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A novel semiconductor 1D nanomaterial, Nb2Se9, was synthesized on a bulk scale via simple vapor transport reaction between niobium and selenium. Needle-like single crystal Nb2Se9 contains numerous single Nb2Se9 chains linked by van der Waals interactions, and we confirmed that a bundle of chains can be easily separated by mechanical cleavage. The exfoliated Nb2Se9 flakes exhibit a quasi-two-dimensional layered structure, and the number of layers can be controlled using the repeated-peeling method. The work function varied depending on the thickness of the Nb2Se9 flakes as determined by scanning Kelvin probe microscopy. Moreover, we first implemented a field effect transistor (FET) based on nanoscale Nb2Se9 flakes and verified that it has p-type semiconductor characteristics. This novel 1D material can form a new family of 2D materials and is expected to play important roles in future nano-electronic devices.

After the successful synthesis of graphene using chemical vapor deposition in 2009, the large-area/defect-free transfer method still remains a critical issue for implementing high-performance graphene-based electronic devices. Here, for the first time, we demonstrated a specially prepared water-soluble amorphous WO3 intermediate layer to effectively protect the graphene surface from immediately after its synthesis to transfer and final unit processing. Moreover, using the photodetector to which the proposed protection method was applied, the performance improvement was quantitatively verified. Compared with the control device, the surface-protected photodetector recorded a higher photoresponsivity of 1.74 times and faster temporal photoswitching response time of 4 s or more. The graphene surface protection method using the WO3 intermediate layer allows the reversibility in transfer process and performance enhancement of graphene-based electronic devices.

In this study, we successfully demonstrate the growth of an in-plane graphene/h-BN (GBN) heterostructure on a single crystal Ge (1 1 0) substrate. A group IV semiconductor Ge is an appropriate catalyst for the epitaxial growth of both graphene and h-BN. Thus, by sequentially introducing ammonia borane (NH3-BH3) and methane using two-zone low-pressure chemical vapor deposition (LPCVD), we obtained an in-plane GBN heterostructure. Based on microscopic and spectroscopic analyses, we confirmed that the edge of the pre-synthesized h-BN domains provides plentiful nucleating sites for the lateral epitaxial growth of graphene. Furthermore, we systematically controlled the area and density of h-BN domains in GBN and observed a change in the electrical conductivity of GBN based on the ratio of conducting graphene and insulating h-BN. This result conforms to the percolation theory of two-dimensional materials (2DMs). We believe that our synthetic approach could be a practical method for large-scale synthesis and property control of in-plane heterostructures and can be applied to various types of 2D heterostructures—potentially useful in a wide range of electronic applications.

We report a simple label-free electrochemical method of detecting low concentrations of botulinum neurotoxin type E light chain (BoNT/E LC) based on its peptide cleavage activity. Dual-mode cyclic voltammetry was employed to observe changes in the redox signal of ferri-/ferro-cyanide on interdigitated microelectrodes, whose surfaces were covered by peptides designed from synaptosomal-associated protein 25 to be cleaved by BoNT/E LC. With the introduction of BoNT/E LC, the redox signal showed a time-dependent increase due to cleavage of the immobilized peptide molecules. In addition to the increased redox signal intensity, its time-dependence can be considered as a strong evidence of BoNT/E sensing, since the time-dependent increase can only result from the enzymatic activity of BoNT/E LC. Using this method, BoNT/E LC, at concentrations as low as 5 pg/ml, was readily measurable with only an hour of incubation.