1. Investigation of Contaminants in Single Wafer Wet Cleaning Using Isopropyl Alcohol
- Author
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Seungjun Oh, Chulwoo Bae, Heehwan Kim, Donggeon Kwak, Taesung Kim, and Sunyoung Lee
- Subjects
010302 applied physics ,Materials science ,technology, industry, and agriculture ,Wet cleaning ,Isopropyl alcohol ,02 engineering and technology ,Contamination ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Pulp and paper industry ,01 natural sciences ,Atomic and Molecular Physics, and Optics ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,General Materials Science ,Wafer ,0210 nano-technology ,Analysis method - Abstract
Technological control over ultra-trace level contaminants is important for semiconductor development. Despite technological developments, defects remain in the single wafer wet cleaning process. In this paper, the source of the contamination is explained via trace analytical methods. Fluorine resin materials of polytetrafluoroethylene (PTFE) and ethylene tetrafluoroethylene (ETFE) are commonly used in semiconductor equipment. Isopropyl alcohol (IPA) oxidation reactions occur at high temperature below the boiling point due to impurities. IPA changed to different alcohol forms from gas chromatography (GCMS) analysis. The oxygen concentration in the X-ray photoelectron spectroscopy (XPS) results increased and formed new bonds in IPA with fluorine resin. These reactions confirmed that cations were a catalyst from the time-of-flight secondary ion mass spectrometry (TOF-SIMS) results. Representative ions were Fe+, K+, and Na+ with different concentrations for each material.
- Published
- 2021
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