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The next generation of bolometric experiments searching for rave events, in particular for the neutrino-less double beta decay, needs fast, high-sensitivity and easy-to-scale cryogenic light detectors. The CALDER project (2014-2020) developed a new technology for light detection at cryogenic temperature. In this paper we describe the achievements and the final prototype of this project, consisting of a $5\times5$ cm$^2$, 650 $\mu$m thick silicon substrate coupled to a single kinetic inductance detector made of a three-layer aluminum-titanium-aluminum. The baseline energy resolution is 34$\pm$1(stat)$\pm$2(syst) eV RMS and the response time is 120 $\mu$s. These features, along with the natural multiplexing capability of kinetic inductance detectors, meet the requirements of future large-scale experiments., Comment: 7 pages, 7 figures

Owing to their ability to generate non-classical light states, quantum dots (QDs) are very promising candidates for the large-scale implementation of quantum information technologies. However, the high photon collection efficiency demanded by these technologies may be impossible to reach for “standalone” semiconductor QDs, embedded in a high-refractive index medium. In this work a novel laser writing technique is presented, enabling the direct fabrication of a QD self-aligned—with a precision of ±30 nm—to a dielectric microsphere. The presence of the microsphere leads to an enhancement of the QD luminescence collection by a factor 7.3 ± 0.7 when an objective with 0.7 numerical aperture is employed. This technique exploits the possibility of breaking the N−H bonds in GaAs (Formula presented.) Nx:H by a laser light, obtaining a lower-bandgap material, GaAs (Formula presented.) Nx. The microsphere, deposited on top of a GaAs (Formula presented.) Nx:H/GaAs quantum well, is used to generate a photonic nanojet, which removes hydrogen exactly below the microsphere, creating a GaAs (Formula presented.) Nx QD at a predefined distance from the sample surface. Second-order autocorrelation measurements confirm the ability of the QDs obtained with this technique to emit singlephotons.

Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the band gap and the creation of site controlled quantum dots through the manipulation of N−nH complexes, N−nH complexes, wherein a nitrogen atom is surrounded by n hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in the GaAs (110) surface at the atomic scale. In addition to that we performed density functional theory (DFT) calculations to determine the atomic properties of the N−nH complexes. We argue that at or near the (110) GaAs surface two H atoms from N−nH complexes dissociate as an H2 molecule. We observe multiple features related to the hydrogenation process, of which a subset is classified as N-1H complexes. These N-1H related features show an apparent reduction of the local density of states (LDOS), characteristic to N atoms in the GaAs (110) surface with an additional apparent localized enhancement of the LDOS located in one of three crystal directions. N−nH features can be manipulated with the STM tip. Showing in one case a switching behavior between two mirror-symmetric states and in another case a removal of the localized enhancement of the LDOS. The disappearance of the bright contrast is most likely a signature of the removal of an H atom from the N−nH complex.

This paper reports the effects of high strains on the optoelectronic properties of 2D crystals. By realizing micro- and nano-domes made of single layer transition-metal dichalcogenides, the authors demonstrate the possibility to induce a clear-cut crossover from direct to indirect bandgap in strained monolayers. The indirect excitons can be harvested and potentially stored for long times, which is relevant for flexible photovoltaics devices and for inducing bosonic condensation.

International audience; We describe the in-flight performance of the horn-coupled lumped element kinetic inductance detector arrays of the balloon-borne OLIMPO experiment. These arrays have been designed to match the spectral bands of OLIMPO: 150, 250, 350, and $460\,\hbox {GHz}$, and they have been operated at $0.3\,\hbox {K}$ and at an altitude of ${37.8}\,\hbox {km}$ during the stratospheric flight of the OLIMPO payload, in Summer 2018. During the first hours of flight, we tuned the detectors and verified their large dynamics under the radiative background variations due to elevation increase of the telescope and to the insertion of the plug-in room-temperature differential Fourier transform spectrometer into the optical chain. We have found that the detector noise equivalent powers are close to be photon noise limited and lower than those measured on the ground. Moreover, the data contamination due to primary cosmic rays hitting the arrays is less than 3% for all the pixels of all the arrays and less than 1% for most of the pixels. These results can be considered the first step of KID technology validation in a representative space environment.

International audience; BULLKID is an R&D project on a cryogenic particle detector to search for rare low-energy processes such as low-mass dark matter and neutrino coherent scattering off nuclei. The detector unit we are designing consists in an array of ~ 100 silicon absorbers sensed by phonon-mediated, microwave-multiplexed kinetic inductance detectors, with energy threshold below 100 eV and total target mass around 30 g. The single detector unit will be engineered to ensure a straightforward scalability to a future kg-scale experiment.

International audience; The CALDER project aims to realize cryogenic light detectors for the next generation of experiments searching for rare events. More in detail, the main application of these devices will be the background suppression in future cryogenic calorimetric experiments searching for neutrinoless double beta decay ($0\nu $DBD). This is the case of CUPID, a next-generation $0\nu $DBD observatory, able to take advantage from particle identification to dramatically reduce the background events. In this contribution, we show the status of the CALDER project. The light sensors developed in this R&D are based on kinetic inductance detector operated in the phonon-mediated approach. Their energy resolution (20 eV), time response ($\upmu $s) and multiplexing capability make them very promising for the future CUPID experiment.

Over the last few years, kinetic inductance detectors (KIDs) became the object of increasing interest as photon and phonon detectors. From this perspective, the pulse response of such detectors deserves an in-depth study. In most applications, the sensitivity of the KID is ultimately limited by the white noise from the cryogenic amplifier, which is reduced by increasing the power supplied to the device. On the other hand, a high readout power leads to a nonlinear response of the microresonator, originating from the dependence on the current acquired by the kinetic inductance. This paper describes a model for the response to optical pulses of a KID driven to the nonlinear regime, taking into account not only the electrical effects but also the thermal ones induced by power absorption. The model has been validated on data collected using an aluminium resonator developed within the CALDER project (http://www.roma1.infn.it/exp/calder/).

International audience; The development of large area cryogenic light detectors is one of the priorities of next generation bolometric experiments searching for neutrinoless double beta decay. The simultaneous read-out of the heat and light signals enables particle identification, provided that the energy resolution and the light collection are sufficiently high. CALDER (Cryogenic wide-Area Light Detectors with Excellent Resolution) is developing phonon-mediated silicon light detectors using KIDs, with the goal of sensing an area of 5 × 5 cm 2 with a resolution of 20 eV RMS. We present the latest results obtained with aluminum chips and with newly developed multi-layer titanium–aluminum chips featuring a remarkable sensitivity.

The variegated family of two-dimensional (2D) crystals has developed rapidly since the isolation of its forerunner: Graphene. Their plane-confined nature is typically associated with exceptional and peculiar electronic, optical, magnetic, and mechanical properties, heightening the interest of fundamental science and showing promise for applications. Methods for tuning their properties on demand have been pursued, among which the application of mechanical stresses, allowed by the incredible mechanical robustness and flexibility of these atomically thin materials. Great experimental and theoretical efforts have been focused on the development of straining protocols and on the evaluation of their impact on the peculiar properties of 2D crystals, revealing a novel, alluring physics. The relevance held by strain for 2D materials is introduced in Sec. I. Sections II and III present the multiplicity of methods developed to induce strain, highlighting the peculiarities, effectiveness, and drawbacks of each technique. Strain has largely widened the 2D material phase space in a quasi-seamless manner, leading to new and rich scenarios, which are discussed in Secs. IV-VI of this work. The effects of strain on the electronic, optical, vibrational, and mechanical properties of 2D crystals are discussed, as well as the possibility to exploit strain gradients for single-photon emission, non-linear optics, or valley/spintronics. Quantitative surveys of the relevant parameters governing these phenomena are provided. This review seeks to provide a comprehensive state-of-the-art overview of the straining methods and strain-induced effects, and to shed light on possible future paths. The aims and developments, the tools and strategies, and the achievements and challenges of this research field are widely presented and discussed.

We report on a novel lithographic approach for the fabrication of integrated quantum dot (QD)-photonic crystal (PhC) nanocavity systems. We exploit unique hydrogen's ability to tailor the band gap energy of dilute nitride semiconductors to fabricate isolated site-controlled QDs via a spatially selective hydrogenation at the nanometer-scale. A deterministic integration of the realized site-controlled QDs with PhC nanocavities is provided by the inherent realignment precision (~20nm) of the electron beam lithography system used for the fabrication of both QDs and PhC cavities. A detailed description of the fabrication steps leading to the realization of integrated QD-PhC cavity systems is provided, together with the experimental evidence of a weak coupling effect between the single-photon emitter and the PhC cavity. Display Omitted A fabrication strategy for quantum dot-photonic crystal integration is presented.Spatial controlled hydrogen diffusion in dilute nitrides is used.Weak coupling effect between single photon emitter and cavity are observed.

Kinetic Inductance Detectors made of High-TC superconductor YBCO are designed and fabricated, in view as possible application as high sensitivity, low cost and high-manageability terahertz camera for imaging.

Molybdenum based crystals such as Li$_2$MoO$_4$ and CaMoO$_4$ are emerging as leading candidates for next generation experiments searching for neutrino-less double beta decay with cryogenic calorimeters (CUPID, AMoRE). The exquisite energy resolution and high radio-purity of these crystals come at the cost of a potentially detrimental background source: the two neutrinos double beta decay of $^{100}$Mo. Indeed, the fast half-life of this decay mode, combined with the slow response of cryogenic calorimeters, would result in pile-up events in the energy region of interest for neutrino-less double beta decay, reducing the experimental sensitivity. This background can be suppressed using fast and high sensitivity cryogenic light detectors, provided that the scintillation time constant itself does not limit the time resolution. We developed a new detection technique exploiting the high sensitivity, the fast time response and the multiplexing capability of Kinetic Inductance Detectors. We applied the proposed technique to a $2\times2\times2$ cm$^3$ Li$_2$MoO$_4$ crystal, which was chosen as baseline option for CUPID. We measured simultaneously both the phonon and scintillation signals with KIDs. We derived the scintillation time constant of this compound at millikelvin temperatures obtaining $\tau_{scint} = 84.5\pm4.5\rm{(syst)}\pm1.0\rm{(stat)}$ $\mu$s, constant between 10 and 190 mK., Comment: 7 pages, 9 figures

Circularly dichroic metasurfaces are highly sought for a plethora of applications; while many alternative options are present in the literature, it is hard to select an approach that combines high circular dichroism (CD) with stable performances and easy reproducibility. In this work, we have designed and experimentally investigated a planar plasmonic metamaterial based on a comma-shaped geometry, which features such characteristics. We have focused the complexity of realization in the design process, which combines intrinsic chirality and high field localization, while fabrication was executed by using a standard single-step lift-off procedure. We have produced two classes of samples, closely related in shape but differing slightly in designing method and results, both reaching high levels of CD. Experiments on the first reveal the sensibility of the metasurface to geometrical variations due to fabrication non-idealities, as often happens in metamaterials based on surface plasmons and resonances; on the other hand, with the second, we demonstrate that it is possible to guarantee stable peak values on specific wavelength ranges, even when dealing with relevant fabrication tolerances. Moreover, numerical analyses suggest the possibility to reach values converging toward unity. The ease of implementation by using standard fabrication procedures and the robustness of the performance even with fabrication imprecisions make our proposed metamaterial eligible for adoption for further research in high-precision spectroscopy and implementation at industrial scale. (C) 2019 Optical Society of America

The GaAs-like longitudinal-optical (LO) phonon frequency in hydrogenated GaAsN (x = 0.01) layers - with different H doses and similar low-energy irradiation conditions - was investigated by micro-Raman measurements in different scattering geometries and compared with those of epitaxial GaAs and as-grown GaAsN reference samples. A relaxation of the GaAs selection rules was observed, to be explained mainly on the basis of the biaxial strain affecting the layers. The evolution of the LO phonon frequency with increasing hydrogen dose was found to heavily depend on light polarization, thus suggesting that a linear relation between strain and the frequency of the GaAs-like LO phonon mode should be applied with some caution. Moreover, photoreflectance measurements in fully passivated samples of identical N concentration show that the blueshift of the GaAs-like LO frequency, characteristic of the hydrogenated structures, is dose-dependent and strictly related to the strain induced by the specific type of the dominant N-H complexes. A comparison of photoreflectance results with the finite element method calculations confirms that this dependence on the H dose is due to the gradual replacement of the N-2H complexes responsible for the electronic passivation of N with N-3H complexes, which are well known to induce an additional and sizeable lattice expansion.

International audience; We report on the performance of lumped-elements Kinetic Inductance Detector (KID) arrays for mm and sub-mm wavelengths, operated at 0.3 K during the stratospheric flight of the OLIMPO payload, at an altitude of 37.8 km. We find that the detectors can be tuned in-flight, and their performance is robust against radiative background changes due to varying telescope elevation. We also find that the noise equivalent power of the detectors in flight is smaller by a factor of ~ 2, 8, 3.5, 4.5 at 150, 250, 350 and 460 GHz relative to the one measured in the laboratory, and is close to our calculated photon-noise-limited performance. The effect of primary cosmic rays crossing the detector is found to be consistent with the expected ionization energy loss with phonon-mediated energy transfer from the ionization sites to the resonators. In the OLIMPO detector arrays, at float, cosmic ray events affect less than 4% of the detector samplings for all the pixels of all the arrays, and less than 1% of the samplings for most of the pixels. These results are also representative of what one can expect from primary cosmic rays in a satellite mission with similar KIDs and instrument environment.

In this review, we report on the design, fabrication, and characterization of photonic crystal arrays, made of two and three coupled nanocavities. The properties of the cavity modes depend directly on the shape of the nanocavities and on their geometrical arrangement. A non-negligible role is also played by the possible disorder because of the fabrication processes. The experimental results on the spatial distribution of the cavity modes and their physical characteristics, like polarization and parity, are described and compared with the numerical simulations. Moreover, an innovative approach to deterministically couple the single emitters to the cavity modes is described. The possibility to image the mode spatial distribution, in single and coupled nanocavities, combined with the control of the emitter spatial position allows for a deterministic approach for the study of cavity quantum electrodynamics phenomena and for the development of new photonic-based applications., M.F. and A.P. acknowledge support by Sapienza Università di Roma under the “Ricerche Ateneo” Grants 2016 and 2017. F.B., M.F. and G.P. also acknowledge support and funding from the Italian Ministry for Education, University and Research within the Futuro in Ricerca (FIRB) program (project DeLIGHTeD, Prot. RBFR12RS1W). The work of F.B. was partially supported by Fondazione Ente Cassa di Risparmio di Firenze within the project PERBACCO (no. 2016.1084). A.P and M.F. have also received funding from the LazioInnova project “SINFONIA”, (Prot. n. 85-2017-15200)., We acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI)

The realization of ordered strain fields in 2D crystals is an intriguing perspective in many respects, including the instauration of novel transport regimes and enhanced device performances. However, the current straining techniques hardly allow to reach strains higher than ?3% and in most cases there is no control over the strain distribution. In this work, a method is demonstrated to subject micrometric regions of atomically thin molybdenum disulfide (MoS) to giant strains with the desired ordering. Selective hydrogen-irradiation of bulk flakes allows the creation of arrays of size/position-controlled monolayer domes containing pressurized hydrogen. However, the gas pressure is ruled by energy minimization, limiting the extent and geometry of the mechanical deformation of the 2D membrane. Here, a protocol is developed to create a mechanical constraint, that alters remarkably the morphology of the domes, otherwise subject to universal scaling laws, as demonstrated by atomic force microscopy. This enables the realization of unprecedented periodic configurations of large strain gradients--estimated by numerical simulations--with the highest strains being close to the rupture critical values (>10%). The creation of such high strains is confirmed by Raman experiments. The method proposed here represents an important step toward the strain engineering of 2D crystals.

Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a novel and versatile approach for the fabrication of site-controlled QDs is presented. Hydrogen incorporation in GaAsN results in the formation of N-2H and N-2H-H complexes, which neutralize all the effects of N on GaAs, including the N-induced large reduction of the bandgap energy. Starting from a fully hydrogenated GaAs/GaAsN:H/GaAs quantum well, the NH bonds located within the light spot generated by a scanning near-field optical microscope tip are broken, thus obtaining site-controlled GaAsN QDs surrounded by a barrier of GaAsN:H (laterally) and GaAs (above and below). By adjusting the laser power density and exposure time, the optical properties of the QDs can be finely controlled and optimized, tuning the quantum confinement energy over more than 100 meV and resulting in the observation of single-photon emission from both the exciton and biexciton recombinations. This novel fabrication technique reaches a position accuracy

We addressed the issue of atomic ordering in a series of In-rich In xGa 1 − xN epilayers grown on a GaN/AlN/sapphire(0001) epitaxial template by quantitatively measuring the Ga-cation coordination in the second atomic shell of Ga. We used Diffraction Anomalous Fine Structure Spectroscopy (DAFS) at the Ga K-edge to select the signal coming from the Ga atoms in the epilayer and eliminate any contribution from the buffer layer. DAFS measurements were also performed on hydrogenated epilayers in order to investigate the possible formation of Ga-H complexes. We find that deviation from cation random distribution in the form of Ga clustering is present in both untreated and hydrogenated samples and that in the latter ones the second atomic shell around Ga is modified, suggesting an additional perturbation of the cation sublattice related to hydrogen. However, comparing the present results with In K-edge x-ray absorption spectra previously reported, we conclude that the formation of Ga-H complexes vs. In-H ones is unlikely. Cation clustering has to be anyway taken into account as a possible channel playing in the determination of the optical bandgap of these technology-oriented semiconductors.We addressed the issue of atomic ordering in a series of In-rich In xGa 1 − xN epilayers grown on a GaN/AlN/sapphire(0001) epitaxial template by quantitatively measuring the Ga-cation coordination in the second atomic shell of Ga. We used Diffraction Anomalous Fine Structure Spectroscopy (DAFS) at the Ga K-edge to select the signal coming from the Ga atoms in the epilayer and eliminate any contribution from the buffer layer. DAFS measurements were also performed on hydrogenated epilayers in order to investigate the possible formation of Ga-H complexes. We find that deviation from cation random distribution in the form of Ga clustering is present in both untreated and hydrogenated samples and that in the latter ones the second atomic shell around Ga is modified, suggesting an additional perturbation of the cation sublattice related to hydrogen. However, comparing the present results with In K-edge x-ray absorption spectra previously reported, we conclude that the formation of Ga-H complexes vs. In-H...

We provide a brief survey of the most recent results obtained by performing spatially selective hydrogen irradiation of dilute nitride semiconductors. The striking effects of the formation of stable N-H complexes in these compounds - coupled to the ultrasharp diffusion profile of H therein - can be exploited to tailor the structural (lattice constant) and optoelectronic (energy gap, refractive index, electron effective mass) properties of the material in the growth plane, with a spatial resolution of a few nm. This can be applied to the fabrication of site-controlled quantum dots (QDs) and wires, but also to the realization of the optical elements required for the on-chip manipulation and routing of qubits in fully integrated photonic circuits. The fabricated QDs - which have shown the ability to emit single photons - can also be deterministically coupled with photonic crystal microcavities, proving their inherent suitability to act as integrated light sources in complex nanophotonic devices.

The effect of Bi incorporation on the conduction band structure of Ga(AsBi) alloys is revealed by a direct estimation of the electron effective mass via cyclotron resonance absorption spectroscopy at THz frequencies in pulsed magnetic fields up to 65 T. A strong enhancement in the electron effective mass with increasing Bi content is reported, with a value of mass $\ensuremath{\sim}40%$ higher than that in GaAs for $\ensuremath{\sim}1.7%$ of Bi. This experimental evidence unambiguously indicates a Bi-induced perturbation of the host conduction band states and calls for a deep revision of the theoretical models describing dilute bismides currently proposed in the literature, the majority of which neglect or exclude that the incorporation of a small percentage of Bi may affect the conduction band states of the host material.

We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination--coupled to the ultra-sharp diffusion profile of H in dilute nitrides--allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented

We investigated atomic ordering in In-rich In x Ga1−x N epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconductor alloys. This phenomenon can be exploited for application in optoelectronics. By coupling In K-edge x-ray absorption spectroscopy and high resolution x-ray diffraction, we were able to discard the hypothesis of significant phase separation into InN + GaN, in agreement with previous N K-edge absorption spectroscopy. However, we found an enrichment of In neighbours in the second atomic shell of In as compared to random statistics (clustering) for x = 0.82, while this is not the case for x = 0.46. This result, which is also supported by optical spectroscopy, is likely to stimulate new theoretical studies on In x Ga1−x N alloys with a very high In concentration.

The properties of InGaAsN V-groove QWRs are assessed here by polarization-dependent photoluminescence (PL) and micro-magneto-PL. Both the polarization anisotropy of the QWR emission and the strong dependence of the diamagnetic shift on the orientation of the applied magnetic field confirm the 1D nature of the QWR excitons. Further, the possibility of passivating N impurities by H irradiation is used to estimate the N content (x) in the QWRs by turning off the effects of N incorporation. Both the H-induced blueshift of the QWR emission (70 meV) and the measured value of the electron effective mass are consistent with x similar to 1%. Nitrogen is also found to enhance the In intake in the QWR, likely due to the strain reduction resulting from the smaller lattice parameter of the InGaAsN alloy. Such strain reduction is also responsible for the quick decay of the degree of linear polarization (rho) of the QWR emission with increasing temperature, indicating a small splitting between the QWR valence-band levels. In fully hydrogenated samples, conversely, rho remains roughly constant up to similar to 240 K, suggesting the recovery of a larger energy separation between the QWR hole states upon N passivation. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

The properties of single site-controlled InGaAsN quantum wires (QWRs)-both untreated and irradiated with atomic hydrogen-are probed by micro-magnetophotoluminescence spectroscopy. The strong anisotropy of the diamagnetic shift measured for different orientations of the applied magnetic field confirms the one-dimensional nature of the QWR carrier wave function. In addition, the strain reduction associated with N incorporation is found to promote a larger indium intake in the QWR, enabling the realization of site-controlled QWRs emitting at long (>= 1.3 mu m), technologically relevant wavelengths.

Far-infrared absorption measurements have been performed in nominally undoped ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{Bi}}_{x}$ (0.6% \ensuremath{\leqslant} $x$ \ensuremath{\leqslant} 10.6%) for magnetic field up to 30 T. For 0.6% \ensuremath{\leqslant} $x$ \ensuremath{\leqslant} 4.5%, the Lyman series of an acceptor has been observed. An exceedingly high value of the ground-state $g$ factor provides strong evidence of Bi-related acceptor states. For $x$ \ensuremath{\geqslant} 5.6%, however, these acceptors suddenly disappear. Such anomalous dependence on Bi concentration parallels those recently reported in ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{Bi}}_{x}$ for other electronic and structural properties.