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We present an experimental study of vortex dynamics in magnetic nanocontacts based on pseudo spin valves comprising the ${\mathrm{Co}}_{2}\mathrm{MnGe}$ Heusler compound. The films were grown by molecular beam epitaxy, where precise stoichiometry control and tailored stacking order allowed us to define the bottom ferromagnetic layer as the reference layer, with minimal coupling between the free and reference layers. 20-nm diameter nanocontacts were fabricated using a nanoindentation technique, leading to self-sustained gyration of the vortex generated by spin-transfer torques above a certain current threshold. By combining frequency- and time-domain measurements, we show that different types of spin-transfer induced dynamics related to different modes associated to the magnetic vortex configuration can be observed, such as mode hopping, mode coexistence, and mode extinction appearing in addition to the usual gyration mode.

The temperature-dependent ferroelectric properties of super-tetragonal ${\mathrm{BiFeO}}_{3}$ are investigated using surface-sensitive low-energy electron microscopy (LEEM). We use epitaxial oxide ${\mathrm{BiFeO}}_{3}/{\mathrm{Ca}}_{0.96}{\mathrm{Ce}}_{0.04}{\mathrm{MnO}}_{3}$ bilayers grown by pulsed laser deposition on ${\mathrm{YAlO}}_{3}$ substrates. Ferroelectric, micrometer-scale domains are written by piezoresponse force microscopy and subsequently observed by LEEM from room temperature up to about 950 K. Kelvin probe force microscopy and LEEM spectroscopy reveal that the surface potential is efficiently (g50%) screened by adsorbates that are only released after annealing above 873 $\ifmmode\pm\else\textpm\fi{}$ 50 K in ultrahigh vacuum. The surface structure and chemistry of the ferroelectric thin films are analyzed using scanning transmission electron microscopy, electron energy loss spectroscopy, and x-ray photoelectron spectroscopy, discarding the occurrence of a putative ``skin layer'' effect. While its magnetic and structural transitions were reported in the literature, the true, ferroelectric Curie temperature of super-tetragonal ${\mathrm{BiFeO}}_{3}$ has not been determined so far. Here, we measure a Curie temperature of 930 $\ifmmode\pm\else\textpm\fi{}$ 30 K for the super-tetragonal ${\mathrm{BiFeO}}_{3}$ surface and corroborate it with volume-sensitive, temperature-dependent x-ray diffraction measurements. These results suggest that LEEM can be used as a powerful tool to probe surface charge and ferroelectric transitions in ultrathin films.

Multiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics {\color{black} is expected to} eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic $\mathrm{BiFeO_3}$ with a periodicity of $500\,\mathrm{nm}$ yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic $\mathrm{La_{2/3}Sr_{1/3}MnO_3}$ magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with $>20 \,\mathrm{dB}$ rejection.

2D materials have recently demonstrated a strong potential for spintronic applications. This has been further reinforced by the discovery of ferromagnetic 2D layers. Nevertheless, the fragility of ...

International audience; We present and fully characterize a flow cell dedicated to imaging in liquid at the nanoscale. Its use as a routine sample environment for soft X-ray spectromicroscopy is demonstrated, in particular through the spectral analysis of inorganic particles in water. The care taken in delineating the fluidic pathways and the precision associated with pressure actuation ensure the efficiency of fluid renewal under the beam, which in turn guarantees a successful utilization of this microfluidic tool for in situ kinetic studies. The assembly of the described flow cell necessitates no sophisticated microfabrication and can be easily implemented in any laboratory. Furthermore, the design principles we relied on are transposable to all microscopies involving strongly absorbed radiations (e.g. X-ray, electron), as well as to all kinds of X-ray diffraction/scattering techniques.

International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D-semiconductor integration protocol preserves the interface integrity. Illustratively, the WS2/Ni electrode is shown to be resistant to oxidation (even after extended exposure to ambient conditions) and to present tunneling characteristics once integrated into a complete vertical device. Overall, these experiments show that the presented PLD approach used here for WS2 growth is versatile and has a strong potential to accelerate the integration and evaluation of large-scale 2D-semiconductor platforms in electronics and spintronics circuits.

International audience; We report on spin transport in WS2-based 2D-magnetic tunnel junctions (2D-MTJs), unveiling a band structure spin filtering effect specific to the transition metal dichalcogenides (TMDCs) family. WS2 mono-, bi-, and trilayers are derived by a chemical vapor deposition process and further characterized by Raman spectroscopy, atomic force microscopy (AFM), and photoluminescence spec-troscopy. The WS2 layers are then integrated in complete Co/Al2O3 /WS2/Co MTJ hybrid spin-valve structures. We make use of a tunnel Co/Al2O3 spin analyzer to probe the extracted spin-polarized current from the WS2/Co interface and its evolution as a function of WS2 layer thicknesses. For monolayer WS2, our technological approach enables the extraction of the largest spin signal reported for a TMDC-based spin valve, corresponding to a spin polarization of PCo/WS2 = 12%. Interestingly, for bi-and trilayer WS2, the spin signal is reversed, which indicates a switch in the mechanism of interfacial spin extraction. With the support of ab initio calculations, we propose a model to address the experimentally measured inversion of the spin polarization based on the change in the WS2 band structure while going from monolayer (direct bandgap) to bilayer (indirect bandgap). These experiments illustrate the rich potential of the families of semiconducting 2D materials for the control of spin currents in 2D-MTJs.

The recent introduction of two-dimensional materials into magnetic tunnel junctions (2D MTJs) offers very promising properties for spintronics, such as atomically defined interfaces, spin filtering, perpendicular anisotropy, and modulation of spin-orbit torque. Nevertheless, the difficulty of integrating exfoliated 2D materials into spintronic devices has limited exploration. Here the authors find a fabrication process leading to superior performance in MTJs based on transition-metal dichalcogenides, and further suggest a path to alleviate basic issues of technology and physics for 2D MTJs.

International audience; Room-temperature skyrmions in ferromagnetic films and multilayers show promise for encoding information bits in new computing technologies. Despite recent progress, ferromagnetic order generates dipolar fields that prevent ultrasmall skyrmion sizes, and allows a transverse deflection of moving skyrmions that hinders their efficient manipulation. Antiferromagnetic skyrmions could lift these limitations. Here we demonstrate that room-temperature antiferromagnetic skyrmions can be stabilized in synthetic antiferro-magnets (SAFs), in which perpendicular magnetic anisotropy (PMA), antiferromagnetic coupling and chiral order can be adjusted concurrently. Utilizing interlayer electronic coupling to an adjacent bias layer (BL), we demonstrate that spin-spiral states obtained in a SAF with vanishing PMA can be turned into isolated antiferromagnetic skyrmions. We also provide model-based estimates of skyrmion size and stability, showing that room-temperature antiferromagnetic skyrmions below 10 nm in radius can be anticipated in further optimized SAFs. Antiferromagnetic skyrmions in SAFs may thus solve major issues associated with ferromagnetic skyrmions for low-power spintronic devices.

MoS2-based vertical spintronic devices have attracted an increasing interest thanks to theoretical predictions of large magnetoresistance signals. However, experimental performances are still far from expectations. Here, we carry out the local electrical characterization of thin MoS2 flakes in a Co/Al2O3/MoS2 structure through conductive tip AFM measurements. We show that thin MoS2 presents a metallic behavior with a strong lateral transport contribution that hinders the direct tunnelling through thin layers. Indeed, no resistance dependence is observed with the flake thickness. These findings reveal a spin depolarization source in the MoS2-based spin valves, thus pointing to possible solutions to improve their spintronic properties.

International audience; An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider range of resistance measurement (over 10 decades) without any manual switching, which is a major advantage for the characterization of materials with large on-sample resistance variations. After describing the basics of the set-up, we report on preliminary investigations focused on academic samples of self-assembled monolayers with various thicknesses as a demonstrator of the imaging capabilities of our instrument, from qualitative and semi-quantitative viewpoints. Then two application examples are presented, regarding an organic photovoltaic thin film and an array of individual vertical carbon nanotubes. Both attest the relevance of the technique for the control and optimization of technological processes

Graphene has recently been shown to be an outstanding material: among its astonishing properties are the carrier mobility at room temperature (200 000 cm2 V−1 S−1) and the Young modulus (1.5 TPa). Graphene is a one-atom thick two-dimensional carbon crystal and has been first produced by mechanical exfoliation to obtain high purity defect-free sheets. Chemical vapour deposition (CVD) is a promising method producing larger areas of graphene but the process of transfer and deposition is not mastered. Finally much work has been done on graphene oxide (GO) for applications ranging from electronics to sensors. In this work we describe recent work on a method of production of graphene flakes based on liquid exfoliation and spraying. The challenge is to produce a nanometric uniform and covering film by tuning the spraying process. For many electronics applications a high quality junction between the graphene and the metallic contact is crucial. Hence the aim of our study is fabricating a film from the overlapping of graphene flakes with sufficient conducting properties. The factors that determine the contact resistance are, as yet, unclear. In this work we try to bring some light on the transport mechanisms involved in graphene metal junctions. Experimental measurements are performed both with a conductive probe Atomic Force microscope (AFM) and a Van der Pauw type method. Various types of graphene films are deposited on gold or silicon substrates and investigated. Various contact resistance contributions are discussed and assumptions are made to analyse quantitatively the results.