1. Self-aligned block technology: a step toward further scaling
- Author
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Jeffrey S. Smith, Ryan Ryoung Han Kim, Kathleen Nafus, Christopher J. Wilson, Zsolt Tokei, Lior Huli, Daniele Piumi, Julien Ryckaert, Victor Vega Gonzalez, Julie Bannister, Frederic Lazzarino, Nihar Mohanty, Steven Scheer, Arindam Mallik, Stefan Decoster, Carlos Fonseca, Kathy Barla, Marc Demand, Kaushik A. Kumar, Yannick Feurprier, Philippe Leray, Anton J. deVilliers, Jürgen Boemmels, and Vinh Luong
- Subjects
010302 applied physics ,Computer science ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Metal ,Back end of line ,Chemical-mechanical planarization ,visual_art ,0103 physical sciences ,visual_art.visual_art_medium ,Electronic engineering ,Node (circuits) ,Layer (object-oriented design) ,0210 nano-technology ,Scaling ,Block (data storage) - Abstract
In this work, we present and compare two integration approaches to enable self-alignment of the block suitable for the 5- nm technology node. The first approach is exploring the insertion of a spin-on metal-based material to memorize the first block and act as an etch stop layer in the overall integration. The second approach is evaluating the self-aligned block technology employing widely used organic materials and well-known processes. The concept and the motivation are discussed considering the effects on design and mask count as well as the impact on process complexity and EPE budget. We show the integration schemes and discuss the requirements to enable self-alignment. We present the details of materials and processes selection to allow optimal selective etches and we demonstrate the proof of concept using a 16- nm half-pitch BEOL vehicle. Finally, a study on technology insertion and cost estimation is presented.
- Published
- 2017
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