1. Layer Hall effect in a 2D topological Axion antiferromagnet
- Author
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Bahadur Singh, Christian Tzschaschel, Austin J Akey, Xin-Yue Zhang, Hai-Zhou Lu, Ni Ni, Hung-Ju Tien, Brian B. Zhou, Damien Bérubé, Chaowei Hu, Zumeng Huang, Claudia Felser, Arun Bansil, Rui Chen, Tay-Rong Chang, Thomas Ding, Weibo Gao, Naizhou Wang, Zhaowei Zhang, Jules Gardener, Qiong Ma, Sheng-Chin Ho, David C. Bell, Su-Yang Xu, Anyuan Gao, Hai-Peng Sun, Amit Agarwal, Hsin Lin, Kenneth S. Burch, Yu-Fei Liu, Kenji Watanabe, Yu-Xuan Wang, Jian-Xiang Qiu, Takashi Taniguchi, Barun Ghosh, Liang Fu, and School of Physical and Mathematical Sciences
- Subjects
Physics ,Condensed Matter - Materials Science ,Multidisciplinary ,Field (physics) ,Condensed Matter - Mesoscale and Nanoscale Physics ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Topology ,01 natural sciences ,Electric charge ,Magnetic field ,Magnetization ,Geometric phase ,Electric Field ,Hall effect ,Physics [Science] ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,0103 physical sciences ,Berry connection and curvature ,010306 general physics ,0210 nano-technology ,Axion - Abstract
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs' unique properties: At large scale, due to the absence of global magnetization, AFMs may appear to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$\frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $\mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$\cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moir\'e potential., Comment: A revised version of this article is published in Nature
- Published
- 2021