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The rise of two-dimensional (2D) crystalline superconductors has opened a new frontier of investigating unconventional quantum phenomena in low dimensions. However, despite the enormous advances achieved towards understanding the underlying physics, practical device applications like sensors and detectors using 2D superconductors are still lacking. Here, we demonstrate nonreciprocal antenna devices based on atomically thin NbSe2. Reversible nonreciprocal charge transport is unveiled in 2D NbSe2 through multi-reversal antisymmetric second harmonic magnetoresistance isotherms. Based on this nonreciprocity, our NbSe2 antenna devices exhibit a reversible nonreciprocal sensitivity to externally alternating current (AC) electromagnetic waves, which is attributed to the vortex flow in asymmetric pinning potentials driven by the AC driving force. More importantly, a successful control of the nonreciprocal sensitivity of the antenna devices has been achieved by applying electromagnetic waves with different frequencies and amplitudes. The device’s response increases with increasing electromagnetic wave amplitude and exhibits prominent broadband sensing from 5 to 900 MHz., Here, the authors observe reversible nonreciprocal charge transport in two-dimensional NbSe2, and demonstrate antenna devices exhibiting strong sensitivity to driving AC electromagnetic waves in the superconducting regime.

Stimulated by novel properties in topological insulators, experimentally realizing quantum phases of matter and employing control over their properties have become a central goal in condensed matte...

Mechanically exfoliated two-dimensional ferromagnetic materials (2D FMs) possess long-range ferromagnetic order and topologically nontrivial skyrmions in few layers. However, because of the dimensionality effect, such few-layer systems usually exhibit much lower Curie temperature (TC) compared to their bulk counterparts. It is therefore of great interest to explore effective approaches to enhance their TC, particularly in wafer-scale for practical applications. Here, we report an interfacial proximity-induced high-TC 2D FM Fe3GeTe2 (FGT) via A-type antiferromagnetic material CrSb (CS) which strongly couples to FGT. A superlattice structure of (FGT/CS)n, where n stands for the period of FGT/CS heterostructure, has been successfully produced with sharp interfaces by molecular-beam epitaxy on 2-inch wafers. By performing elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally discovered that TC of 4-layer Fe3GeTe2 can be significantly enhanced from 140 K to 230 K because of the interfacial ferromagnetic coupling. Meanwhile, an inverse proximity effect occurs in the FGT/CS interface, driving the interfacial antiferromagnetic CrSb into a ferrimagnetic state as evidenced by double-switching behavior in hysteresis loops and the XMCD spectra. Density functional theory calculations show that the Fe-Te/Cr-Sb interface is strongly FM coupled and doping of the spin-polarized electrons by the interfacial Cr layer gives rise to the TC enhancement of the Fe3GeTe2 films, in accordance with our XMCD measurements. Strikingly, by introducing rich Fe in a 4-layer FGT/CS superlattice, TC can be further enhanced to near room temperature. Our results provide a feasible approach for enhancing the magnetic order of few-layer 2D FMs in wafer-scale and render opportunities for realizing realistic ultra-thin spintronic devices., Utilizing proximity effect, we realize an effective and reliable approach to accomplish near-room-temperature (286.7 K) ferromagnetic order and double switching behavior in wafer-scale 4-layer-Fe3GeTe2/1.6-nm-CrSb superlattice.

A conventional passive matching method cannot be used for a low-frequency ultrawideband (UWB) antenna of high performance. In this paper, an amplifier module is combined with a short monopole antenna to design a high-performance active receiving antenna for 10 kHz–100 MHz UWB through model simulation. In addition, theoretical analysis of the antenna’s noise is made, and the theoretical basis for improving the sensitivity of the active antenna is obtained. Finally, the amplifier module is fabricated and the sensitivity of the antenna is tested using the equivalent capacitance substitution method. Tests show that the active antenna has very high sensitivity, bandwidth, and gain, and can be applied to cosmic radio signal detection.

We have for the first time reported third harmonic generation in a three-dimensional Dirac semimetal Cd3As2 film. We further demonstrate that a simple planar cavity can be used to significantly enhance the nonlinear response.

Recently, discovery of three-dimensional (3D) topological Dirac/Weyl semi-metal opens up a new frontier fields for neoteric type of photodetectors. As a most representative 3D Dirac semi-metal, Cadmium arsenide (Cd3As2) has ultra-high charge mobility beyond graphene and possess strong light and matter interaction. Herein, photodetector prototype based on micro-nanometer scaled Cd3As2 was developed, which has high photocurrent response even under slight bias of 1 mV and its responsivity could be up to 4.65 A/W at near infrared waveband of 808 nm. Moreover, the Cd3As2/CuPc heterojunction was further introduced for suppress dark current of Dirac semimetal Cd3A2 nanobelt that would effectively improve photoelectric detection performance. As expected, the responsivity (R) of Cd3As2/CuPc has been significantly enhanced in visible (405 nm) to near-infrared (980 nm) region, and maximum R and optimal detectivity (D*) of detector can be reach about 142.5 A/W and 7.83 × 1010 Jones under irradiation of 808 nm laser, respectively. All of the results indicate that 3D Dirac semi-metal Cd3As2 and its heterojunction design are great prospect applied in high-performance broadband detection devices.

Cadmium arsenide (Cd3As2), an emerging three-dimensional Dirac semimetal, has recently generated significant interest in the area of ultrafast optics and optoelectronics. However, its nonlinear susceptibility has not been experimentally studied; thus, it is not yet possible to evaluate its potential in nonlinear optics. In this work, we investigate third harmonic generation (THG) in a 100 nm thick Cd3As2 film using broadband infrared femtosecond lasers (across 1500–2350 nm). The χ3 of Cd3As2 (2.30 × 10−19 m2 V−2) is obtained by comparing the THG spectra with a glass substrate, graphene, and monolayer MoS2. We further demonstrate a simple approach to enhance the THG signal by introducing an underlying planar micro-cavity. An enhancement of about 420 times in the THG signal was recorded at ≃1560 nm. Our results indicate that Cd3As2 thin films can provide a similar platform for nonlinear optics with respect to graphene and may offer unique potential in the mid-infrared due to its broadband light–matter interaction and excellent tunability.

By employing optical pump Terahertz (THz) probe spectroscopy, a three dimensional (3D) Dirac semimetal, Cd3As2 film, was investigated systematically at room temperature. After photoexcitation at 400/800 nm, the rise time of photoenhanced THz photoconductivity (PC) is about ∼1.0 ps, increasing slightly with the pump fluence, in which time scale, photoexcited electrons and holes establish separate Fermi distribution with electrons in the conduction band and holes in the valence band via fast carrier-carrier scattering and carrier-phonon coupling. The subsequent THz PC relaxation shows single exponential decay with a time constant of ∼6.0 ps that is independent of pump fluence. The relaxation process is dominated by the electron-hole recombination via a radiative and nonradiative way, which is mediated by the phonon-phonon scattering. The optically induced THz complex PC can be well fitted with the Drude-Smith model. Our experimental results shed light on understanding the photocarrier dynamics of the 3D Dirac semimetal materials at THz frequency.

In this Letter, we demonstrate an electrically contacted saturable absorber (SA) device based on topological Dirac semimetal Cd3As2. With a current-induced temperature change in the range of 297–336 K, the modulation depth of the device is found to be significantly altered from 33% to 76% (under the irradiation of a 1560 nm femtosecond laser). The broad tuning of the modulation depth is attributed to the strong temperature dependence of the carrier concentration close to room temperature. The simple tuning mechanism uncovered here, together with the compatibility with III-V compounds substrate, such as GaAs, points to the potential of fabricating broadband, electrically tunable, SESAM-like devices based on emerging bulk Dirac materials.

We investigated the magneto-optical Kerr effects in C2v symmetric Fe/GaAs(110) film and quantitatively separated the linear and quadratic Kerr contributions with the rotating field method. The linear Kerr effect was experimentally found to have twofold anisotropy with crystal orientation, in well agreement with the theoretical prediction. In addition, the quadratic Kerr effects exhibit both twofold and fourfold anisotropy. The calculation based on a 4 × 4 transfer matrix method indicates that the anisotropies of the linear and quadratic Kerr effects both originate from the second order magneto-optical coupling. The C2v symmetric film with anisotropic linear Kerr effect may have a potential application on the future precise magneto-optical sensors.