1. Radiation-Tolerant Flexible Large-Area Electronics Based on Oxide Semiconductors
- Author
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Allegra Sacchetti, Pedro Barquinha, Jacqueline Bablet, Maria Teresa Lobato, Beatrice Fraboni, Rodrigo Martins, Tobias Cramer, Vincent Fischer, Elvira Fortunato, Mohamed Benwadih, Cramer, Tobia, Sacchetti, Allegra, Lobato, Maria Teresa, Barquinha, Pedro, Fischer, Vincent, Benwadih, Mohamed, Bablet, Jacqueline, Fortunato, Elvira, Martins, Rodrigo, and Fraboni, Beatrice
- Subjects
010302 applied physics ,Materials science ,business.industry ,Oxide ,flexible electronics, thin film transistor, radiation damage, semiconducting oxides, organic electronics ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,7. Clean energy ,Flexible electronics ,Electronic, Optical and Magnetic Materials ,Ionizing radiation ,Organic semiconductor ,chemistry.chemical_compound ,chemistry ,Thin-film transistor ,Absorbed dose ,0103 physical sciences ,Radiation damage ,Optoelectronics ,0210 nano-technology ,business ,Radiation hardening - Abstract
Large-area electronics for applications in environments with radioactive contamination or medical X-ray detectors require materials and devices resistant to continuous ionizing radiation exposure. Here the superior X-ray radiation hardness of oxide thin fi lm transistors (TFTs) based on galliumindium-zinc oxide is demonstrated, when compared to organic ones. In the experiments both TFTs are subjected to X-ray radiation and their performances are monitored as a function of total ionizing dose. Flexible oxide TFTs maintain a constant mobility of 10 cm 2 V −1 s −1 even after exposure to doses of 410 krad(SiO 2 ), whereas organic TFTs lose 55% of their transport performance. The exceptional resistance of oxide semiconductors ionization damage is attributed to their intrinsic properties such as independence of transport on long-range order and large heat of formation.
- Published
- 2016