1. Flexible In2O3 Nanowire Transistors on Paper Substrates
- Author
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Rongri Tan, Jing Li, and Huixuan Liu
- Subjects
Materials science ,Scanning electron microscope ,Nanotechnology ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,01 natural sciences ,Capacitance ,law.invention ,law ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Fast ion conductor ,Electronics ,Nanowire transistors ,nanowire transistors ,Electrical and Electronic Engineering ,Flexible paper electronics ,010302 applied physics ,business.industry ,Transistor ,Microporous material ,electric-double-layer ,021001 nanoscience & nanotechnology ,Electronic, Optical and Magnetic Materials ,Logic gate ,Optoelectronics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,0210 nano-technology ,business ,lcsh:TK1-9971 ,Biotechnology - Abstract
Flexible In2O3 nanowire transistors gated by microporous SiO2-based solid electrolytes are fabricated on paper substrates at room temperature. Low-voltage (1.0 V) operation of these devices is realized owing to the large electric-double-layer capacitance of (1.73 μF/cm2 at 20 Hz) of the microporous SiO2 solid electrolytes, which were deposited at room temperature. The subthreshold swing, current on/off ratio, and field-effect mobility of the paper-based nanowire transistors are estimated to be 74 mV/decade, 1.7×106, and 218.3 cm2/V·s, respectively. These low-voltage paper-based nanowire transistors show promise for use in portable flexible paper electronics and low-cost portable sensors.
- Published
- 2017
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