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Two-dimensional electron gases (2DEGs) are at the base of current nanoelectronics because of their exceptional mobilities. Often the accumulation layer forms at polar interfaces with longitudinal optical (LO) modes. In most cases, the many-body screening of the quasi-2DEGs dramatically reduces the Fröhlich scattering strength. Despite the effectiveness of such a process, it has been recurrently proposed that a remote coupling with LO phonons persists even at high carrier concentration. We address this issue by perturbing electrons in an accumulation layer via an ultrafast laser pulse and monitoring their relaxation via time- and momentum-resolved spectroscopy. The cooling rate of excited carriers is monitored at doping level spanning from the semiconducting to the metallic limit. We observe that screening of LO phonons is not as efficient as it would be in a strictly 2D system. The large discrepancy is due to the remote coupling of confined states with the bulk. Our data indicate that the effect of such a remote coupling can be mimicked by a 3D Fröhlich interaction with Thomas–Fermi screening. These conclusions are very general and should apply to field effect transistors (FET) with high- [Formula: see text] dielectric gates, van der Waals heterostructures, and metallic interfaces between insulating oxides.

The paper presents the case study of the complete 3D survey of the area of the Fort of Pietole in Borgo Virgilio using the Leica Pegasus Backpack wearable Mobile Mapping System (MMS). Surveying the site is challenging because of its complex topology on the one hand (with notably narrow passages) and because of the presence of vegetation on the other. The framework within which this research takes place is the Fort of Pietole survey project that aims at the extraction of the Digital Terrain Model (DTM) of the area and the georeferencing of the fort defensive structures. The requirement of the project is the 3D reconstruction of the whole area at an accuracy that stands between a big scale environmental survey and a small-scale architectonic survey (1 : 500). The project is the opportunity to discuss the state of the art of wearable MMS, and to test the versatility and accuracy outcomes of the Pegasus Backpack under varying and challenging condition (indoor-outdoor, even-uneven pavement, satellite covered-denied areas) with the ambitious goal to use only the backpack MMS to record all the data from the DTM to the indoor narrow structures.

Ultrafast scattering process of high-energy carriers plays a key role in the performance of electronics and optoelectronics, and have been studied in several semiconductors. Core-hole clock spectroscopy is a unique technique for providing ultrafast charge transfer information with sub-femtosecond timescale. Here we demonstrate that germanium selenide (GeSe) semiconductor exhibits electronic states-dependent charge delocalization time by resonant photo exciting the core electrons to different final states using hard-x-ray photoemission spectroscopy. Thanks to the experiment geometry and the different orbital polarizations in the conduction band, the delocalization time of electron in high energy electronic state probed from Se 1s is ~470 as, which is three times longer than the delocalization time of electrons located in lower energy electronic state probed from Ge 1s. Our demonstration in GeSe offers an opportunity to precisely distinguish the energy-dependent dynamics in layered semiconductor, and will pave the way to design the ultrafast devices in the future. The ability to gather experimental access to the kinetics of charge carriers is central in semiconductor physics. The authors utilize hard x-ray radiation from a synchrotron source to probe the charge transfer dynamics in the attosecond regime in layered GeSe, thus providing crucial information for future photonic and optoelectronic devices.

International audience; Terahertz (THz) spin-to-charge conversion has become an increasingly important process for THz pulse generation and as a tool to probe ultrafast spin interactions at magnetic interfaces. However, its relation to traditional, steady state, ferromagnetic resonance techniques is poorly understood. Here we investigate nanometric trilayers of Co/X/Pt (X=Ti, Au or Au0:85W0:15) as a function of the 'X' layer thickness, where THz emission generated by the inverse spin Hall effect is compared to the Gilbert damping of the ferromagnetic resonance. Through the insertion of the 'X' layer we show that the ultrafast spin current injected in the non-magnetic layer defines a direct spin conductance, whereas the Gilbert damping leads to an effective spin mixing-conductance of the trilayer. Importantly, we show that these two parameters are connected to each other and that spinmemory losses can be modeled via an effective Hamiltonian with Rashba fields. This work highlights that magneto-circuits concepts can be successfully extended to ultrafast spintronic devices, as well as enhancing the understanding of spin-to-charge conversion processes through the complementarity between ultrafast THz spectroscopy and steady state techniques.

This study is part of the “Milan Cathedral Survey project”. It is a three years long research project with the aim of surveying the entire cathedral in 3D with different techniques (mainly photogrammetry and laser scanning). The goal is to renew the architectonic drawings (sections elevations and plans) to obtain new updated and certificated measurements of the cathedral, as requested by Veneranda Fabbrica del Duomo, and to produce the basis on which to build a future 3D BIM (Building Information Model) system implementation. In this paper, we would like to examine in depth the survey process of the exterior elevations of the cathedral carried out using photogrammetry as the main survey technique for orthophotos production. The case studies here presented have the goal of underlying challenges, discussing decisions and approaches, describing the followed pipeline and of defining a standard method that can be followed to produce gigapixel orthophotos of complex cultural heritages.

Narrow spaces and passages are not a rare encounter in cultural heritage, the shape and extension of those areas place a serious challenge on any techniques one may choose to survey their 3D geometry. Especially on techniques that make use of stationary instrumentation like terrestrial laser scanning. The ratio between space extension and cross section width of many corridors and staircases can easily lead to distortions/drift of the 3D reconstruction because of the problem of propagation of uncertainty. This paper investigates the use of fisheye photogrammetry to produce the 3D reconstruction of such spaces and presents some tests to contain the degree of freedom of the photogrammetric network, thereby containing the drift of long data set as well. The idea is that of employing a multi-camera system composed of several fisheye cameras and to implement distances and relative orientation constraints, as well as the pre-calibration of the internal parameters for each camera, within the bundle adjustment. For the beginning of this investigation, we used the NCTech iSTAR panoramic camera as a rigid multi-camera system. The case study of the Amedeo Spire of the Milan Cathedral, that encloses a spiral staircase, is the stage for all the tests. Comparisons have been made between the results obtained with the multi-camera configuration, the auto-stitched equirectangular images and a data set obtained with a monocular fisheye configuration using a full frame DSLR. Results show improved accuracy, down to millimetres, using a rigidly constrained multi-camera.

Quadruple cation mixed halide perovskite, GA0.015Cs0.046MA0.152FA0.787Pb(I0.815Br0.185)3, single crystals were grown for the first time using an inverse temperature crystallization process. Solar cell devices in n-i-p stack configuration using thin films of the same materials showed power conversion efficiency above 20%. Complementary time-resolved spectroscopy confirmed that polycrystalline thin films and single crystals identically composed exhibit similar carrier dynamics in the picosecond range. Cooling of excited carriers and bandgap renormalization occur on the same time scale of 200–300 fs. The radiative recombination coefficient (1.2 × 10–9 cm3/s) is comparable to values reported for a GaAs semiconductor. At low excitation density, a long carrier lifetime of 3.2 μs was recorded possibly due to the passivation of recombination centers. This study clarifies discrepancies about the lifetime of hot carriers, the impact of radiative recombination, and the role of recombination centers on solar cell performance. The quadruple cation perovskites displayed short time dynamics with slow recombination of charge carriers. acceptedVersion

Modern technology offers elaborated and efficient instruments capable of performing extremely accurate surveys of architectural and archaeological remains. However, not all of them can be used everywhere: archaeological missions might be constrained by logistics, environmental and, especially, financial restrictions. This issue is especially felt by archaeological missions currently operating in the Middle East and Africa. The research team of the ERC project LIFE (CoGrant 681673) has been successfully experimenting with the use of low-cost instruments to achieve equally accurate results.

International audience; Electrostatic gating or alkali metal evaporation can be successfully employed to tune the interface of layered black phosphorus (BP) from a semiconductor to a 2D Dirac semimetal. Although Angle Resolved Photoelectron Spectroscopy (ARPES) experiments have captured the collapse of the band gap in the inversion layer, a quantitative estimation of band structure evolution has been hindered by the short escape depth and matrix elements of the probed photoelectrons. Here, we precisely monitor the evolution of electronic states using time-resolved ARPES at a photon energy of 6.3 eV. The probing depth of laser-based ARPES is long enough to observe the buried electronic states originating from the valence band maximum. Our data shows that the band gap has a maximal value of 0.32 eV in the pristine sample, and that it shrinks down monotonically by increasing the carrier concentration in the topmost layer. Most interestingly, the band velocity of the valence band increases by a factor of two along the armchair direction, surpassing the value reported in graphene on silicon carbide (SiC). This control of band structure via external gating will be of interest with regard to the design of optoelectronic devices.

Manipulation of intrinsic electronic structures by electron or hole doping in a controlled manner in van der Waals layered materials is the key to control their electrical and optical properties. Two-dimensional indium selenide (InSe) semiconductor has attracted attention due to its direct band gap and ultrahigh mobility as a promising material for optoelectronic devices. In this work, we manipulate the electronic structure of InSe by in situ surface electron doping and obtain a significant band gap renormalization of ∼120 meV directly observed by high-resolution angle resolved photoemission spectroscopy. This moderate doping level (carrier concentration of 8.1 × 1012 cm-2) can be achieved by electrical gating in field effect transistors, demonstrating the potential to design of broad spectral response devices.

International audience; Replying to D. Moreno-Mencía et al. Nature Communicationshttps://doi.org/10.1038/s41467-019-11743-3 (2019).

This work starts from the request to have a physical high-resolution 3D model of the external, anthropoid coffin of the scribe Butehamon, held at the Museo Egizio, Turin. At the time of writing, a replica of the coffin, based on this survey work, functions as final and focal installation of the temporary exhibition Archeologia Invisibile of the Museo Egizio, Turin, running from March 2019 to January 2020. The replica acts as support for a micro-mapping installation meant to re-project a pattern of images onto the coffin’s surface, including the results of different radiometric and colourimetric analyses performed in the recent past by Museo Egizio and Musei Vaticani. This collaborative work encouraged a thorough discussion on the interaction between scientists and humanists engaged in the study of archaeological finds, on the needs and expectations of both sides, and on the technical problems relating to handling objects of different sizes.

International audience; Hybrid heterostructures, made of organic molecules adsorbed on two-dimensional metal monochalcogenide, generally unveil interfacial effects that improve the electronic properties of the single constitutive layers. Here, we investigate the interfacial electronic characteristics of the F4-TCNQ/single-layer GaSe heterostructure. A sharp F4-TCNQ/GaSe interface has been obtained and characterized by x-ray photoemission spectroscopy. We demonstrate that a high electron transfer from 1TL GaSe into the adsorbed F4-TCNQ molecules takes place, thereby yielding a reduction in the excess negative charge density of GaSe. Additionally, the direct band-structure determination of the heterostructure has been carried out using angle-resolved photoemission spectroscopy, shedding light on essential features such as doping and band offset at the interface. Our results indicate that the buried 1TL GaSe below the F4-TCNQ layer exhibits a robust inversion of the valence dispersion at the Γ point, forming a Mexican-hat-shaped dispersion with 120 ± 10 meV of depth. Our experiments also reveal that F4-TCNQ can significantly tune the electronic properties of 1TL GaSe by shifting the band offset of about 0.16 eV toward lower binding energies with respect to the Fermi level, which is a key feature for envisioning its applications in nanoelectronics.

International audience; The rapid development of the computational methods based on density functional theory, on the one hand, and of the time-energy-and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot electron relaxation dynamics, and, in particular, into the role of the electron-phonon coupling [1]. Recently, we have developed a computational method, based on density functional theory and on interpolation of the electron-phonon matrix elements in Wannier space, for the calculation of the electron-phonon coupling in polar materials [2]. This method allowed us to successfully interpret the dynamics of hot electron relaxation in bulk GaAs, in excellent agreement with time-and angle-resolved photoemission experiments. We have demonstrated, for the relaxation of hot carriers in GaAs, the existence of two distinct relaxation regimes, one related with the momentum, and the other with energy relaxation [3]. Interestingly, the energy relaxation times become faster at lower energies [4]. In this work, we will present our new results, both experimental and theoretical, on hot electron relaxation in silicon. Numerous additional experiments were performed with respect to the work of [5], and a new interpretation of the measured relaxation times is provided, based on our ab initio calculations and on the concept of hot electron ensembles proposed recently in [3]. Moreover, we will present our recent results, both experimental and theoretical, on the hot electron relaxation and cooling in InSe. InSe is a quasi-2D material which was shown recently to have potential interest for optoelectronics [6]. In this work, we will discuss our new results on the relaxation and cooling dynamics in doped InSe.

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic

International audience; One of the most important challenges in the study of topological insulators is the realization of materials that are really insulating in the bulk, in order to emphasize quantum transport in the protected surface states. Irradiation with electron beams is a very promising approach toward this goal. By studying a series of samples of the prototype 3D topological insulator Bi 2 Te 3 , we show that while the topological properties of Dirac surface states are preserved after electron irradiation, their relaxation dynamics are very sensitive to the related modifications of the bulk properties. Using time-and angle-resolved photoelectron spectroscopy, we can reveal two distinct relaxation regimes after optical excitation for non-irradiated and irradiated samples. While the faster regime, corresponding to the first few picoseconds, presents a similar temporal evolution of the photoexcited population for all studied samples, the slower regime is strongly influenced by the controlled generation of defects in the bulk lattice. By adjusting the irradiation parameters in this class of materials, one can thus not only change the bulk transport properties but also tune the ultrafast response of the topological surface states.

International audience; We investigate black phosphorus by time- and angle-resolved photoelectron spectroscopy. The electrons excited by 1.57 eV photons relax down to a conduction band minimum within 1 ps. Despite the low band gap value, no relevant amount of carrier multiplication could be detected at an excitation density 3–6 × 1019 cm–3. In the thermalized state, the band gap renormalization is negligible up to a photoexcitation density that fills the conduction band by 150 meV. Astonishingly, a Stark broadening of the valence band takes place at an early delay time. We argue that electrons and holes with a high excess energy lead to inhomogeneous screening of near surface fields. As a consequence, the chemical potential is no longer pinned in a narrow impurity band.

Using femtosecond time- and angle-resolved photoemission spectroscopy, we explore the out-of-equilibrium dynamics of surface fermions in the topological system ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{2}\mathrm{Se}$. We show that the presence of localized states from defects at the surface is one of the key material parameters undergirding the long relaxation time of photoexcited Dirac electrons lying in the projected band gap of the bulk-insulating pristine compound. Doping this ternary compound with Sn substituting on Bi sites, while desirably increasing the resistivity at low temperatures decreases decay times of the excited homologous Dirac electrons. On the basis of these observations, we argue that long relaxation times can be ultimately controlled by a charge transfer to the surface.

International audience; The rapid development of the computational methods based on density functional theory, on the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other hand, allows today an unprecedently detailed insight into the processes governing hot-electron relaxation dynamics, and, in particular, into the role of the electron–phonon coupling. Instead of focusing on the development of a particular method, theoretical or experimental, this review aims to treat the progress in the understanding of the electron–phonon coupling which can be gained from both, on the basis of recently obtained results.We start by defining several regimes of hot electron relaxation via electron–phonon coupling, with respect to the electron excitation energy. We distinguish between energy and momentum relaxation of hot electrons, and summarize, for several semiconductors of the IV and III–V groups, the orders of magnitude of different relaxation times in different regimes, on the basis of known experimental and numerical data. Momentum relaxation times of hot electrons become very short around 1 eV above the bottom of the conduction band, and such ultrafast relaxation mechanisms are measurable only in the most recent pump-probe experiments.Then, we give an overview of the recent progress in the experimental techniques allowing to obtain detailed information on the hot-electron relaxation dynamics, with the main focus on time-, energy-, and momentum-resolved photoemission experiments. The particularities of the experimental approach developed by one of us, which allows to capture time-, energy-, and momentum-resolved hot-electron distributions, as well as to measure momentum relaxation times of the order of 10 fs, are discussed.We further discuss the main advances in the calculation of the electron–phonon scattering times from first principles over the past ten years, in semiconducting materials. Ab initio techniques and efficient interpolation methods provide the possibility to calculate electron–phonon scattering times with high precision at reasonable numerical cost. We highlight the methods of analysis of the obtained numerical results, which allow to give insight into the details of the electron–phonon scattering mechanisms.Finally, we discuss the concept of hot electron ensemble which has been proposed recently to describe the hot-electron relaxation dynamics in GaAs, the applicability of this concept to other materials, and its limitations. We also mention some open problems.

We monitor the dynamics of hot carriers in InSe by means of two-photon photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to electronic states degenerate with the $\overline{M}$ valley. Subsequently, the electronic cooling is dictated by Fr\"ohlich coupling with phonons of small momentum transfer. Ab initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the $\overline{M}$ valley could travel through a multilayer flake of InSe with a lateral size of 1 $\ensuremath{\mu}\mathrm{m}$. The hot carriers pave a viable route to the realization of below-band-gap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides.

International audience; Under-doped La-214 cuprates show a charge-and spin-modulation known as " stripes " [1]. These stripe modulations are (quasi)-static close to 1/8 hole doping where superconductivity is suppressed. The pseudo-gap phase of other cuprate compounds recently also revealed charge modulation, but interpreted rather as a charge density wave (CDW) [2, 3, 4], that possibly competes with superconductivity. In this context, to better understand the interplay between the stripe phase and the superconductivity, we use angle-resolved photoemission spectroscopy to study the electronic band structure and gap in La-214 cuprates near 1/8 doping (La 2−x−y Nd y Sr x CuO 4 (x = 0.12; y = 0.0 & 0.4)) and compare with the previous results in the same system [5] and La 1.86 Ba 0.14 CuO 4 [6]. Our data shows a loss of spectral intensity towards the end of the Fermi arcs, that is possibly due to a strong renormalisation, as already pointed out elsewhere * matteo.dastuto@neel.cnrs.fr-Institut Néel CNRS-25, av des Martyrs-38042 Grenoble cedex 9; tel: (+33)(0)4 76 88 12 84 [5], with a noisy but still measurable gap. On the nodal direction no gap is observed within our statistics, but a sizeable decrease in intensity with temperature. Moreover, we do not see any shadow band, but our Fermi surface can be well modelled with a single electron band calculation in the tight binding approximation, even very close to the 1/8 doping La 2−x−y Nd y Sr x CuO 4 with and without Nd substitution.

International audience; We review measurements of angle and time resolved photoelectron spectroscopy on the surface states of the Bi(1 1 1) surface. The work covers several aspects of these surface states, discussing the topological properties, the strong anisotropy of the spin–orbit splitting and the dynamical relaxation of photoexcited electrons. Since time resolved experiments disentagle interaction processes in real time, the reported data offer a novel perspective on the motion of charge carriers in surface states and will serve as an unuseful reference for other systems with strong spin–orbit coupling.

We address the role of nonlocal Coulomb correlations and short-range magnetic fluctuations in the high-temperature phase of ${\mathrm{Sr}}_{2}{\mathrm{IrO}}_{4}$ within state-of-the-art spectroscopic and first-principles theoretical methods. Introducing an ``oriented-cluster dynamical mean-field scheme'', we compute momentum-resolved spectral functions, which we find to be in excellent agreement with angle-resolved photoemission spectra. We show that while short-range antiferromagnetic fluctuations are crucial to accounting for the electronic properties of ${\mathrm{Sr}}_{2}{\mathrm{IrO}}_{4}$ even in the high-temperature paramagnetic phase, long-range magnetic order is not a necessary ingredient of the insulating state. Upon doping, an exotic metallic state is generated, exhibiting cuprate-like pseudo-gap spectral properties, for which we propose a surprisingly simple theoretical mechanism.

We present a time- and angle-resolved photoemission study of the transition-metal dichalcogenide ${\mathrm{WTe}}_{2}$, a candidate type-II Weyl semimetal exhibiting extremely large magnetoresistence. Using femtosecond light pulses, we characterize the unoccupied states of the electron pockets above the Fermi level. Following the ultrafast carrier relaxation in distinct parts of the Brillouin zone, we report remarkably similar decay dynamics for electrons and holes. Our results confirm that charge compensation between electron and hole pockets---a key effect to explain the nonsaturating magnetoresistance of this material---is a distinctive feature of ${\mathrm{WTe}}_{2}$ even in an out-of-equilibrium regime.

We report time- and angle-resolved spectroscopic measurements in optimally doped ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$. The photoelectron intensity maps are monitored as a function of temperature, photoexcitation density, and delay time from the pump pulse. We evince that thermal fluctuations are effective only for temperatures near the critical value whereas photoinduced fluctuations scale linearly at low pumping fluence. The minimal energy to fully disrupt the superconducting gap slightly increases when moving off the nodal direction. No evidence of a pseudogap arising from other phenomena than pairing has been detected in the explored region of reciprocal space. On the other hand, a model accounting for the finite pair breaking explains the gap filling both in the near-nodal as well as in the off-nodal direction. Finally, we observed that nodal quasiparticles develop a faster dynamics when pumping the superconductor with fluence large enough to induce the total collapse of the gap.

We present an experimental study describing the effects of surface termination on the electronic structure of the natural topological superlattice phase ${\mathrm{Sb}}_{2}\mathrm{Te}$. Using scanning angle-resolved photoemission microscopy, we consistently find various nonequivalent regions on the same surface after cleaving various ${\mathrm{Sb}}_{2}\mathrm{Te}$ single crystals. We were able to identify three distinct terminations characterized by different Sb/Te surface stoichiometric ratios and with clear differences in their band structure. For the dominating Te-rich termination, we also provide a direct observation of the excited electronic states and of their relaxation dynamics by means of time-resolved angle-resolved photoemission spectroscopy. Our results clearly indicate that the surface electronic structure is strongly affected by the bulk properties of the superlattice.

Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs). Here, we excite and measure photocurrents in the model topological insulator Bi2Se3 with a time resolution of 20 fs by sampling the concomitantly emitted broadband terahertz (THz) electromagnetic field from 0.3 to 40 THz. Strikingly, the surface current response is dominated by an ultrafast charge transfer along the Se–Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to be orders of magnitude smaller than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are of direct relevance for broadband optoelectronic devices based on topological-insulator surface currents., Surface currents in topological insulators can be controlled by light, but the underlying mechanisms are not well understood. Here, Braun et al. report an ultrafast shift photocurrent at the surface of Ca-doped Bi2Se3, whereas injection currents are much smaller than expected from asymmetric depopulation of the Dirac cone.

New data on Bi 2 Sr 2 CaCu 2 O 8+δ (Bi2212) reveal interesting aspects of photoexcited superconductors. The electrons dynamics show that inelastic scattering by nodal quasiparticles decreases when the temperature is lowered below the critical value of the superconducting phase transition. This drop of electronic dissipation is astonishingly robust and survives to photoexcitation densities much larger than the value sustained by long-range superconductivity. The unconventional behavior of quasiparticle scattering is ascribed to superconducting correlations extending on a length scale comparable to the inelastic mean-free path. Our measurements indicate that strongly driven superconductors enter in a regime without phase coherence but finite pairing amplitude.

Topological insulators are transformative quantum solids with immune-to-disorder metallic surface states having Dirac band structure. Ubiquitous charged bulk defects, however, pull the Fermi energy into the bulk bands, denying access to surface charge transport. Here we demonstrate that irradiation with swift ($\sim 2.5$ MeV energy) electron beams allows to compensate these defects, bring the Fermi level back into the bulk gap, and reach the charge neutrality point (CNP). Controlling the beam fluence we tune bulk conductivity from \textit{p}- (hole-like) to \textit{n}-type (electron-like), crossing the Dirac point and back, while preserving the Dirac energy dispersion. The CNP conductance has a two-dimensional (2D) character on the order of ten conductance quanta $G_0 =e^2/h$, and reveals, both in Bi$_2$Te$_3$ and Bi$_2$Se$_3$, the presence of only two quantum channels corresponding to two topological surfaces. The intrinsic quantum transport of the topological states is accessible disregarding the bulk size., Comment: Main manuscript - 12 pages, 4 figures; Supplementary file - 15 pages, 11 figures, 1 Table, 4 Notes

et al., Topological insulators are a promising class of materials for applications in the field of spintronics. New perspectives in this field can arise from interfacing metal-organic molecules with the topological insulator spin-momentum locked surface states, which can be perturbed enhancing or suppressing spintronics-relevant properties such as spin coherence. Here we show results from an angle-resolved photemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM) study of the prototypical cobalt phthalocyanine (CoPc)/BiSe interface. We demonstrate that that the hybrid interface can act on the topological protection of the surface and bury the Dirac cone below the first quintuple layer., M.C., L.K., E.P., M.K., and M.M. acknowledge financial support by “Investissement d’avvenir Labex Palm” (Grant No. ANR-10-LABX-0039-PALM) and by the ANR “Iridoti”(Grant No. ANR13-IS04-0001-01). M.P. and A.M. acknowledge support from the Ministerio de Ciencia e Innovación (Grant No. MAT2013-46593-C6-5-P) and the Severo Ochoa Program (MINECO, grant SEV-2013-0295). Work of L.K.-E. is supported by NSF Grants DMR-1420634 and DMR-1312483, and by DODW911NF-13-1-0159. G.D.S. acknowledges Italian MIUR project FIRB “Supracarbon” RBFR10DAK6”. A.G. thanks JU grant Agreement 270722, “Energy for a green society: from sustainable harvesting to smart distribution (ERG)”. A. P. and S. L. thank Elettra-Sincrotrone Trieste S.C.p.A. for economic support. E.V.C. acknowledges funding from the University of Basque Country UPV/EHU (Grant No. GIC07-IT- 756-13), the Departamento de Educacion del Gobierno Vasco (Grant No. FIS2010-275), the Spanish Ministerio de Ciencia e Innovacion (Grant No. 19609-C02-01), the Tomsk State University Academic D.I. Mendeleev Fund Program (Grant No. 8.1.05.2015), the Spanish Ministry of Economy and Competitiveness MINECO (Grant No. FIS2013-48286-C2-1-P), and Saint Petersburg State University (Project No. 15.61.202.2015). We acknowledge the support by NFFA Trieste.

Despite extensive work on high-temperature superconductors, the critical behavior of an incipient condensate has so far been studied exclusively under equilibrium conditions. Here, we excite Bi2Sr2CaCu2O8+d with a femtosecond laser pulse and monitor the subsequent nonequilibrium dynamics of the mid-infrared conductivity. Our data allow us to discriminate temperature regimes where superconductivity is either coherent, fluctuating or vanishingly small. Above the transition temperature Tc, we make the striking observation that the relaxation to equilibrium exhibits power-law dynamics and scaling behavior, both for optimally and underdoped superconductors. Our findings can in part be modeled using time-dependent Ginzburg-Landau theory and provide strong indication of universality in systems far from equilibrium., Comment: 5 pages, 4 figures

The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials., Nature Communications, in press (12 pages, 6 figures)

et al., We investigate the electronic states of BiTeI after the optical pumping with circularly polarized photons. Our data show that photoexcited electrons reach an internal thermalization within 300 fs of the arrival of the pump pulse. Instead, the dichroic contrast generated by the circularly polarized light relaxes on a time scale shorter than 80 fs. This result implies that orbital and spin polarization created by the circular pump pulse rapidly decays via manybody interaction. The persistent dichroism at longer delay times is due to the helicity dependence of superdiffussive transport. We ascribe it to the lack of inversion symmetry in an electronic system far from equilibrium conditions., We acknowledge that the FemtoARPES project was financially supported by the RTRA Triangle de la Physique, and the ANR program Chaires d’Excellence (Nr. ANR-08-CEXCEC8-011-01).

International audience; We investigate the ultrafast response of the bismuth (111) surface by means of time resolved photoemission spectroscopy. The direct visualization of the electronic structure allows us to gain insights on electron-electron and electron-phonon interaction. Concerning electron-electron interaction , it is found that electron thermalization is fluence dependent and can take as much as several hundreds of femtoseconds at low fluences. This behavior is in qualitative agreement with Landau's theory of Fermi liquids but the data show deviations from the behavior of a common 3D degenerate electron gas. Concerning electron-phonon interaction, our data allows us to directly observe the coupling of individual Bloch state to the coherent A1g mode. It is found that surface states are much less coupled to this mode when compared to bulk states. This is confirmed by ab initio calculations of surface and bulk bismuth.

International audience; We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.

International audience; We investigate the temporal evolution of the electronic states at the bismuth (111) surface by means of time- and angle-resolved photoelectron spectroscopy. The binding energy of bulklike bands oscillates with the frequency of the A(1g) phonon mode, whereas surface states are insensitive to the coherent displacement of the lattice. A strong dependence of the oscillation amplitude on the electronic wave vector is correctly reproduced by ab initio calculations of electron-phonon coupling. Besides these oscillations, all the electronic states also display a photoinduced shift towards higher binding energy whose dynamics follows the evolution of the electronic temperature.

International audience; We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi2Te3 following a femtosecond laser excitation. Using time and angle-resolved photoelectron spectroscopy, we provide a direct real-time visualization of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few picoseconds are necessary for the Dirac cone non-equilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.

International audience; The charge carrier dynamics of photoexcited bismuth generates a Drude response that evolves over time. Our data show that the plasma frequency of bismuth displays an initial increase and a subsequent decay. We have performed ab initio calculations on bulk bismuth within the density functional theory and show that this peculiar behavior is due to local extrema in the valence and conduction bands. It follows that most of the carriers first accumulate in these extrema and reach the Fermi level only 0.6 ps after the photoexcitation. © 2012 American Physical Society.

We investigate the bismuth (111) surface by means of time and angle resolved photoelectron spectroscopy. The parallel detection of the surface states below and above the Fermi level reveals a giant anisotropy of the Spin-Orbit (SO) spitting. These strong deviations from the Rashba-like coupling cannot be treated in $\textbf{k}\cdot \textbf{p}$ perturbation theory. Instead, first principle calculations could accurately reproduce the experimental dispersion of the electronic states. Our analysis shows that the giant anisotropy of the SO splitting is due to a large out-of plane buckling of the spin and orbital texture., Comment: 5 pages, 4 figures

We investigate $\mathrm{Ba}({\mathrm{Fe}}_{0.65}{\mathrm{Ru}}_{0.35}{)}_{2}{\mathrm{As}}_{2}$, a compound in which superconductivity appears at the expense of magnetism, by transport measurements and angle resolved photoemission spectroscopy. By resolving the different Fermi surface pockets and deducing from their volumes the number of hole and electron carriers, we show that Ru induces neither hole nor electron doping. However, the Fermi surface pockets are about twice larger than in ${\mathrm{BaFe}}_{2}{\mathrm{As}}_{2}$. A change of sign of the Hall coefficient with decreasing temperature evidences the contribution of both carriers to the transport. Fermi velocities increase significantly with respect to ${\mathrm{BaFe}}_{2}{\mathrm{As}}_{2}$, suggesting a reduction of correlation effects.

High-resolution angle-resolved photoemission data show that a metal-insulator Mott transition occurs at the surface of the quasi-two-dimensional compound 1T-TaSe2. The transition is driven by the narrowing of the Ta 5d band induced by a temperature-dependent modulation of the atomic positions. A dynamical mean-field theory calculation of the spectral function of the half-filled Hubbard model captures the main qualitative feature of the data, namely, the rapid transfer of spectral weight from the observed quasiparticle peak at the Fermi surface to the Hubbard bands, as the correlation gap opens up.

International audience; A novel experimental apparatus for time and angle-resolved photoemission on solid surfaces is presented. A 6.28 eV laser source operating at 250 kHz repetition rate is obtained by frequency mixing in nonlinear beta barium borate crystals. This UV light source has a high photon flux of 10(13) photons/s with relatively low number of photons/pulse so that Fermi surface mapping over a wide region of the Brillouin zone is possible while mitigating space charge effects. The UV source has been fully characterized spatially, spectrally, and temporally. Its potential for time and angle-resolved photoemission is demonstrated through Fermi surface mapping and photoexcited electron dynamics in Bismuth. True femtosecond time resolution

In the archaeological practice, Digital Terrain Models (DTMs) and Digital Surface Models (DSMs) may be used to represent spatial information about the site by conveying information such as differences in levels, morphology of the terrain and movements of volumes during the excavation. Nowadays DTMs and DSMs can be easily obtained by image-based matching using low altitude aerial dataset acquired from a digital camera by means of a lifting device. In recent years, the spread of commercial multi-rotor unmanned aerial vehicles and their decreasing cost made low-altitude aerial photography even easier than before, where balloons, kites and telescopic masts would have been used instead. However, the use of drones is often forbidden by law, especially in the archaeological areas, and therefore a more traditional approach must to be adopted instead.This paper presents two different approaches adopted on the field to acquire the DTM of an archaeological excavation: the use of a pole held by a chest harness to lift a camera up to 3.5 m height fitted with a 20 mm wide angle lens; and a second solution that exploits ground-based fisheye photogrammetry. In general, an image network acquired from ground level is challenging due to: i) the poor coverage that can be obtained on the ground, ii) the large number of images that are required to cover large areas and consequently iii) the longer elaboration time that is required to process the data. The fisheye approach, however, proved to be more effective thanks to the more robust image network resulting both from the wider field of view and from the possibility to handle large datasets by downsampling the images and still retrieving strong key points. The main difference with the first system is that the monotonous images acquired by the 20 mm lens, very plain in texture, require working at full resolution in order to distinguish valid features in the sand.The final product of the tests carried out along this line in 2019 at Saqqara (Egypt) is a comprehensive DSM of the entire archaeological site with an accuracy of ~3 cm.