1. Narrow linewidth near-UV InGaN laser diode based on external cavity fiber Bragg grating
- Author
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Antoine Congar, Mathilde Gay, Georges Perin, Dominique Mammez, Jean-Claude Simon, Pascal Besnard, Julien Rouvillain, Thierry Georges, Laurent Lablonde, Thierry Robin, and Stéphane Trebaol
- Subjects
Fabrication ,Materials science ,FOS: Physical sciences ,Physics::Optics ,02 engineering and technology ,01 natural sciences ,law.invention ,010309 optics ,Laser linewidth ,Narrowband ,Optics ,Fiber Bragg grating ,law ,0103 physical sciences ,Physics::Atomic Physics ,Diode ,Laser diode ,business.industry ,021001 nanoscience & nanotechnology ,Atomic and Molecular Physics, and Optics ,Interferometry ,Whispering-gallery wave ,0210 nano-technology ,business ,Optics (physics.optics) ,Physics - Optics - Abstract
We realize a fiber Bragg grating InGaN-based laser diode emitting at 400 nm and demonstrate its high coherency. Thanks to the fabrication of a narrowband fiber Bragg grating in the near-UV, we can reach single-mode and single-frequency regimes for the self-injection locked diode. The device exhibits 44 dB side-mode suppression ratio and mW output power. Detailed frequency noise analysis reveals sub-MHz integrated linewidth and 16 kHz intrinsic linewidth. Such a narrow linewidth laser diode in the near-UV domain with a compact and low-cost design could find applications whenever coherency and interferometric resolutions are needed.
- Published
- 2021