44 results on '"Arka Dey"'
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2. Analysis of Photoresponse and Charge Transport Properties of Hydrothermally Synthesized ZnSe Nanoparticle Based Schottky Device
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Samit K. Ray, Arka Dey, and Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sec. III, Salt Lake, Kolkata 700106, India
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010302 applied physics ,Materials science ,business.industry ,Nanoparticle ,Schottky diode ,Charge (physics) ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,[SPI]Engineering Sciences [physics] ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
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- 2020
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3. Citrate combustion synthesized Al-doped CaCu3Ti4O12 quadruple perovskite: synthesis, characterization and multifunctional properties
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Kamalesh Pal, Arka Dey, Rajkumar Jana, Partha P. Ray, Parthasarathi Bera, Lalit Kumar, Tapas Kumar Mandal, Paritosh Mohanty, Md. Motin Seikh, and Arup Gayen
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General Physics and Astronomy ,02 engineering and technology ,Physical and Theoretical Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,0210 nano-technology ,01 natural sciences ,0104 chemical sciences - Abstract
Facile synthesis of Al-doped CaCu3Ti4O12 quadruple perovskite has been reported and it is projected to be a promising candidate for Schottky barrier diode application and a methanol steam reforming catalyst for hydrogen generation.
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- 2020
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4. Improvement of charge transport for hydrothermally synthesized Cd0.8Fe0.2S over co-precipitation method: A comparative study of structural, optical and magnetic properties
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Rajkumar Jana, Arka Dey, Mrinmay Das, Joydeep Datta, Partha Pratim Ray, Sudipta Bandyopadhyay, Sanjay Kumar, and Sayantan Sil
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010302 applied physics ,Materials science ,Mechanical Engineering ,Fermi level ,Analytical chemistry ,Schottky diode ,02 engineering and technology ,Magnetic semiconductor ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Space charge ,Dielectric spectroscopy ,symbols.namesake ,Mechanics of Materials ,0103 physical sciences ,symbols ,Density of states ,General Materials Science ,Crystallite ,Nyquist plot ,0210 nano-technology - Abstract
Here, we have elucidated the structural, optical, magnetic and electrical properties of Cd0.8Fe0.2S which is considered as diluted magnetic semiconductor (DMS). Cd0.8Fe0.2S materials were synthesized using co-precipitation (compound 1) and hydrothermal (compound 2) method. The particle size and the polycrystalline phase of the synthesized materials are significantly influenced by the synthesis procedures. Presence of antiferromagnetic coupling confirms the magnetic behavior of materials. The current-voltage (I-V) characteristics exhibit lower barrier height for the device based on compound 2 (0.59 eV) than the other device (0.64 eV). Furthermore, the 19 times enhanced mobility and lesser density of states near the Fermi level for the Al/compound 2/ITO configured device is enlightened by the space charge conduction mechanism. But, the interface resistances of the devices cannot be distinguished by the I-V characteristics. Therefore, we have tackled the problem by simulating the Nyquist plots obtained from impedance spectroscopy. We have fitted the Nyquist plots with the appropriate equivalent circuit and explained the mechanism of charge transport through the Schottky interface. The higher dc conductivity and lower relaxation time of diode fabricated by compound 2 confirm the outcomes obtained from I-V characteristics. The effect of particle size on charge transport was also analyzed.
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- 2019
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5. A tetranuclear nickel/lead complex with a salen type Schiff base: synthesis, structure and exploration of photosensitive Schottky barrier diode behaviour
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Shouvik Chattopadhyay, Partha Pratim Ray, Arka Dey, Michael G. B. Drew, and Sourav Roy
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Schiff base ,business.industry ,Band gap ,Ligand ,Schottky diode ,chemistry.chemical_element ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Catalysis ,0104 chemical sciences ,chemistry.chemical_compound ,Crystallography ,Nickel ,Semiconductor ,chemistry ,Materials Chemistry ,Molecule ,0210 nano-technology ,business ,Single crystal - Abstract
An X-ray characterized tetranuclear nickel(II)/lead(II) complex has been synthesized and characterized by elemental analysis, IR and single crystal X-ray diffraction studies. Single crystal X-ray analysis confirms that the complex contains two [(NiO2)Pb] cores joined with two DMF molecules. The complex shows interesting electrical properties. The optical band gap energy of the synthesized ligand and the complex has been evaluated as 3.87 and 3.08 eV, respectively. The solid state UV measurement implies the semiconductor behavior of the complex. The complex based device has been determined experimentally to behave as a Schottky diode.
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- 2019
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6. The development of a rapid self-healing semiconducting monoethanolamine-based Mg(OH)2 metallogel for a Schottky diode application with a high ON/OFF ratio
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Biswajit Dey, Arka Dey, Partha Pratim Ray, Santanu Majumdar, Amit Mandal, Amiya Dey, and Subhendu Dhibar
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Toughness ,Fabrication ,Atmospheric pressure ,Band gap ,Schottky diode ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Catalysis ,0104 chemical sciences ,Magnesium nitrate ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,Materials Chemistry ,0210 nano-technology ,Magnesium ion ,Diode - Abstract
An intriguing rapid self-healing functional Mg(OH)2 metallogel was instantaneously developed through the direct mixing of monoethanolamine and magnesium nitrate hexahydrate as the source of magnesium ions in a water medium at room temperature under atmospheric pressure. The rheological properties of the Mg(OH)2 metallogel were scrutinized, and this revealed the mechanical toughness of the semi-solid metallogel material. The outcome of the rheological experiment showed the self-healing property of the metallogel. The self-healing feature was rapid and it occurred within a few minutes of the insertion of a crack into the metallogel or the association of two separate metallogel parts. The morphology of the metallogel was visualized through field emission scanning electron microscopy and EDX spectral investigations. The experimentally estimated optical band gap suggested the semiconducting nature of the material. The semiconducting nature of the metallogel was further verified from the electrical properties. Finally, a technologically challenging device-type application was also realized by the successful fabrication of a Schottky barrier diode, and different device parameters were investigated to verify the performance. The fabricated diode based on the Mg(II) metallogel showed a very high ON/OFF ratio of 85.52.
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- 2019
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7. Performance analysis of Fe-doped calcium copper titanate quadruple perovskite in optoelectronic device
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Rajkumar Jana, Motin Seikh, Arup Gayen, Partha Pratim Ray, Kamalesh Pal, and Arka Dey
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010302 applied physics ,Materials science ,business.industry ,Schottky barrier ,General Physics and Astronomy ,Schottky diode ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Metal–semiconductor junction ,01 natural sciences ,chemistry.chemical_compound ,Semiconductor ,chemistry ,0103 physical sciences ,Calcium copper titanate ,Optoelectronics ,Physical and Theoretical Chemistry ,Thin film ,0210 nano-technology ,business ,Diode ,Perovskite (structure) - Abstract
We report here the synthesis of nanosized (50–55 nm) Fe-doped calcium copper titanate CaCu2.5Ti3.5FeO12 quadruple perovskite semiconductor by a two-step synthetic protocol involving citrate combustion for precursor synthesis followed by its calcination at different temperatures for the synthesis of the target materials. Materials were applied in thin film metal-semiconductor (MS) junction based Schottky Barrier Diodes (SBDs). The non-linear current-voltage characteristics indicate successful application of the materials in optoelectronic device. The device performance of the fabricated SBDs are analyzed by employing the thermionic emission (TE) theory and the space charge limited current (SCLC) theory followed by a schematic band structure.
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- 2018
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8. Analysis of interfaces in Bornite (Cu 5 FeS 4 ) fabricated Schottky diode using impedance spectroscopy method and its photosensitive behavior
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Sayantan Sil, Mrinmay Das, Rajkumar Jana, Dirtha Sanyal, Partha Pratim Ray, Joydeep Datta, Joydeep Dhar, Soumi Halder, and Arka Dey
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Electron mobility ,Materials science ,business.industry ,Mechanical Engineering ,Schottky diode ,Thermionic emission ,02 engineering and technology ,Semiconductor device ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Space charge ,0104 chemical sciences ,Dielectric spectroscopy ,Mechanics of Materials ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Diode ,DC bias - Abstract
In this report, we have synthesized Bornite (Cu5FeS4) material by hydrothermal synthesis technique. The interface characteristics of Al/Cu5FeS4/FTO Schottky barrier diode (SBD) are investigated by using ac impedance spectroscopy (IS) analysis (under dark condition) and dc current-voltage (I–V) measurements (under dark and light both condition). IS is a powerful tool to identify the interface regions of SBDs. Ac impedance spectra of Al/Cu5FeS4 SBD are recorded in the frequency range 40 Hz-20 MHz during dc bias scanning from -0.6 V to 0.6 V under dark condition. The diode parameter including ideality factor and barrier height is calculated from the conventional I–V measurement based on thermionic emission (TE) theory. Space charge limited current (SCLC) theory has been employed to further exemplify the improved performance of Cu5FeS4 based SBD, which points out that the carrier mobility is enhanced ∼2-fold after irradiation of light.
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- 2018
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9. Electron – Phonon interaction to tune metal – Semiconductor junction characteristics: Ultralow potential barrier and less non-thermionic emission
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Chandan Kumar Ghosh, Dipankar Das, Arka Dey, Swarupananda Bhattacharjee, Anirban Roychowdhury, Sayan Dey, Partha Pratim Ray, and Gopes Chandra Das
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Electron mobility ,Materials science ,business.industry ,Thermionic emission ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Metal–semiconductor junction ,01 natural sciences ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,symbols.namesake ,Vacancy defect ,symbols ,Density of states ,Rectangular potential barrier ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Raman spectroscopy ,High-resolution transmission electron microscopy - Abstract
We present a two-step facile method to prepare Ni2O3 coral–like and flower–like nanostructures first time followed by structural, optical characterizations by XRD, FESEM, HRTEM, Raman, luminescence spectroscopy etc. We also report rectifying I–V characteristics of Ni2O3 nanostructures/Al based metal–semiconductor junction with ultralow turn-on voltages (0.36 V), potential barrier (0.33 eV), very ideal thermionic current (η = 1.11). Photo-responsive character illustrates that the junction devices could be a promising material for light sensing application. Parameters like series resistance (111.4 Ω), electron mobility (16.73 × 10−10 m2V1s−1), diffusion length (5.13 × 10−7 m), density of states (3.09 × 1040 eVm−3) etc. have been evaluated and it is discussed that the defect (Ni3+ vacancy) induced electron–phonon interaction within the active semiconducting layer plays the crucial role to determine these parameters. Most importantly, it has been identified that the charge-transport across the junction follows non-adiabatic mechanism. Our results suggest a new insight into current transport mechanism that may be generalized to understand microstructural, defect dependence MS junctions.
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- 2018
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10. Improving performance of device made up of CuO nanoparticles synthesized by hydrothermal over the reflux method
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Rajkumar Jana, Partha Pratim Ray, Joydeep Datta, Pubali Das, Arka Dey, and Mrinmay Das
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Materials science ,Analytical chemistry ,Oxide ,General Physics and Astronomy ,Nanoparticle ,chemistry.chemical_element ,Schottky diode ,02 engineering and technology ,Surfaces and Interfaces ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Copper ,Hydrothermal circulation ,0104 chemical sciences ,Surfaces, Coatings and Films ,Dielectric spectroscopy ,chemistry.chemical_compound ,chemistry ,Rectification ,Thin film ,0210 nano-technology - Abstract
In this work, we have prepared copper (II) oxide (CuO) nanoparticles (NPs) via reflux (CuO (R)) and hydrothermal (CuO (H)) methods. The electrical parameters like rectification ratio, ideality factor and barrier height were compared between two synthesized CuO NPs after fabricating Al/CuO/ITO schottky barrier diode (SBD). Under dark, rectification ratio increased by 37% for CuO (H) than CuO (R). In a similar manner, photoresponse also significantly improved by a huge 93%. Impedance Spectroscopy measurements establish that CuO (H) shows better charge transport and lower carrier recombination compared to CuO (R). The enhanced device performance of the hydrothermally synthesized CuO based schottky diode can be attributed to the reduction in lattice defect density and its good thin film properties.
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- 2018
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11. Equivalent circuit analysis of Al/rGO-TiO2 metal-semiconductor interface via impedance spectroscopy: Graphene induced improvement in carrier mobility and lifetime
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Arka Dey, Rajkumar Jana, Sayantan Sil, Joydeep Datta, Mrinmay Das, Soumi Halder, and Partha Pratim Ray
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Electron mobility ,Materials science ,Graphene ,business.industry ,Mechanical Engineering ,Schottky barrier ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Space charge ,0104 chemical sciences ,law.invention ,Dielectric spectroscopy ,Depletion region ,Mechanics of Materials ,law ,Equivalent circuit ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Diode - Abstract
A metal-semiconductor (MS) contact often gives rise to a Schottky barrier junction and is immensely important in electronic devices. Recently, graphene and its nanocomposites have attracted interest for their tremendous potential in schottky barrier diodes (SBDs). To realize a high performance SBD, detail characterization of the MS interface is of utmost importance. In this regard, here we employ impedance spectroscopy (IS) as a simple yet powerful technique for the equivalent circuit analysis and characterization of Al/reduced graphene oxide(rGO)-TiO2 interface. Al/rGO-TiO2 SBDs are fabricated with different weight ratios of rGO (rGO:TiO2 = 0, 1:50, 1: 30, 1:15) in the composite and IS analysis is performed for all the SBDs. Built-in potential, charge carrier density, depletion layer width and barrier height of the diodes are extracted from capacitance-voltage measurements. Moreover, we obtain the charge career lifetime, mobility and diffusion length based on the equivalent circuit model. Current-voltage measurement is also performed and mobility values from IS are further verified by space charge limited current (SCLC) measurements. The best device performance and charge transport properties was exhibited by rGO:TiO2 = 1:15. The carrier mobility increased by almost 2.6 times compared to pure TiO2, while the lifetime and diffusion length improved by 113% and 130% respectively. In short, we demonstrate the equivalent circuit analysis for the investigation of Al/rGO-TiO2 MS interface and successfully implement the IS model to determine charge transport parameters. This study reveals the beneficial impact of graphene on device performance and establish the huge potential of IS technique for characterization of MS devices.
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- 2018
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12. Enhanced Photosensitive Schottky Diode Behavior of Pyrazine over 2-Aminopyrimidine Ligand in Copper(II)-Phthalate MOFs: Experimental and Theoretical Rationalization
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Partha Pratim Ray, Joaquín Ortega-Castro, Subrata Mukhopadhyay, Arka Dey, Pablo Ballester, Saikat Kumar Seth, Antonio Frontera, Anowar Hossain, and Robin G. Pritchard
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Materials science ,Pyrazine ,Ligand ,General Chemical Engineering ,Schottky diode ,chemistry.chemical_element ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Photochemistry ,01 natural sciences ,Copper ,Article ,0104 chemical sciences ,Ion ,chemistry.chemical_compound ,Photosensitivity ,chemistry ,Electrical resistivity and conductivity ,0210 nano-technology ,Visible spectrum - Abstract
Two novel Cu(II)-based metal-organic frameworks [C40H34Cu2N6O18 (1) and C20H18CuN2O10 (2)] have been synthesized using 2-aminopyrimidine or pyrazine ligands and phthalate ion and characterized spectroscopically and by X-ray single-crystal diffraction. Both 1 and 2 show electrical conductivity and photosensitivity, evidencing their potentiality in optoelectronic device applications. Experimental and theoretical investigations revealed that the electrical conductivity under irradiation of visible light increases compared to that under dark condition (photosensitive Schottky barrier diode behavior), especially in complex 2. Both 1 and 2 have been successfully applied in technologically challenging thin-film active devices.
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- 2018
13. Experimental and theoretical overview on bias dependent Debye relaxation and conduction mechanism of Cd 1-x Zn x S film and its significance in signal transport network
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Mrinmay Das, Arka Dey, Rajkumar Jana, Partha Pratim Ray, Pubali Das, Sayantan Sil, Soumi Halder, and Joydeep Datta
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Materials science ,Condensed matter physics ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Thermal conduction ,01 natural sciences ,Capacitance ,Signal ,0104 chemical sciences ,Dielectric spectroscopy ,Relaxation (physics) ,General Materials Science ,Grain boundary ,Crystallite ,0210 nano-technology ,Electrical impedance - Abstract
In this literature, bias dependent relaxation and conduction mechanism of grain and grain boundary of Cd1-xZnxS (x = 0, 0.4, 0.8) are discussed with the help of impedance spectroscopy. To get the insight of relaxation and conduction significance in signal transport network, we have simulated the experimental impedance value with appropriate circuit. The simulation provides bias dependent grain and grain boundary resistance and capacitance. It shows that the resistance of grain and grain boundary decreases with the increase in bias and is found to be lesser for Cd0·6Zn0.4S. Using various models we have found that the crystallite size of Cd0·6Zn0·4S is lowest with respect to the other samples and exhibits lower grain and grain boundary resistance with better relaxation. We have tried to correlate the bias dependent grain and grain boundary conduction mechanism with crystallite size using Mandurah model. So, this literature has tried to enlighten the bias dependent relaxation and conduction behavior of Cd1-xZnxS and the impact of grain and grain boundary in the signal transporting network.
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- 2018
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14. Lattice‐Defect‐Induced Piezo Response in Methylammonium‐Lead‐Iodide Perovskite Based Nanogenerator
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Sayantan Sil, Arka Dey, Partha Pratim Ray, Nur Amin Hoque, Sukhen Das, Dirtha Sanyal, and Joydeep Dhar
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chemistry.chemical_classification ,Materials science ,Condensed matter physics ,Iodide ,Nanogenerator ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Positron annihilation spectroscopy ,chemistry ,Lattice defects ,0210 nano-technology ,Perovskite (structure) - Published
- 2018
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15. Application of CaCu3Ti4O12 based quadruple perovskites as a promising candidate for optoelectronic devices
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Rajkumar Jana, Kamalesh Pal, Motin Seikh, Partha Pratim Ray, Arup Gayen, and Arka Dey
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010302 applied physics ,Materials science ,business.industry ,General Physics and Astronomy ,Schottky diode ,Thermionic emission ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Metal–semiconductor junction ,01 natural sciences ,Space charge ,Semiconductor ,0103 physical sciences ,Optoelectronics ,Physical and Theoretical Chemistry ,Diffusion (business) ,0210 nano-technology ,business ,Diode ,Perovskite (structure) - Abstract
We report the synthesis of nanosized (40–50 nm) CaCu 3- x Mn x Ti 4- x Mn x O 12 ( x = 0, 0.5 and 1) quadruple perovskite (QP) semiconductor via a modified combustion method for use as Schottky barrier diode (SBD) at the Al/QP junction. The fabricated SBD is analysed on the basis of thermionic emission theory to observe its quality and some important diode parameters. For insight analysis of charge transport mechanism through metal-semiconductor junction, theory of space charge limited currents is applied and discussed in the light of parameters like carrier concentration, mobility-lifetime product and diffusion length. The Mn-doped exhibit better device performance compared to parent material.
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- 2018
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16. Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles
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Arka Dey, Partha Pratim Ray, Sayantan Sil, Joydeep Dhar, and Rajkumar Jana
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010302 applied physics ,Materials science ,business.industry ,Band gap ,Mechanical Engineering ,Biasing ,02 engineering and technology ,Dielectric ,021001 nanoscience & nanotechnology ,01 natural sciences ,Dielectric spectroscopy ,Semiconductor ,Mechanics of Materials ,0103 physical sciences ,Optoelectronics ,General Materials Science ,Thin film ,0210 nano-technology ,business ,Electrical impedance ,DC bias - Abstract
In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (Eg = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.
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- 2018
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17. Two Zinc(II)-Based Metal Complexes of New Pyrimidine Derived Ligand: Anion-Dependent Structural Variations and Charge Transport Property Analysis
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Joaquín Ortega-Castro, Arka Dey, Antonio Frontera, Subrata Mukhopadhyay, Sudipta Chatterjee, Somnath Ray Choudhury, Kalyan Das, Saugata Konar, and Partha Pratim Ray
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Materials science ,Band gap ,chemistry.chemical_element ,02 engineering and technology ,Zinc ,010402 general chemistry ,01 natural sciences ,Metal ,Physical and Theoretical Chemistry ,Ligand ,business.industry ,Schottky diode ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Indium tin oxide ,Crystallography ,General Energy ,Semiconductor ,chemistry ,visual_art ,visual_art.visual_art_medium ,0210 nano-technology ,business ,Single crystal - Abstract
Two zinc(II) based metal complexes, [Zn(Pymox)Cl2] (1) and [Zn6(Pymox)6(μ2-O)3] (2), where Pymox = 3-[(4,6-dimethyl-pyrimidine-2-yl)-hydrazono]-butan-2-one oxime, have been synthesized and characterized by elemental analysis, IR, and single crystal X-ray diffraction studies. Single crystal X-ray analysis confirms that one of the synthesized products (1) is a mononuclear complex and another (2) is a hexanuclear Zn complex. The optical band gap energy in both the complexes (3.43 eV in 1 and 2.36 eV in 2) from solid state UV measurement explores semiconductor behavior of the synthesized materials. The dielectric parameters such as charge transfer resistance, room temperature dc conductivity and electron lifetime measurement shows the superiority of complex 2 over complex 1. Therefore, the Schottky barrier diode (SBD) electronic devices were fabricated by using these two complexes with aluminum (Al) and indium tin oxide (ITO) in sandwich configuration—ITO/1 or 2/Al. Both the devices exhibit sound rectificatio...
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- 2018
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18. Synthesis, Characterization and Catalytic Activity of Quadruple Perovskite: CaCu3-x Mn x Ti4-x Mn x O12 (x =0, 0.5 and 1.0)
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Arup Gayen, Arka Dey, Motin Seikh, Kamalesh Pal, Tapas Kumar Mandal, Oleg I. Lebedev, Partha Pratim Ray, and Natalia E. Mordvinova
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Crystallography ,Materials science ,02 engineering and technology ,General Chemistry ,Dielectric ,010402 general chemistry ,021001 nanoscience & nanotechnology ,0210 nano-technology ,01 natural sciences ,0104 chemical sciences ,Perovskite (structure) ,Characterization (materials science) ,Catalysis - Published
- 2018
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19. Possibility to Use Hydrothermally Synthesized CuFeS2 Nanocomposite as an Acceptor in Hybrid Solar Cell
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Sayantan Sil, Soumi Halder, Arka Dey, Joydeep Datta, and Partha Pratim Ray
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Photoluminescence ,Materials science ,Nanocomposite ,Band gap ,Mechanical Engineering ,02 engineering and technology ,Hybrid solar cell ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Acceptor ,0104 chemical sciences ,Electron diffraction ,Mechanics of Materials ,Physical chemistry ,General Materials Science ,Selected area diffraction ,0210 nano-technology ,HOMO/LUMO - Abstract
Here we have approached the plausible use of CuFeS2 nanocomposite as an acceptor in organic–inorganic hybrid solar cell. To produce CuFeS2 nanocomposite, hydrothermal strategy was employed. The room-temperature XRD pattern approves the synthesized material as CuFeS2 with no phase impurity (JCPDS Card no: 37-0471). The elemental composition of the material was analyzed from the TEM-EDX data. The obtained selected area electron diffraction (SAED) planes harmonized with the XRD pattern of the synthesized product. Optical band gap (4.14 eV) of the composite from UV–Vis analysis depicts that the synthesized material is belonging to wide band gap semiconductor family. The HOMO (− 6.97 eV) and LUMO (− 2.93 eV) positions from electrochemical study reveal that there is a possibility of electron transfer from MEH-PPV to CuFeS2. The optical absorption and photoluminescence spectra of MEH-PPV:CuFeS2 (donor:acceptor) composite were recorded sequentially by varying weight ratios. The monotonic blue shifting of the absorption peak position indicated the interaction between donor and acceptor materials. The possibility of electron transfer from donor (MEH-PPV) to acceptor (CuFeS2) was approved with photoluminescence analysis. Subsequently, we have fabricated a hybrid solar cell by incorporating CuFeS2 nanocomposite with MEH-PPV in open atmosphere and obtained 0.3% power conversion efficiency.
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- 2018
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20. Gaussian Distribution of Inhomogeneous Barrier Height of Al/ZnS/ITO Schottky Barrier Diodes
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Joydeep Dhar, Arka Dey, Rajkumar Jana, Pubali Das, and Partha Pratim Ray
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010302 applied physics ,Materials science ,Condensed matter physics ,Schottky barrier ,Gaussian ,Schottky diode ,Thermionic emission ,02 engineering and technology ,Atmospheric temperature range ,021001 nanoscience & nanotechnology ,01 natural sciences ,Standard deviation ,symbols.namesake ,0103 physical sciences ,symbols ,0210 nano-technology ,Temperature coefficient ,Diode - Abstract
The current–voltage (I–V) measurements on Al/ZnS Schottky barrier diodes in the temperature range 303 –423 K by the step of 15 K were carried out. The forward I–V characteristics were analyzed on the basis of the thermionic emission theory. The temperature dependence I-V parameters such as ideality factor (n) and barrier height (ϕ b0 ) have been explained on the basis of inhomogeneity. An abnormal increase of apparent barrier height and decrease of ideality factor with increasing temperature have been explained due to the barrier height inhomogeneities on the basis of the thermionic emission theory with Gaussian distribution. Experimental results reveal the existence of a single Gaussian distribution with apparent barrier height value ( ϕ b 0 ‾ ) of 1.091 eV and standard deviations (σ s ) of 0.18 V. Richardson constant (A*) was obtained as 8.49 x 10 -2 A.m -2 K -2 from the ln(I 0 /T 2 ) vs. q/kT plot, which is far from the calculated value of 5.6 x 10 5 A.m -2 K -2 . The modified Richardson plotof ln(I 0 /T 2 ) – (q 2 σ s 2 /2k 2 T 2 ) gives ϕ b 0 ‾ and A* values as 1.093 eV and 6.07 x 10 5 A.m -2 K -2 , without using the temperature coefficient of the barrier height. This obtained value of A* is extremely close to the previously calculated value. So, the temperature dependence of the forward bias I - V characteristics of the Schottky device can be successfully explained on the basis of the thermionic emission mechanism with a single Gaussian distribution of the barrier heights.
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- 2018
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21. A supramolecular Cd(<scp>ii</scp>)-metallogel: an efficient semiconductive electronic device
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Santanu Majumdar, Arka Dey, Subhendu Dhibar, Biswajit Dey, Debasish Ghosh, Partha Pratim Ray, and Amit Mandal
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Formamide ,Cadmium ,Materials science ,Field emission scanning electron microscopy ,Sonication ,Supramolecular chemistry ,chemistry.chemical_element ,Schottky diode ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Inorganic Chemistry ,Solvent ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,OXALIC ACID DIHYDRATE ,0210 nano-technology - Abstract
A sonication-based strategy for the synthesis of a functional supramolecular Cd(ii)-metallogel (CdA-OX) has been achieved through mixing cadmium(ii) acetate dihydrate and oxalic acid dihydrate, a low molecular weight gelator (LMWG), in N,N-dimethyl formamide solvent at room temperature under atmospheric pressure. The mechanical properties of the supramolecular Cd(ii)-metallogel were investigated through a rheological study. The pebble-like self-assembly hierarchical architecture of the supramolecular metallohydrogel was visualized through field emission scanning electron microscopy investigations. The electrical properties of the metallogel were thoroughly examined and indicate its semiconducting nature. Based on its conducting properties, the Cd(ii)-metallogel was successfully applied to a Schottky barrier diode. Overall, this work is a novel instance of technologically challenging electronic device application of a Cd(ii)-metallogel.
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- 2018
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22. Two isostructural linear coordination polymers: the size of the metal ion impacts the electrical conductivity
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Arka Dey, Suvendu Maity, Sakhiul Islam, Faruk Ahmed, Basudeb Dutta, Chittaranjan Sinha, Mohammad Hedayetullah Mir, Partha Pratim Ray, Prasanta Ghosh, and Kaushik Naskar
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Electron mobility ,Acetylenedicarboxylic acid ,Chemistry ,Supramolecular chemistry ,02 engineering and technology ,General Chemistry ,Conductivity ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Catalysis ,0104 chemical sciences ,Metal ,Crystallography ,chemistry.chemical_compound ,Electrical resistivity and conductivity ,visual_art ,Materials Chemistry ,visual_art.visual_art_medium ,Isostructural ,0210 nano-technology ,Single crystal - Abstract
Two new one-dimensional coordination polymers (1D CPs) {[Zn(adc)(4-spy)2(H2O)2]}n (1), and {[Cd(adc)(4-spy)2(H2O)2]}n (2) (H2adc = acetylenedicarboxylic acid and 4-spy = 4-styrylpyridine), have been synthesized and well characterized. Single crystal X-ray diffraction data exhibit that compounds 1 and 2 are isostructural and undergo hydrogen bonding and C–H⋯π interactions to construct 3D supramolecular architectures. Electrical characterization reveals that both compounds show substantive electrical conductivity and exhibit Schottky diode nature. However, compound 2 has a higher mobility and higher conductivity compared to 1. The estimated values of effective carrier mobility, transit time, carrier concentration and diffusion length demonstrate that the charge transport properties have been improved for 2. Therefore, compound 2 has better performance in the fabrication of electronic devices.
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- 2018
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23. Cu(<scp>ii</scp>)-Based binuclear compound for the application of photosensitive electronic devices
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Mohammad Hedayetullah Mir, Sakhiul Islam, Chittaranjan Sinha, Faruk Ahmed, Rakesh Purkait, Basudeb Dutta, Arka Dey, Partha Pratim Ray, Soumen Ghosh, and Kaushik Naskar
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Thermogravimetric analysis ,Acetylenedicarboxylic acid ,Infrared ,Chemistry ,Hydrogen bond ,Acetylenedicarboxylate ,Supramolecular chemistry ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Catalysis ,0104 chemical sciences ,chemistry.chemical_compound ,Crystallography ,Materials Chemistry ,0210 nano-technology ,Single crystal ,Powder diffraction - Abstract
In this study, an acetylenedicarboxylate based binuclear Cu(II) compound [Cu2(adc)(4-pic)6(H2O)4][ClO4]2 (1) (H2adc = acetylenedicarboxylic acid and 4-pic = 4-picolene) has been synthesized and well characterized using elemental analysis, infrared (IR) spectra, thermogravimetric analysis (TGA), powder X-ray diffraction (PXRD) patterns and single crystal X-ray diffraction (SCXRD) techniques. The binuclear compound undergoes hydrogen bonding interactions to form a 1D hydrogen bonded aggregate, which further undergoes extensive edge-to-face C–H⋯π interactions to form a 3D supramolecular motif. The current conductivity of compound 1 was recorded under dark and illuminated conditions. Interestingly, the measured I–V characteristics of the synthesized material in the dark and under the illumination of incident light exhibit a highly non-linear rectifying behavior signifying a Schottky diode nature. Furthermore, the enhancement of values of the electrical parameters after exposure to illumination of incident radiation indicates the light sensing behaviour of the material. Therefore, the material can be used as a promising candidate in photosensitive electronic devices.
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- 2018
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24. Experimental and computational investigations of the photosensitive Schottky barrier diode property of an azobenzene based small organic molecule
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Paula Brandão, Saikat Banerjee, Antonio Frontera, Arka Dey, Amrita Saha, Pravat Ghorai, Joaquín Ortega-Castro, and Partha Pratim Ray
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business.industry ,Schottky barrier ,Schottky diode ,Context (language use) ,02 engineering and technology ,General Chemistry ,Dihedral angle ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Optical conductivity ,Catalysis ,Molecular electronic transition ,0104 chemical sciences ,Organic semiconductor ,chemistry.chemical_compound ,Azobenzene ,chemistry ,Materials Chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
Azo based organic semiconductor molecules are mostly used as write once, read-many-times (WORM) memory systems. Therefore, a large scope still remains in the fabrication of photoconducting azo compounds, which can be used under acute conditions for advanced applications. In this context we have designed a very simple, small azo based organic molecule, viz. [1,4-phenylenebis(azanylylidene)bis(methanylylidene)bis(2-methoxy-4-(phenyldiazenyl)phenol)] (compound 1). The device fabricated using compound 1 showed Schottky barrier behavior. The value of the rectification ratio is 6.22 and 18.27 under dark and photoirradiated conditions, respectively. Thermally stable and low cost compound 1 can be used in the area of optoelectronic devices probably being the first azo-organic material showing such properties. Experimentally measured optical conductivity is again correlated theoretically using DFT computation. It has been observed that the change in the dihedral angle produces a decrease in the energy for the allowed electronic transition.
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- 2018
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25. Synthesis and characterization of host–guest inclusion complex of m-cresol with β-cyclodextrin
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Koushik Majhi, Rijia Khatun, Pralay Maiti, Arka Dey, Subrata Sinha, Sourav Jana, Alakananda Hajra, Partha Pratim Ray, and Aparna Wagle Shukla
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m-Cresol ,chemistry.chemical_classification ,Cyclodextrin ,Chemistry ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Fluorescence ,0104 chemical sciences ,Characterization (materials science) ,Photoexcitation ,Crystallography ,chemistry.chemical_compound ,Molecule ,Steady state (chemistry) ,Inclusion (mineral) ,0210 nano-technology ,Food Science - Abstract
The host–guest inclusion complex of meta-cresol (m-cresol, liquid at room temperature, guest molecule) is synthesized with β-cyclodextrin (β-CD, host molecule). The inclusion complex is characterized by various techniques like nuclear magnetic resonance, powder X-ray diffraction, field emission scanning electron microscopy and spectroscopic (steady state as well as time-resolved) techniques. To the best of our knowledge, no literature data is available on the photophysical properties (especially fluorescence upon photoexcitation) of m-cresol in liquid media till date. Our spectroscopic studies exhibit some interesting photophysical properties of m-cresol and its inclusion complex with β-CD in different liquid media. The present work is important in view of the various potential applications of m-cresol in science, technology and medicine.
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- 2017
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26. Application Possibility of Mn0.04Cu0.05Zn0.91O in Electronic and Magnetic Devices
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Somnath Middya, Rajkumar Jana, Mrinmay Das, Partha Pratim Ray, Animesh Layek, Arka Dey, Joydeep Datta, Sudipta Bandyopadhyay, and S.K. Neogi
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010302 applied physics ,Materials science ,Condensed matter physics ,business.industry ,Doping ,Schottky diode ,02 engineering and technology ,Magnetic semiconductor ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,Magnetization ,Semiconductor ,Transition metal ,Ferromagnetism ,0103 physical sciences ,Nanorod ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
In this literature, we have investigated the magnetic properties and Schottky device-based charge transport properties of hydrothermally derived Mn0.04Cu0.05Zn0.91O nanorod. The doping of 3-D transitional metals, Mn and Cu, within ZnO makes it potentially applicable in spin-based electronics, whereas its temperature-dependent conductivity (of the order of 10−3 in C.G.S.) makes it suitable for semiconductor-based devices. The observation of intrinsic ferromagnetism of the synthesized composite and its variation of magnetization with magnetic field and temperature exhibited the suitability of spin-based electronic application. To check the applicability in optoelectronic devices, metal–semiconductor (Al/Mn0.04Cu0.05Zn0.91O) junction was fabricated and analyzed. The current–voltage characteristic represented the rectifying behavior of the junction with on/off current ratio 4.3 at ±1 V in dark and potential barrier height 0.61 eV. The significant change in rectification due to the influence of incident radiation makes this material suitable for photosensing electronic device application.
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- 2017
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27. Investigation of light induced charge transport properties in Dy2NiMnO6 perovskite based Schottky diode
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Partha Pratim Ray, Alo Dutta, Md. Sariful Sheikh, Arka Dey, T.P. Sinha, and Sadhan Chanda
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Materials science ,business.industry ,Oxide ,Schottky diode ,Charge (physics) ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Light induced ,Optoelectronics ,Double perovskite ,Charge carrier ,010306 general physics ,0210 nano-technology ,business ,Transport phenomena ,Perovskite (structure) - Abstract
Here, we have discussed the charge transport phenomena through the interface formed by silver and double perovskite oxide Dy2NiMnO6 (DNMO). The charge carrier transport mechanism in Ag/DNMO junctio...
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- 2017
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28. Network analysis of semiconducting Zn 1-x Cd x S based photosensitive device using impedance spectroscopy and current-voltage measurement
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Mrinmay Das, Joydeep Datta, Arka Dey, Sayantan Sil, Soumi Halder, and Partha Pratim Ray
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Materials science ,business.industry ,Analytical chemistry ,General Physics and Astronomy ,Schottky diode ,02 engineering and technology ,Surfaces and Interfaces ,General Chemistry ,Semiconductor device ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Space charge ,Capacitance ,0104 chemical sciences ,Surfaces, Coatings and Films ,Dielectric spectroscopy ,Compound s ,Semiconductor ,Depletion region ,Optoelectronics ,0210 nano-technology ,business - Abstract
ZnCdS is an intermediate ternary alloy type semiconducting material which has huge tunable structural, optical and electrical properties. Here, we have synthesized Zn 1-x Cd x S compound and characterized its structural, optical and charge transport properties. It is seen that the particle size is greatly influenced by the amount of alloy concentration of cadmium. The performance of semiconductor device such as Schottky diode depends mainly on the charge transportation through the metal-semiconductor junction. So, we have fabricated Al/Zn 1-x Cd x S/ITO device and investigated the bias dependent impedance properties through equivalent circuit network analysis to study the electron lifetime and interfacial region resistance. The result of network analysis indicates that the charge transportation through Al- Zn 0.6 Cd 0.4 S is better than the other fabricated devices. For further explanation, we have studied the capacitance-voltage (C–V) characteristic under dark and current-voltage (I–V) characteristic under dark and light. We have investigated barrier height, depletion layer width and employed SCLC (space charge limited current) theory in I–V characteristics to determine mobility, transit time and diffusion length. The mobility and diffusion length for Zn 0.6 Cd 0.4 S fabricated device are derived as 23.01 m 2 V −1 s −1 and 4.4 μm respectively while both the values are less for the other devices. These values are enhanced upon illumination for all the devices but superiority comes from the Al/Zn 0.6 Cd 0.4 S/ITO device and it leads us to measure the photosensitivity, responsivity, specific detectivity. As expected, the photosensing parameters are enhanced for the Zn 0.6 Cd 0.4 S fabricated device. So, this literature not only explores the metal semiconductor charge transportation using impedance spectroscopy (IS) network analysis and SCLC theory but also explain it from the structural point of view.
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- 2017
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29. Intercatenated Coordination Polymers (ICPs) of Carboxylato Bridged Zn(II)-Isoniazid and Their Electrical Conductivity
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Faruk Ahmed, Basudeb Dutta, Arka Dey, Chandana Sen, Chittaranjan Sinha, Mohammad Hedayetullah Mir, Partha Pratim Roy, and Kaushik Naskar
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Terephthalic acid ,Hydrogen bond ,Inorganic chemistry ,Supramolecular chemistry ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,chemistry.chemical_compound ,Crystallography ,chemistry ,Succinic acid ,Octahedral molecular geometry ,General Materials Science ,Carboxylate ,Isostructural ,0210 nano-technology ,Single crystal - Abstract
Three new coordination polymers (CPs) of coordinated isoniazid (INH) to Zn(II) with succinic acid (H2succ), fumaric acid (H2fum), and terephthalic acid (H2bdc) as organic linker, [Zn(INH)(succ)]n (1), [Zn(INH)(fum)]n (2), and [Zn(INH)(bdc)]n (3), respectively, have been characterized. The structure determination by the single crystal X-ray diffraction technique shows a ZnN2O4 distorted octahedral geometry, and the 1D chain is constituted via the INH and carboxylate coordination along with the hydrogen bonding (N–H···O) which comprises a 2D structure. The CPs, 1 and 2, are isostructural and fabricate supramolecular networks by inclined intercatenation of two 2D layers, while 3 shows parallel intercatenation. The electrical conductivity and Schottky barrier diode behavior have been established by the charge transport mechanism of the compounds at the quasi-Fermi level state. The analysis indicates that the compound 1 has the highest mobility (2.53 × 10 –10 m2 V–1 s–1) than 2 (1.86 × 10–10 m2 V–1 s–1) and 3 ...
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- 2017
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30. Investigation of Ion-Mediated Charge Transport in Methylammonium Lead Iodide Perovskite
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Joydeep Dhar, Sayantan Sil, Arka Dey, Partha Pratim Ray, and Dirtha Sanyal
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chemistry.chemical_classification ,Chemistry ,Inorganic chemistry ,Iodide ,Halide ,02 engineering and technology ,Crystal structure ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Ion ,Crystallinity ,General Energy ,Vacancy defect ,Ionic conductivity ,Physical chemistry ,Physical and Theoretical Chemistry ,0210 nano-technology ,Perovskite (structure) - Abstract
We have investigated the origin of ionic conductivity in methylammonium lead iodide (MAPbI3) by positron annihilation lifetime spectroscopy (PALS), supplemented by coincidence Doppler broadening spectroscopic (CDBS) techniques which reveal the presence of methylammonium (MA+) defects in the perovskite crystal lattice. Crystallinity and the defect concentration vary with the perovskite synthesis process, which in turn governs the magnitude of ionic conductivity. Single-crystalline perovskite contains lesser defects with equal probability of developing both cationic and anionic (halide) vacancies, whereas the polycrystalline perovskite sample developed through mechanical process carries mainly cationic, i.e., MA+ vacancy (V′MA) in its crystal lattice as indicated by direct current (dc) polarization experiment.
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- 2017
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31. Investigation of conduction kinetics in Al/CuInSe2 Schottky device utilizing impedance spectroscopy (IS) measurement and study of its photosensing behaviour
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Arka Dey, Partha Pratim Ray, Sayantan Sil, Joydeep Datta, Animesh Biswas, and Dhananjoy Das
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Materials science ,Equivalent series resistance ,business.industry ,Schottky diode ,chemistry.chemical_element ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Space charge ,0104 chemical sciences ,Dielectric spectroscopy ,Photosensitivity ,chemistry ,Optoelectronics ,General Materials Science ,0210 nano-technology ,business ,Electrical impedance ,Indium ,DC bias - Abstract
Copper Indium Selenide (CuInSe2) has been synthesized by solvothermal synthesis method. The Schottky diode (SD) has been fabricated by using the material and the interface characteristics of Al/CuInSe2/ITO have been investigated with the help of ac impedance spectroscopy (IS) analysis (under dark condition) and dc current-voltage (I–V) measurements (under both dark and photo condition). IS is a very important and powerful technique to investigate and analyze the impedance at the boundary regions of SDs. Ac impedance spectra of Al/CuInSe2 SD have been recorded in the wide range of frequency from 40 Hz to 20 MHz during dc bias scanning from −0.5 V to 0.5 V under dark condition. From forward I–V characteristics, important parameters such as ideality factor (η), photosensitivity, barrier height (Φb), series resistance (RS) of SD were obtained under dark and photo condition. The photosensitivity of the Al/CuInSe2 SD was found to be 3.36. For better realization of charge transport phenomena through the MS junction, space charge limited current (SCLC) theory has been employed. The effective mobility of the carrier is evaluated in dark and photo condition as 0.42 × 10−3 m2V−1s−1 and 2.11 × 10−3 m2V−1s−1 respectively. It has been observed that the mobility is improved 5 times under illumination compared to the dark condition.
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- 2021
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32. Room Temperature Deposited Transparent Conducting InZnO:Ga thin films by Non-Reactive RF-Magnetron Sputtering
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Partha Pratim Ray, Rajesh Das, Arka Dey, and Himadri Sekhar Das
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010302 applied physics ,Materials science ,business.industry ,Analytical chemistry ,02 engineering and technology ,Substrate (electronics) ,Sputter deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,Amorphous solid ,Optics ,Sputtering ,Electrical resistivity and conductivity ,0103 physical sciences ,Surface roughness ,Thin film ,0210 nano-technology ,business ,Sheet resistance - Abstract
Transparent-conducting InZnO:Ga (IZO:Ga) thin films have been developed on glass substrate at room temperature (300K) by nonreactive RF-Magnetron sputtering using sintered ceramic disc of InZnO:Ga target (In-10 wt%, Ga -3wt% and Zn -87wt%). The novelty of very thin IZO:Ga films are low resistivity (1.5×10−3 Ω.cm) and low sheet resistance (20 Ω/□) with average optical transmittance 86%, large Haze factor (>70%) and high figure of merit value (1.1×1018) respectively. RF-sputtered IZO:Ga films shows amorphous nature, smooth and crack-free surface morphology and topography with predominant metallic phase. Heat treated samples becomes crystalline, topography becomes more aligned (U-type) and surface roughness increases.
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- 2017
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33. A Cd(<scp>ii</scp>)-based MOF as a photosensitive Schottky diode: experimental and theoretical studies
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Partha Roy, Arka Dey, Antonio Frontera, Aradhita Bhattacharjee, Shibashis Halder, Joaquín Ortega-Castro, and Partha Pratim Ray
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Diffraction ,Materials science ,business.industry ,Analytical chemistry ,Schottky diode ,02 engineering and technology ,Conductivity ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Thermal conduction ,01 natural sciences ,Ray ,Molecular electronic transition ,0104 chemical sciences ,Inorganic Chemistry ,Optoelectronics ,Irradiation ,0210 nano-technology ,business ,Single crystal - Abstract
A Cd(II) based 2D metal–organic framework (MOF), [Cd(4-bpd)(SCN)2]n (1) where 4-bpd = 1,4-bis(4-pyridyl)-2,3-diaza-1,3-butadiene, has been synthesized and characterized by standard methods including single crystal X-ray diffraction analysis. When it is sandwiched between ITO coated glass and Al, 1 shows interesting conduction properties. The I–V characteristics of the ITO/1/Al configuration measured in the dark and under illumination of incident light exhibit a highly non-linear rectifying behavior, which signifies its Schottky diode character. The conductivity of the configuration is 2.90 × 10−4 S m−1 and 7.16 × 10−4 S m−1 under dark and photoirradiation conditions, respectively. Different parameters have been analyzed and these indicate that 1 can be a promising candidate for light sensing electronic devices. This material has good sensitivity to the light source when switched on/off. Theoretical calculations have been performed to understand the reason for the enhancement of conductivity under illumination of incident light. It has been found that upon irradiation, slight changes in the bond distances of 4-bpd in 1 occur. These changes are related to the considerable decrease in the energy needed for the allowed electronic transition. This may influence the increase of conductivity along with other factors.
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- 2017
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34. Irradiation Specified Conformational Change in a Small Organic Compound and Its Effect on Electrical Properties
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Arka Dey, Antonio Frontera, Partha Pratim Ray, Shibashis Halder, Partha Roy, and Joaquín Ortega-Castro
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Biasing ,02 engineering and technology ,Dihedral angle ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Photochemistry ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,Wavelength ,General Energy ,chemistry ,Photosensitivity ,Irradiation ,Physical and Theoretical Chemistry ,Electric current ,Methylene ,0210 nano-technology ,Visible spectrum - Abstract
The simple and small organic compound bis((quinolin-4-yl)methylene)benzene-1,4-diamine (BQD) has been synthesized by a one-step Schiff-base condensation reaction, and it has been characterized by elemental analysis, some standard spectroscopic methods, and the X-ray single crystal diffraction technique. It shows the unique property of photosensitivity with about 10 times increase in electrical conduction under irradiation of visible light of a specific wavelength (700 nm), in comparison to dark conditions. However, UV light (350 nm) or visible light of different wavelength (500 or 600 nm) cannot cause an enhancement in its electrical conduction. The electric current measurement of BQD exhibits its response ability toward visible light but not to UV illumination when current is measured several times under a constant bias voltage by putting light on and off with successive repetitions. Theoretical calculations indicate that a slight conformational change in the C═N bond and dihedral angle leading to the in...
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- 2016
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35. Growth of hierarchical strontium incorporated cadmium sulphide for possible application in optical and electronic devices
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Joydeep Datta, Somnath Middya, Partha Pratim Ray, Mrinmay Das, Arka Dey, Animesh Layek, and Rajkumar Jana
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Materials science ,business.industry ,Photoconductivity ,Biasing ,02 engineering and technology ,Dielectric ,Photon energy ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Optical conductivity ,Atomic and Molecular Physics, and Optics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Wavelength ,Optics ,Optoelectronics ,Charge carrier ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Refractive index - Abstract
In this work, we have incorporated strontium (Sr) into cadmium sulphide (CdS) complex to explore its effect on optical and electrical properties. In this regard Sr composited CdS and a bared CdS were prepared by hydrothermal technique. X-ray diffraction pattern of the materials were analyzed to obtain their crystalline structure, size and internal lattice strain. The compositional details were obtained from SEM-EDAX study. The optical properties of the films of synthesized materials were analyzed. The dependency of refractive index on incident photon energy was studied in detail for each material. The dispersion energy related parameters, dielectric relaxation constant and optical conductivity followed by dispersion of the refractive index were determined and discussed by employing the single electronic oscillator model. From wavelength dependent refractive index data, the plasma frequency, ratio of free charge carrier concentration to effective mass, lattice dielectric constant and high frequency dielectric constant were calculated to determine the discrepancy of the compounds. The third order optical susceptibility was analyzed to check their potential ability of performance in optical limiter and optical switching device application. The electrical characterization was performed by measuring the current–voltage characteristics of structure ITO/CdS:Sr/Al and ITO/CdS/Al. The rectifying I–V showed improved On/Off ratio under dark (25.03 and 19.98) and light (35.51 and 25.09) for ITO/CdS:Sr/Al compared to ITO/CdS/Al. The dark and photoconductivity of the film were also determined for both the films. The time dependent current response was analyzed at constant bias voltage ±1 V.
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- 2016
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36. Development of a new Schiff-base semiconducting material for thin film active device and analysis of its charge transport mechanism
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Mrinmay Das, Partha Pratim Ray, Arka Dey, Bibhutibhushan Show, Partha Pratim Roy, Shibashis Halder, and Koushik Ghosh
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Materials science ,business.industry ,Band gap ,Mechanical Engineering ,Fermi level ,Schottky diode ,02 engineering and technology ,Semiconductor device ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Metal–semiconductor junction ,01 natural sciences ,0104 chemical sciences ,symbols.namesake ,Mechanics of Materials ,Density of states ,symbols ,Optoelectronics ,General Materials Science ,Thin film ,0210 nano-technology ,business ,Diode - Abstract
Schiff-base compounds have rarely been employed in optoelectronics. Herein, we report the optical and electrical properties of a Schiff-base compound, 1,4-bis-(quinolin-6-yl iminomethyl)benzene (BQB), in detail. The electrical properties of BQB have been studied with a thin film made of it. The results of electrical conductivity and measurement of optical band gap of BQB encouraged us to examine its potential application in metal (Al)-semiconductor Schottky diode. I–V measurement of ITO/BQB/Al configuration illustrated its Schottky behavior with a moderate rectification ratio at applied bias potential of ±1.0 V. The characteristic diode parameters were obtained. The device showed a good ideality factor of 1.2 and low barrier height of 0.44 eV. Charge transport properties through the metal semiconductor junction, which is critical for device performance, were analyzed by space charge-limited current theory. In this regard, mobility–lifetime product, carrier density, density of states at Fermi level and diffusion length was estimated. The results show that this new Schiff-base compound has the potential for successful application in thin film semiconductor device.
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- 2016
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37. Development of large area nanostructured silicon-hydrogen alloy material with improved stability for solar cell application by argon dilution method
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Partha Pratim Ray, Mrinmay Das, Rajkumar Jana, Sayantan Sil, Joydeep Datta, Debasish Biswas, Arka Dey, Chandan Banerjee, and Joydeep Dhar
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Materials science ,genetic structures ,Hydrogen ,Silicon ,Physics::Instrumentation and Detectors ,Diffusion ,Alloy ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,engineering.material ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Solar cell ,Physics::Atomic and Molecular Clusters ,Deposition (law) ,010302 applied physics ,Argon ,integumentary system ,food and beverages ,021001 nanoscience & nanotechnology ,eye diseases ,Electronic, Optical and Magnetic Materials ,Dilution ,chemistry ,engineering ,sense organs ,0210 nano-technology - Abstract
Here we have presented the results of large area (30 × 30 cm2) silicon-hydrogen alloy material and solar cell by argon dilution method. As an alternative to hydrogen dilution, argon dilution method has been applied to develop single junction solar cell with appreciable stability. Optimization of deposition conditions revealed that 95% argon dilution gives a nanostructured material with improved transport property and less light induced degradation. The minority carrier diffusion length (Ld) and mobility-lifetime (μτ) product of the material with 95% argon dilution degrades least after light soaking. Also the density of states (DOS) below conduction level reveals that this material is less defective. Solar cell with this argon diluted material has been fabricated with all the layers deposited by argon dilution method. Finally we have compared the argon diluted solar cell results with the optimized hydrogen diluted solar cell. Light soaking study proves that it is possible to develop stable solar cell on large area by argon dilution method and that the degradation of argon diluted solar cell is less than that of hydrogen diluted one.
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- 2016
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38. Investigation of Light Induced Carrier Transport Phenomena Through ZnCdS Nanocomposite Based Schottky Diode
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Joydeep Datta, Arka Dey, Mrinmay Das, Partha Pratim Ray, Somnath Middya, Animesh Layek, and Rajkumar Jana
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Nanocomposite ,Materials science ,Solid-state physics ,business.industry ,Band gap ,chemistry.chemical_element ,Schottky diode ,Thermionic emission ,02 engineering and technology ,Conductivity ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,chemistry ,Aluminium ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business ,Transport phenomena - Abstract
Here, we have discussed the electron transport phenomena through the interface formed by aluminium and hydrothermally synthesized Zinc-Cadmium-Sulphide (ZnCdS) nanocomposite. In this background, the structural, optical, and electrical characterization of the synthesized material were studied. The estimated optical band gap energy (=3.14 eV) and the room temperature conductivity (1.6 × 10−6 S cm−1) of the synthesized nanomaterial motivated us to explore the metal/inorganic-semiconductor interface. The carrier transport mechanism under dark and light-illuminated conditions was analyzed by the thermionic emission theory of the metal–semiconductor junction. Significant changes in rectification ratio, barrier potential, and the ideality factor were observed under light irradiance. The effect of incident radiation on mobility-lifetime (μτ) product and the diffusion length (L D) was demonstrated for the device.
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- 2016
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39. Structures, photoresponse properties and DNA binding abilities of 4-(4-pyridinyl)-2-pyridone salts
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Arka Dey, Joaquín Ortega-Castro, Sudipta Pathak, Saugata Konar, Subrata Mukhopadhyay, Partha Pratim Ray, Md. Maidul Islam, Saikat Kumar Seth, Antonio Frontera, and Tripti Mandal
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chemistry.chemical_classification ,Tetrafluoroborate ,General Chemical Engineering ,02 engineering and technology ,General Chemistry ,Crystal structure ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Organic compound ,Chloride ,0104 chemical sciences ,2-Pyridone ,chemistry.chemical_compound ,Perchlorate ,Crystallography ,chemistry ,medicine ,Non-covalent interactions ,0210 nano-technology ,Single crystal ,medicine.drug - Abstract
Three salts [perchlorate (2), chloride (3) and tetrafluoroborate (4)] were synthesized from a 1-(2-aminoethyl)-6-hydroxy-2-oxo-1,2-dihydro-[4,4-bipyridine]-3,5-dicarbonitrile compound (1) and characterized by spectroscopic and single crystal X-ray diffraction methods. Various noncovalent interactions (e.g., anion(+), , lp) are explored in the solid state crystal structure of the salts. Optical band gaps of all the four compounds were determined from their solid-state UV-vis spectrum. Electrical properties like electrical conductivity, photosensitivity, etc. were calculated and the results revealed that they have potential to act as optoelectronic devices. The values of the electrical parameters increase several times when they are exposed to visible light rather than in dark conditions. The light sensing properties of the salts (2-4) are enhanced compared to that of the mother organic compound 1 but the magnitude of this enhancement is not same for the three salts. This observation has been rationalized by theoretical considerations. Moreover, the DNA binding ability of one of the representative salts (compound 2) was examined to check the biological importance of the synthesized salts., TM thankfully acknowledges the UGC, New Delhi for a senior research fellowship. We thank the MINECO/AEI from Spain for financial support (project number CTQ2017-85821-R, FEDER funds). We are grateful to the CTI (UIB) for free allocation of computer time.
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- 2019
40. Multifunctional mixed ligand metal organic frameworks: X-ray structure, adsorption, luminescence and electrical conductivity with theoretical correlation
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Sk Jahiruddin, Arka Dey, Debajyoti Ghoshal, Partha Pratim Ray, Chandra Chowdhury, Ayan Datta, Arijit Halder, Animesh Layek, Dilip K. Maity, Biswajit Bhattacharya, and Saheli Ghosh
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business.industry ,Chemistry ,Inorganic chemistry ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Indium tin oxide ,Adsorption ,Semiconductor ,Physical chemistry ,Molecule ,General Materials Science ,Metal-organic framework ,0210 nano-technology ,Luminescence ,business ,Single crystal ,Powder diffraction - Abstract
Two new mixed ligand metal–organic frameworks of Zn(II) with disodium 5-hydroxyisophthalate and 4,4′-azobispyridine (azbpy) ligands, {[Zn(azbpy)(HO-1,3-bdc)(H2O)]·(azbpy)}n (1) and {[Zn(azbpy)0.5(HO-1,3-bdc)(C2H5OH)]·(H2O)}n (2) have been synthesized by changing the reaction medium (methanol to ethanol) and structurally characterized by elemental analysis, IR, PXRD, TG and single crystal X-ray diffraction. Compound 1 exhibits a 2D sheet network structure with free azbpy ligands in its void space, and is stabilized by π–π and C–H⋯π interactions, whereas 2 has a 2D layered architecture with lattice water molecules in its void space. Compound 2 has a flexible structure and shows gated adsorption (gas and solvent) behavior, while framework 1 is nonporous. These two MOFs exhibit remarkable electrical conductivity values at room temperature and their comparison is discussed carefully. Theoretical calculations suggest that both the compounds are p-type semiconductors and correlate the structure–property relationship. Schottky barrier diode electronic devices have been fabricated by using these two semiconductor materials with aluminium (Al) and indium tin oxide (ITO) in sandwich configuration, ITO/MOF-1 or 2/Al, and both the devices exhibit sound rectification behavior. The photoluminescent properties of both the compounds in the solid state are also investigated in detail.
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- 2016
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41. The development of a promising photosensitive Schottky barrier diode using a novel Cd(ii) based coordination polymer
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Arka Dey, Antonio Frontera, Antonio Bauzá, Partha Pratim Ray, Amrita Saha, Paula Brandão, Pravat Ghorai, and Joaquín Ortega-Castro
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Schiff base ,Materials science ,business.industry ,Coordination polymer ,Schottky diode ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Cyanate ,01 natural sciences ,0104 chemical sciences ,Ion ,Inorganic Chemistry ,chemistry.chemical_compound ,Photosensitivity ,chemistry ,Electrical resistivity and conductivity ,Optoelectronics ,0210 nano-technology ,business ,Visible spectrum - Abstract
A novel 1D Cd(II) based coordination polymer (complex 1) has been synthesized involving an 8-aminoquinoline based Schiff base ligand and cyanate ion. It has been characterized by elemental analysis, different spectroscopy methods and X-ray single crystal diffraction technique. Most interestingly it exhibits unique properties like electrical conductivity and photosensitivity which shows its potential in optoelectronic device application. We prove both experimentally and theoretically that electrical conduction under irradiation of visible light increases many fold in comparison with that under dark condition. Our synthesized material based device shows some paramount behaviour under irradiance of light which is obvious in light sensing Schottky devices. The rectification ratio of our complex based device was found to be 12.44 and 27.74 under dark and photoirradiation conditions respectively. The discovery of such type of coordination polymer advances the area of optoelectronic devices.
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- 2017
42. Positron Annihilation Spectroscopic Investigation on the Origin of Temperature-Dependent Electrical Response in Methylammonium Lead Iodide Perovskite
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Dirtha Sanyal, Arka Dey, Joydeep Dhar, Sayantan Sil, and Partha Pratim Ray
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chemistry.chemical_classification ,Structural phase ,Iodide ,Cationic polymerization ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Positron annihilation spectroscopy ,chemistry ,Chemical physics ,Ionic conductivity ,General Materials Science ,Physical and Theoretical Chemistry ,0210 nano-technology ,Nuclear chemistry ,Perovskite (structure) ,Positron annihilation ,Doppler broadening - Abstract
Organic–inorganic hybrid perovskite has appeared as one of the leading materials for realizing solution-based high-performing optoelectronic devices. The charge transport properties in this class of material are quite intriguing and still need to be carefully investigated. The temperature-dependent electrical property of methylammonium lead iodide (CH3NH3PbI3) has been investigated by employing positron annihilation spectroscopy (PAS), which unambiguously reveals the gradual formation of open volume defects with the enhancement in temperature. The high-temperature ionic conductivity is due to the generation of both cationic (CH3NH3+) and anionic (I–) vacancies, possibly because of the elimination of methylammonium iodide (CH3NH3I) as identified from the coincidence Doppler broadening (CDB) of the positron annihilation spectroscopy. Further, the evolution of temperature-dependent defect density and corresponding electrical responses has been correlated with the structural phase transitions of CH3NH3PbI3. T...
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- 2017
43. Effect of graphene on improved photosensitivity of MoS2-graphene composite based Schottky diode
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Sayantan Sil, Animesh Biswas, Arka Dey, Pubali Das, Baishakhi Pal, Partha Pratim Ray, and Soumi Halder
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Materials science ,Equivalent series resistance ,Graphene ,business.industry ,Mechanical Engineering ,Composite number ,Schottky diode ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,law.invention ,Rectification ,Photosensitivity ,Mechanics of Materials ,law ,Optoelectronics ,General Materials Science ,Thin film ,0210 nano-technology ,business ,Diode - Abstract
In this work, MoS2 and MoS2-Graphene (MGC) composite have been synthesized by hydrothermal process followed by their structural, optical and electrical characterization. The current density-voltage measurements have been performed at room temperature by fabricating Al/MoS2 and/or MGC/ITO configured sandwich structured metal-semiconductor (MS) thin film Schottky devices. Under light and dark conditions, various parameters of our synthesized material based devices like rectification ratio, series resistance, barrier height, etc. have been measured and compared between the two. All the measured electrical properties show improvement for the composite based diodes, noteworthy the photosensitivity which has been increased by almost 33 times, signifying its potential application in photosensitive devices.
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- 2019
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44. Analysis of temperature dependent electrical performance of Al/CuO/ITO Schottky barrier diode and explanation of inhomogeneous barrier heights by double Gaussian distribution
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Rajkumar Jana, Sayantan Sil, Joydeep Datta, Arka Dey, and Partha Pratim Ray
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Materials science ,Schottky barrier ,Gaussian ,Analytical chemistry ,General Physics and Astronomy ,Schottky diode ,02 engineering and technology ,SBDS ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,lcsh:QC1-999 ,Standard deviation ,Hydrothermal circulation ,0104 chemical sciences ,symbols.namesake ,Distribution (mathematics) ,symbols ,0210 nano-technology ,lcsh:Physics ,Diode - Abstract
Here temperature dependent electrical properties of two differently synthesized CuO nanoparticles (hydrothermal (CuO (H)) and reflux (CuO (R))) based Schottky barrier diodes (SBDs) have been investigated. Both the materials based devices show an abnormal decrease in the ideality factor (η) and an increase in the barrier height (BH) with the increase in temperature. Experimentally obtained Richardson constant (A*) for both materials based devices show much lower values than the theoretical values. This discrepancy in A* due to the presence of inhomogeneities at the barrier height (BH) of metal-semiconductor (MS) interface has been analyzed by assuming double Gaussian distribution (GD) of the BHs.The mean BH values (ϕb0¯) for CuO (H) based devices obtained as 1.18eV and 1.07eV with standard deviation 0.18V and 0.15 V respectively which are less than the values of its counterpart. The obtained values of A* from the modified plot for both SBDs are in close agreement with the theoretical values. This study portrays a successful explanation of temperature dependent current-voltage characteristics of these two SBDs assuming double GD of the BHs.Here temperature dependent electrical properties of two differently synthesized CuO nanoparticles (hydrothermal (CuO (H)) and reflux (CuO (R))) based Schottky barrier diodes (SBDs) have been investigated. Both the materials based devices show an abnormal decrease in the ideality factor (η) and an increase in the barrier height (BH) with the increase in temperature. Experimentally obtained Richardson constant (A*) for both materials based devices show much lower values than the theoretical values. This discrepancy in A* due to the presence of inhomogeneities at the barrier height (BH) of metal-semiconductor (MS) interface has been analyzed by assuming double Gaussian distribution (GD) of the BHs.The mean BH values (ϕb0¯) for CuO (H) based devices obtained as 1.18eV and 1.07eV with standard deviation 0.18V and 0.15 V respectively which are less than the values of its counterpart. The obtained values of A* from the modified plot for both SBDs are in close agreement with the theoretical values. This study por...
- Published
- 2018
- Full Text
- View/download PDF
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