AMX3, where A = CH3NH3+ or MA; M = Pb2+, Sn2+; X = Br-, I-) on the solution surface. We achieve up to 1 cm2-sized monocrystalline films with thickness on the order of the charge carrier diffusion length (~5-10 µm). Our work paves the way to control the crystallization process of perovskites, including thin film deposition, which is essential to advance the performance benchmarks of perovskite optoelectronics.

Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of the two-dimensional perovskites (C6H5C2H4NH3)2PbI4·(CH3NH3PbI3)n−1 (n = 1, 2, and 3), over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites, by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4·(CH3NH3PbI3)n−1 photoconductors due to the reduced electronic noise, whi...

The research reported in this publication was supported by funding fromthe King Abdullah University of Science and Technology (KAUST). For com-puter time, this research used the resources of the SupercomputingLaboratory at KAUST

Perovskite solar cells increasingly feature mixed-halide mixed-cation compounds (FA1-x-y MAx Csy PbI3-z Brz ) as photovoltaic absorbers, as they enable easier processing and improved stability. Here, the underlying reasons for ease of processing are revealed. It is found that halide and cation engineering leads to a systematic widening of the anti-solvent processing window for the fabrication of high-quality films and efficient solar cells. This window widens from seconds, in the case of single cation/halide systems (e.g., MAPbI3 , FAPbI3 , and FAPbBr3 ), to several minutes for mixed systems. In situ X-ray diffraction studies reveal that the processing window is closely related to the crystallization of the disordered sol-gel and to the number of crystalline byproducts; the processing window therefore depends directly on the precise cation/halide composition. Moreover, anti-solvent dripping is shown to promote the desired perovskite phase with careful formulation. The processing window of perovskite solar cells, as defined by the latest time the anti-solvent drip yields efficient solar cells, broadened with the increasing complexity of cation/halide content. This behavior is ascribed to kinetic stabilization of sol-gel state through cation/halide engineering. This provides guidelines for designing new formulations, aimed at formation of the perovskite phase, ultimately resulting in high-efficiency perovskite solar cells produced with ease and with high reproducibility.

Charge accumulation at the electron and hole transport layers generates anomalous electrical behavior in perovskite solar cells (PSCs). Hysteresis in the current-voltage characteristic and recombination at the interfaces are the clearest manifestations of this phenomenon, which compromises device performance and stability. Here, the underlying charge‐carrier dynamics of a variety of PSCs are investigated by analyzing their transient photocurrent response. Towards shorter time scales, PSCs often show increasingly severe hysteretic responses. This phenomenon is correlated with the presence of interfacial accumulated charges that hinders the photogenerated carrier extraction process. However, introducing passivating contacts improves the carrier‐injection properties and the devices become completely hysteresis free. These results underline the importance of contact passivation for PSCs and the need to further develop new passivating interlayers that simultaneously eliminate charge‐carrier recombination and provide selective transport for each carrier type at the PSC's contacts.

Organic–inorganic metal halide perovskites have demonstrated high power conversion efficiencies in solar cells and promising performance in a wide range of optoelectronic devices. The existence and stability of bound electron–hole pairs in these materials and their role in the operation of devices with different architectures remains a controversial issue. Here we demonstrate, through a combination of optical spectroscopy and multiscale modelling as a function of the degree of polycrystallinity and temperature, that the electron–hole interaction is sensitive to the microstructure of the material. The long-range order is disrupted by polycrystalline disorder and the variations in electrostatic potential found for smaller crystals suppress exciton formation, while larger crystals of the same composition demonstrate an unambiguous excitonic state. We conclude that fabrication procedures and morphology strongly influence perovskite behaviour, with both free carrier and excitonic regimes possible, with strong implications for optoelectronic devices.