Search

Hybrid lead halide perovskites have reached comparable efficiencies to state-of-the-art silicon solar cell technologies. However, a remaining key challenge toward commercialization is the resolution of the perovskite device instability. In this work, we identify for the first time the mobile nature of bis(trifluoromethanesulfonyl)imide (TFSI-), a typical anion extensively employed in p-type dopants for 2,2'7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'spirofluorene (spiro-OMeTAD). We demonstrate that TFSI- can migrate through the perovskite layer via the grain boundaries and accumulate at the perovskite/electron-transporting layer (ETL) interface. Our findings reveal that the migration of TFSI- enhances the device performance and stability, resulting in highly stable p-i-n cells that retain 90% of their initial performance after 1600 h of continuous testing. Our systematic study, which targeted the effect of the nature of the dopant and its concentration, also shows that TFSI- acts as a dynamic defect-healing agent, which self-passivates the perovskite crystal defects during the migration process and thereby decreases nonradiative recombination pathways. more...

Non-fullerene ETMs are emerging as a hot topic in the field of PSCs due to the inherent shortcomings of fullerene derivatives. Herein, the potential of SubPcs as ETMs in PSCs has been evaluated. To this end, ETMs based on two SubPcs (with chlorine or fluorine at the axial position) have been incorporated in PSCs, where the perovskite is deposited by either solution processing (CsFAMAPbIBr) or thermal evaporation (MAPI). The device performance and morphology of these devices are analyzed in depth using several techniques, and the interfacial effects induced by the SubPcs are studied using PL and TR-PL. In all cases, the SubPc with axial chlorine led to higher efficiencies. Thus, a maximum PCE of 10.8% was achieved with the champion device using a SubPc/C60 double-layer ETM. more...

Carrier multiplication (CM) generates multiple electron-hole pairs in a semiconductor from a single absorbed photon with energy exceeding twice the band gap. Thus, CM provides a promising way to circumvent the Shockley-Queisser limit of solar cells. The ideal material for CM should have significant overlap with the solar spectrum and should be able to fully utilize the excess energy above the band gap for additional charge carrier generation. We report efficient CM in mixed Sn/Pb halide perovskites (band gap of 1.28 eV) with onset just above twice the band gap. The CM rate outcompetes the carrier cooling process leading to efficient CM with a quantum yield of 2 for photoexcitation at 2.8 times the band gap. Such efficient CM characteristics add to the many advantageous properties of mixed Sn/Pb metal halide perovskites for photovoltaic applications. more...

Exfoliated transition metal dichalcogenide (TMD) nanomaterials possess remarkable and tunable semiconducting properties which make them competitive for use in ultrathin, flexible devices such as ph... more...

Colloidal quantum dots (QDs) allow great flexibility in the design of optoelectronic devices, thanks to their size-dependent optical and electronic properties and the possibility to fabricate thin films with solution-based processing. In particular, in QD-based heterojunctions, the band gap of both components can be controlled by varying the size of the QDs. However, control over the band alignment between the two materials is required to tune the dynamics of carrier transfer across a heterostructure. We demonstrate that ligand exchange strategies can be used to control the band alignment of PbSe and CdSe QDs in a mixed QD solid, shifting it from a type-I to a type-II alignment. The change in alignment is observed in both spectroelectrochemical and transient absorption measurements, leading to a change in the energy of the conduction band edges in the two materials and in the direction of electron transfer upon photoexcitation. Our work demonstrates the possibility to tune the band offset of QD heterostructures via control of the chemical species passivating the QD surface, allowing full control over the energetics of the heterostructure without requiring changes in the QD composition. more...

Colloidal quantum dots (CQDs) have recently gained attention as materials for manufacturing optoelectronic devices in view of their tunable light absorption and emission properties and compatibility with low-temperature thin-film manufacture. The realization of CQD inkjet-printed infrared photodetectors has thus far been hindered by incompatibility between the chemical processes that produce state-of-the-art CQD solution-exchanged inks and the requirements of ink formulations for inkjet materials processing. To achieve inkjet-printed CQD solids with a high degree of reproducibility, as well as with the needed morphological and optoelectronic characteristics, we sought to overcome the mismatch among these processing conditions. In this study, we design CQD inks by simultaneous evaluation of requirements regarding ink colloidal stability, jetting conditions, and film morphology for different dots and solvents. The new inks remain colloidally stable, achieved through a design that suppresses the reductant properties of amines on the dots' surface. After drop ejection from the nozzle, the quantum dot material is immobilized on the substrate surface due to the rapid evaporation of the low boiling point amine-based compound. Concurrently, the high boiling point solvent allows for the formation of a thin film of high uniformity, as is required for the fabrication of high-performance IR photodetectors. We fabricate inkjet-printed photodetectors exhibiting the highest specific detectivities reported to date (above 10 more...

InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for competing QDs that contain Cd or Pb–providing a potentially safer commercial product. However, compared to other colloidal QDs, InP QDs remain sparsely used in devices and their electronic transport properties are largely unexplored. Here, we use time-resolved microwave conductivity measurements to study charge transport in films of InP and InZnP colloidal quantum dots capped with a variety of short ligands. We find that transport in InP QDs is dominated by trapping effects, which are mitigated in InZnP QDs. We improve charge carrier mobilities with a range of ligand-exchange treatments and for the best treatments reach mobilities and lifetimes on par with those of PbS QD films used in efficient solar cells. To demonstrate the device-grade quality of these films, we construct solar cells based on InP & InZnP QDs with power conversion efficiencies of 0.65 and 1.2%, respectively. This represents a large step forward in developing Cd- and Pb-free next-generation optoelectronic devices. more...

Mg2Si is apart from its conductivity properties expected to be a promising candidate for thermoelectric applications due to its low toxicity, low costs, and the high abundance of its precursor chemicals. Through the addition of a homogeneous distribution of nanoparticles (e.g. MgO) and by reducing the size of Mg2Si to the nanometer regime, it is possible to decrease the thermal conductivity by increasing phonon-interface scattering and, as a result, improve the thermoelectric properties. However, classical approaches do not allow for the synthesis of nanocomposites from Mg2Si and MgO. In this work, a straightforward route is presented towards homogeneously mixed Mg2Si/MgO via a two-step magnesiothermic reduction process starting from sol–gel derived hierarchically organized porous silica. Monolithic materials composed of Mg2Si and MgO in variable molar ratios are built up from a macroporous network of Mg2Si with homogeneously distributed MgO particles exhibiting a crystallite size in the range of 24–37 nm. more...

We functionalize PbS nanocrystals with the organic semiconductor Zn β-tetraaminophthalocyanine to design a nanostructured solid-state material with frequent organic-inorganic interfaces. By transient absorption and fluorescence spectroscopy, we investigate the optoelectronic response of this hybrid material under near-infrared excitation to find efficient charge transfer from the nanocrystals to the molecules. We demonstrate that the material undergoes cooperative sensitization of two nanocrystals followed by photon upconversion and singlet emission of the organic semiconductor. The upconversion efficiency resembles that of comparable systems in solution, which we attribute to the large amount of interfaces present in this solid-state film. We anticipate that this synthetic strategy has great prospects for increasing the open-circuit voltage in PbS nanocrystal-based solar cells. more...

In this work, we investigate the occurrence of localized surface plasmon resonances (LSPRs) in different nickel sulfide nanostructures. Therefore, spherical and anisotropic nickel sulfide nanoparticles (NPs) are synthesized and analyzed regarding their optical properties by UV/vis/NIR and transient absorption spectroscopy. Furthermore, new pathways for the synthesis of spherical Ni3S2 nanodots with an extremely narrow size distribution, as well as Au–Ni3S2 core–shell NPs with controllable shell thickness, are presented. Our results show that NPs of different metallic nickel sulfide phases like Ni3S2 and Ni3S4 exhibit LSPR bands in the visible regime of the electromagnetic spectrum, which possibly makes them a comparably cheaper alternative to NPs consisting of noble metals like Au and Ag. In case of the presented plasmonic core–shell particles, the resonance frequency of the plasmon can be tuned between those of pure gold and pure Ni3S2 NPs by varying the Ni3S2 shell thickness. more...

Singlet fission in tetracene generates two triplet excitons per absorbed photon. If these triplet excitons can be effectively transferred into silicon (Si) then additional photocurrent can be generated from photons above the bandgap of Si. This could alleviate the thermalization loss and increase the efficiency of conventional Si solar cells. Here we show that a change in the polymorphism of tetracene deposited on Si due to air exposure, facilitates triplet transfer from tetracene into Si. Magnetic field-dependent photocurrent measurements confirm that triplet excitons contribute to the photocurrent. The decay of tetracene delayed photoluminescence was used to determine a triplet transfer time of 215 ns and a maximum yield of triplet transfer into Si of ~50 %. Our study suggests that control over the morphology of tetracene during deposition will be of great importance to boost the triplet transfer yield further. more...

International audience; In this study, we report the synthesis and characterization of nonprecious bimetallic iron–molybdenum sulfide bio-inspired electrocatalysts for the hydrogen evolution reaction (HER). Iron–molybdenum sulfide materials were obtained through three distinct scalable synthetic approaches using microwave irradiation or heat treatment in furnace under inert and reductive atmospheres. These electrocatalysts were combined with carbon nanotubes (CNTs), and their activity for the hydrogen evolution reaction (HER) was studied in acidic environment. The most efficient composite material of the series was obtained by microwave synthesis and displays a current density per geometric area of 10 mA·cm–2 at an overpotential of 140 mV with unity faradic efficiency for hydrogen evolution. This composite cathode catalyst was implemented into a proton exchange membrane (PEM) electrolyzer single cell with iridium black as the anode catalyst and could be operated at 0.5 A·cm–2, requiring less than 300 mV additional voltage compared to Pt and with remarkable stability during accelerated stress testing. more...

Surface passivation of the perovskite photo absorber is a key factor to improve the photovoltaic performance. So far robust passivation strategies have not yet been revealed. Here, we demonstrate a successful passivation strategy which controls the Fermi-level of the perovskite surface by improving the surface states. Such Fermi-level control caused band-bending between the surface and bulk of the perovskite, which enhanced the hole-extraction from the absorber bulk to the HTM side. As an added benefit, the inorganic passivation layer improved the device light stability. By depositing a thick protection layer on the complete device, a remarkable waterproofing effect was obtained. As a result, an enhancement ofVOCand the conversion efficiency from 20.5% to 22.1% was achieved. We revealed these passivation mechanisms and used perhydropoly(silazane) (PHPS) derived silica to control the perovskite surface states. more...

Triarylamine-substituted bithiophene (BT-4D), terthiophene (TT-4D), and quarterthiophene (QT-4D) small molecules are synthesized and used as low-cost hole-transporting materials (HTMs) for perovskite solar cells (PSCs). The optoelectronic, electrochemical, and thermal properties of the compounds are investigated systematically. The BT-4D, TT-4D, and QT-4D compounds exhibit thermal decomposition temperature over 400 °C. The n-i-p configured perovskite solar cells (PSCs) fabricated with BT-4D as HTM show the maximum power conversion efficiency (PCE) of 19.34% owing to its better hole-extracting properties and film formation compared to TT-4D and QT-4D, which exhibit PCE of 17% and 16%, respectively. Importantly, PSCs using BT-4D demonstrate exceptional stability by retaining 98% of its initial PCE after 1186 h of continuous 1 sun illumination. The remarkable long-term stability and facile synthetic procedure of BT-4D show a great promise for efficient, stable, and low-cost HTMs for PSCs for commercial applications. more...

Quantum-dot-in-perovskite solids are excellent candidates for infrared light-emitting applications. The first generation of dot-in-perovskite light-emitting diodes (LEDs) has shown bright infrared electroluminescence with tunable emission wavelength; however, their performance has been limited by degradation of the active layer at practical operating voltages. This arises from the instability of the three-dimensional (3D) organolead halide perovskite matrix. Herein we report the first dot-in-perovskite solids that employ two-dimensional (2D) perovskites as the matrix. 2D perovskite passivation is achieved via an in situ alkylammonium/alkylamine substitution carried out during the quantum dot (QD) ligand exchange process. This single-step film preparation process enables deposition of the QD/perovskite active layers with thicknesses of 40 nm, over seven times thinner than the first-generation dot-in-perovskite thin films that relied on a multistep synthesis. The dot-in-perovskite film roughness improved fr... more...

We simultaneously surface-functionalize PbS nanocrystals with Cu 4,4′,4′′,4′′′-tetraaminophthalocyanine and assemble this hybrid material into macroscopic monolayers. Electron microscopy and X-ray scattering reveal a granular mesocrystalline structure with strong coherence between the atomic lattice and the superlattice of nanocrystals within each domain. Terahertz spectroscopy and field-effect transistor measurements indicate efficient coupling of holes throughout the hybrid thin film, in conjunction with a pronounced photoresponse. We demonstrate the potential of this material for optoelectronic applications by fabricating a light-effect transistor. more...

Two-dimensional (2D) semiconductors hold high potential for the implementation of efficient ultrathin electronics (e.g. field-effect transistors, light emitting diodes and solar cell devices). In recent years, colloidal methods to synthesize ultrathin 2D materials have been developed that offer alternatives (like the production of non-layered 2D materials and upscaling) to mechanical exfoliation methods. By focusing on optoelectronic applications, it is important to characterize the nature and dynamics of photoexcited states in these materials. In this paper, we use ultrafast transient absorption (TA) and terahertz (THz) spectroscopy as optimal tools for such a characterization. We choose recently synthesized ultrathin colloidal 2D InSe nanosheets (inorganic layer thickness 0.8–1.7 nm; ≤5 nm including ligands) for discussing TA and THz spectroscopic studies and elucidate their charge carrier dynamics under photoexcitation with TA. THz spectroscopy is then used to extract contactless AC mobilities as high as 20±2 cm2/Vs in single InSe layers. The obtained results underpin the general applicability of TA and THz spectroscopy for characterizing photoexcited states in 2D semiconductors. more...

The implementation of next generation ultrathin electronics by applying highly promising dimensionality-dependent physical properties of two-dimensional (2D) semiconductors is ever increasing. In this context, the van der Waals layered semiconductor InSe has proven its potential as photodetecting material with high charge carrier mobility. We have determined the photogeneration charge carrier quantum yield and mobility in atomically thin colloidal InSe nanosheets (inorganic layer thickness 0.8-1.7 nm, mono/double-layers, ≤ 5 nm including ligands) by ultrafast transient terahertz (THz) spectroscopy. A near unity quantum yield of free charge carriers is determined for low photoexcitation density. The charge carrier quantum yield decreases at higher excitation density due to recombination of electrons and holes, leading to the formation of neutral excitons. In the THz frequency domain, we probe a charge mobility as high as 20 ± 2 cm2/(V s). The THz mobility is similar to field-effect transistor mobilities extracted from unmodified exfoliated thin InSe devices. The current work provides the first results on charge carrier dynamics in ultrathin colloidal InSe nanosheets. more...

ZnS–CuInS2 (ZCIS) alloy nanostructures are becoming increasingly important materials because of their photoluminescence properties. Here we explore the emission properties of ZCIS quantum dots (QDs) capped with dodecanethiol, which exhibit Zn:Cu-dependent emission properties. Absorption and photoluminescence excitation spectra indicate a single, composition-independent light absorbing state. The emission spectra point out the existence of two emissive states with lifetimes of ∼10 ns and ∼100 ns. The photoluminescence and time-resolved emission analysis provide insight into the synergy between the two intraband states and the possibility of modulating the emission through variation in the Zn/Cu ratio. Better understanding of light absorbing and emission mechanisms in alloyed nanostructures is essential for future development of photoelectric and display devices. more...

Solution-processable two-dimensional (2D) semiconductors with chemically tunable thickness and associated tunable band gaps are highly promising materials for ultrathin optoelectronics. Here, the properties of free charge carriers and excitons in 2D PbS nanosheets of different thickness are investigated by means of optical pump-terahertz probe spectroscopy. By analyzing the frequency-dependent THz response, a large quantum yield of excitons is found. The scattering time of free charge carriers increases with nanosheet thickness, which is ascribed to reduced effects of surface defects and ligands in thicker nanosheets. The data discussed provide values for the DC mobility in the range 550-1000 cm2 V-1 s-1 for PbS nanosheets with thicknesses ranging from 4 to 16 nm. Results underpin the suitability of colloidal 2D PbS nanosheets for optoelectronic applications. more...

Carrier multiplication (CM) is the process in which multiple electron–hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing. more...

Thermalization losses limit the photon-to-power conversion of solar cells at the high-energy side of the solar spectrum, as electrons quickly lose their energy relaxing to the band edge. Hot-electron transfer could reduce these losses. Here, we demonstrate fast and efficient hot-electron transfer between lead selenide and cadmium selenide quantum dots assembled in a quantum-dot heterojunction solid. In this system, the energy structure of the absorber material and of the electron extracting material can be easily tuned via a variation of quantum-dot size, allowing us to tailor the energetics of the transfer process for device applications. The efficiency of the transfer process increases with excitation energy as a result of the more favorable competition between hot-electron transfer and electron cooling. The experimental picture is supported by time-domain density functional theory calculations, showing that electron density is transferred from lead selenide to cadmium selenide quantum dots on the sub-picosecond timescale., Efficient use of high-energy, or “hot”, carriers could increase the efficiency of solar cells, provided efficient extraction of electrons at a specific energy. Here, the authors show the presence of hot-electron transfer between two quantum dot species, allowing facile optimization of the extraction energy. more...

Indium antimonide (InSb) quantum dots (QDs) have unique and interesting photophysical properties, but widespread experimentation with InSb QDs is lacking due to the difficulty in synthesizing this material. The key experimental challenge in fabricating InSb QDs is preparing a suitable Sb-precursor in the correct oxidation state that reacts with the In-precursor in a controllable manner. Here, we review and discuss the synthetic strategies for making colloidal InSb QDs and present a new reaction scheme yielding small (∼1 nm diameter) InSb QDs. This was accomplished by employing Sb(NMe2)3 as the antimony precursor and by screening different reducing agents that can selectively reduce it to stibine in situ. The released SbH3, subsequently, reacts with In carboxylate to form small InSb clusters. The absorption features are moderately tunable (from 400 nm to 660 nm) by the amount and rate of reductant addition as well as the temperature of injection and subsequent annealing. Optical properties were probed with transient absorption spectroscopy and show complex time and spectral dependencies. more...

Stability of quantum dot (QD) films is an issue of concern for applications in devices such as solar cells, LEDs, and transistors. This paper analyzes and optimizes the passivation of such QD films using gas-phase deposition, resulting in enhanced stability. Crucially, we deposited alumina at economically attractive conditions, room temperature and atmospheric pressure, on (1,2-ethanediamine) capped PbSe QD films using an approach based on atomic layer deposition (ALD), with trimethylaluminum (TMA) and water as precursors. We performed coating experiments from 1 to 25 cycles on the QD films, finding that alumina formed from the first exposure of TMA. X-ray photoelectron spectroscopy points to the presence of oxygen-rich compounds on the bare QD films, most likely from entrapped solvent molecules during the assembly of the QD films. These oxygenated compounds and the amine groups of the organic ligands react with TMA in the first cycle, resulting in a fast growth of alumina. Using 10 cycles resulted in a QD film that was optically stable for at least 27 days. Depositing alumina at ambient conditions is preferred, since the production of the QD films is also carried out at room temperature and atmospheric pressure, allowing combination of both processes in a single go. more...

Multinary semiconductor nanoparticles such as CuInS2, AgInS2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS2–ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4-butylphenyldiphenylamine). Despite the similarity of the HOMO–LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices. more...

Macroporous magnesium silicide monoliths were successfully prepared by a two-step synthesis procedure. The reaction of gaseous magnesium vapor with macro-/mesoporous silicon, which was generated from hierarchically organized meso-/macroporous silica by a magnesiothermic reduction reaction, resulted in monolithic magnesium silicide with a cellular, open macroporous structure. By adjusting the reaction conditions, such as experimental set-up, temperature and time, challenges namely loss of porosity or phase purity of Mg2Si were addressed and monolithic magnesium silicide with a cellular network builtup was obtained. more...

To improve the stability and carrier mobility of quantum dot (QD) optoelectronic devices, encapsulation or pore infilling processes are advantageous. Atomic layer deposition (ALD) is an ideal technique to infill and overcoat QD films, as it provides excellent control over film growth at the sub-nanometer scale and results in conformal coatings with mild processing conditions. Different thicknesses of crystalline ZnO films deposited on InP QD films are studied with spectrophotometry and time-resolved microwave conductivity measurements. High carrier mobilities of 4 cm2 (V s)−1 and charge separation between the QDs and ZnO are observed. Furthermore, the results confirm that the stability of QD thin films is strongly improved when the inorganic ALD coating is applied. Finally, proof-of-concept photovoltaic devices of InP QD films are demonstrated with an ALD-grown ZnO electron extraction layer. more...

Positron Two Dimensional Angular Correlation of Annihilation Radiation (2D-ACAR) measurements reveal modifications of the electronic structure and composition at the surfaces of PbSe quantum dots (QDs), deposited as thin films, produced by various ligands containing either oxygen or nitrogen atoms. In particular, the 2D-ACAR measurements on thin films of colloidal PbSe QDs capped with oleic acid ligands yield an increased intensity in the electron momentum density (EMD) at high momenta compared to PbSe quantum dots capped with oleylamine. Moreover, the EMD of PbSe QDs is strongly affected by the small ethylediamine ligands, since these molecules lead to small distances between QDs and favor neck formation between near neighbor QDs, inducing electronic coupling between neighboring QDs. The high sensitivity to the presence of oxygen atoms at the surface can be also exploited to monitor the surface oxidation of PbSe QDs upon exposure to air. Our study clearly demonstrates that positron annihilation spectroscopy applied to thin films can probe surface transformations of colloidal semiconductor QDs embedded in functional layers., 20 pages, 4 figures, Supplemental Material (5 pages) more...

Hot-wire assisted atomic layer deposition (HWALD) is a novel energy-enhancement technique. HWALD enables formation of reactive species (radicals) at low substrate temperatures, without the generation of energetic ions and UV photons as by plasma. This approach employs a hot wire (tungsten filament) that is heated up to a temperature in the range of 1300–2000 °C to dissociate precursor molecules. HWALD has the potential to overcome certain limitations of plasma-assisted processes. This work investigates the ability of a heated tungsten filament to catalytically crack molecular hydrogen or ammonia into atomic hydrogen and nitrogen-containing radicals. The generation of these radicals and their successful delivery to the wafer (substrate) surface are experimentally confirmed by dedicated tellurium-etching and silicon-nitridation experiments. It further reports on deposition of low-resistivity oxygen-free tungsten films by using HWALD, as well as on the effect of hot-wire-generated nitrogen radicals and atomic hydrogen in deposition of aluminum nitride and boron nitride films. In parallel, this work provides important illustrative examples of using in situ real-time monitoring of deposition and etching processes, together with extracting a variety of film properties, by spectroscopic ellipsometry technique. more...

Organic-inorganic lead halide perovskites with over 23% power conversion efficiency have attracted enormous academic and industrial attention due to their low-cost fabrication and high device performance. Self-passivated tin oxide as an electron transport layer has shown potential mainly due to the enhanced electron transfer, stability and reduced hysteresis device features. Here we report on novel, non-colloidal tin oxide precursors based on acetylacetonate (one halide free and two halogenated with Cl and Br respectively). We explore the unique film morphology acquired from the non-colloidal precursors and the improved device performance they yield. Our results show that the halide residue in the films plays an impactful role in the thermal durability of the fabricated SnO2 film, as well as providing a passivation layer. Moreover, our optimized tin oxide films achieved an unprecedented power conversion efficiency of 22.19% in planar perovskite solar cells (21.4% certified by Newport), and once upscaled to large-area modules, 16.7% devices based on a 15 cm(2) area were achieved. more...

Printing nanosheet-network transistors Two-dimensional (2D) materials such as graphene and metal chalcogenides such as tungsten diselenide (WSe2) are attractive for use in low-cost thin-film transistors (TFTs) because they have high charge-carrier mobility. Kelly et al. printed TFTs from networks of exfoliated dispersions of 2D materials with graphene contacts, WSe 2 as the semiconductor, and a boron nitride separator. Electrolytic gating with ionic liquids enabled higher operating currents than achieved with comparable organic TFTs. Science , this issue p. 69 more...

Perovskite solar cells with mesoporous TiO2 electron transport layers have previously reached >22 % efficiency at the laboratory scale (10 cm2. Perovskite solar cells with printed and pristine (un-doped) inkjet-printed TiO2 layers yielded efficiencies of 18.29 %, which were found to outperform cells made with spin-coated and pristine TiO2 layers (16.91 %). When a quadruple-cation perovskite absorber containing Cs, formamidinium, methylammonium, and guanidinium was deposited by inkjet-printing onto the inkjet-printed TiO2 layer, nearly 12 % average efficiency was reached, with the champion cell reaching 14.11 %. This absorber exhibited higher efficiency and stability than did inkjet-printed MAPbI3 films deposited on the inkjet-printed TiO2 film. more...