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Negative thermal expansion (NTE) behavior with giant thermal hysteresis exceeding 450 K has been observed in Fe3NiBx. This behavior is desirable in the field of pipe joint or encapsulation. The temperature dependent X-ray diffraction and magnetization indicate that NTE behavior with giant thermal hysteresis is related to crystal structure transition between face-centered cubic (fcc) and body-centered cubic (bcc), but not to the magnetic transition. The introduction of boron can reduce the NTE temperature range and stabilize the high temperature fcc phase. Therefore, we can obtain the NTE behavior below room temperature during cooling process, which is important for the practical application.

The negative thermal expansion (NTE) or nearly zero thermal expansion (NZTE) behaviors have been found in some magnetic metallic compounds with great application prospects. However, it is a big challenge for applications that the responding temperature range is not broad enough or far away from room temperature. Herein, a new method is put forward to design the wide temperature range of NTE and NZTE Behavior by NTE/NZTE multi-phase composite. In this method, the optimized volume fraction of the components achieves a concordant collaboration of multi-phase in the counteraction of NTE and positive thermal expansion (PTE) at several adjacent temperature ranges and thus the temperature range is broadened as expected. By this method, MnCuGeN-based NTE composite (290 K ≤ T ≤ 385 K, ΔT = 95 K) and MnCuZnSiGeN-based NZTE composite (200 K ≤ T ≤ 400 K, ΔT = 200 K) with excellent stability have been successfully designed and prepared. This idea will open an avenue to the multi-phase composite with designable NTE/NZTE properties, which would have important applications in aerospace and other modern industries.

Spin orbit torque (SOT) has drawn widespread attention in the emerging field of magnetic memory devices, such as magnetic random access memory (MRAM). To promote the performance of SOT-MRAM, most efforts have been devoted to enhance the SOT switching efficiency by improving the damping-like torque. Recently, some studies noted that the field-like torque also plays a crucial role in the nanosecond-timescale SOT dynamics. However, there is not yet an effective way to tune its relative amplitude. Here, we experimentally modulate the field-like SOT in W/CoFeB/MgO trilayers through tuning the interfacial spin accumulation. By performing spin Hall magnetoresistance measurement, we find that the CoFeB with enhanced spin dephasing, either generated from larger layer thickness or from proper annealing, can distinctly boost the spin absorption and enhance the interfacial spin mixing conductance Gr. While the damping-like torque efficiency increases with Gr, the field-like torque efficiency is found to decrease with it. The results suggest that the interfacial spin accumulation, which largely contributes to the field-like torque, is reduced by higher interfacial spin transparency. Our work shows a new path to further improve the performance of SOT-based ultrafast magnetic devices.

The influences of Fe substitutions on magnetic properties, phase transformations and magnetocaloric effects of Mn3Cu1-xFexN have been investigated. The magnetic phase transition temperature (Tc) increases but the first-order phase transition temperature decreases with increasing the Fe content. Fe doping separates the first-order phase transition into first-order and second-order phase transitions in Mn3Cu1-xFexN. The second-order (paramagnetic-ferromagnetic) transition coexists with first-order (ferromagnetic-ferrimagnetic) transition in Mn3Cu0.95Fe0.05N. Introduction of the second-order magnetic transition broadens the phase transition span, which greatly enhances the relative cooling power of Mn3CuN. The results indicate that resolving complex magnetic phase transition may improve the cooling capacity of antiperovskite compounds.

Effects of Ni substitution on magnetic and thermal expansion properties in Mn 3 Ga 1−x Ni x N (0 ≤ x ≤ 1.0) were investigated. The magnetic structure for Mn 3 GaN is a typical noncollinear antiferromagnetic Γ 5 g . After Ni was introduced to the Ga site, the spin alignment was changed from antiferromagnetic to ferromagnetic. In addition, the magnetic transition temperature first decreased and then increased with increasing Ni content, which could be ascribed to the competition between the electron-type doping effect and the lattice effect. Near the magnetic transition, Mn 3 Ga 1−x Ni x N showed an abrupt lattice contraction with increasing temperature and the magnitude of the lattice contraction gradually decreased from 0.38% (for x = 0) to 0.09% (for x = 1.0) with increasing Ni substitution. In particular, zero thermal expansion behavior below 150 K was observed in Mn 3 Ga .6 Ni .4 N, and thermal expansion coefficient α was estimated to be 0.311 × 10 −6 K −1 . The obtained zero thermal expansion is very useful for practical applications in precision devices. The zero thermal expansion behavior was assumed to be associated with the ferromagnetic characteristic induced by the Ni substitution, which stabilized the Γ 5 g antiferromagnetic structure.

The antiperovskite Mn 3 Zn 0.77 Mn 0.19 N 0.94 was investigated by in situ neutron powder diffraction (NPD) in the temperature region 5–300 K. Here, a noncollinear-antiferromagnetic/collinear-ferrimagnetic phase separation (PS) showing different lattice parameters was firstly revealed in antiperovskites. The NPD results prove that the noncollinear antiferromagnetic phase, even coexisting with the collinear ferrimagnetic phase, could be responsible for the zero thermal expansion behavior of Mn 3 Zn 0.77 Mn 0.19 N 0.94 below 110 K. These findings suggest that Mn 3 ZnN based materials could open a new avenue for further exploring the noncollinear magnetic PS and correlated physical properties of antiperovskites.

The negative thermal expansion (NTE) and structural evolution of antiperovskite compounds Mn3Ga1−xGexN (0 ≤ x ≤ 1.0) were systematically investigated. Our results indicate the crystal structure of Mn3Ga1−xGexN changes from cubic (C) to tetragonal (T4) with increasing Ge content by X-ray diffraction (XRD).The negative thermal expansion from x = 0 (operation-temperature range ▵T = 20 K) to x = 0.4 (▵T = 60 K) becomes broad and shifts to higher temperature, and then it became positive from x = 0.5 in Mn3Ga1−xGexN. Typically, Mn3Ga0.5Ge0.5N shows low thermal expansion behavior between 300 and 450 K (∆T = 150 K), and thermal expansion coefficient α is estimated to be 2 × 10−6 K−1. Furthermore, variable temperature XRD was measured to reveal the origin of NTE. The cubic I - cubic II phases coexistence (x = 0.2) and cubic I - tetragonal coexistence (x = 0.5, 0.6) was observed at low temperature. The tunable NTE is highly valuable for practical applications in precision devices.

The Mn3CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage Voc of 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor–metal transition (SMT) behavior at 250 K is also observed in the Mn3CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.

Owing to improved thermal stability and scalability, materials with perpendicular magnetic anisotropy (PMA) are extremely attractive. The all perpendicular magnetic tunnel junction ([Formula: see text]-MTJ) devices are primarily devoted to spin transfer torque (STT)-induced switching and few works report their microwave emission. Here, we demonstrate the basic results of RF function in nanoscale [Formula: see text]-MTJ which has two different thickness free layers separated by atom-thick tungsten insertion. The ultrathin W spacer layer not only enables the two CoFeB free layers precess as a single layer but also greatly enhances the PMA which further induces high-emission frequency. The all perpendicular spin transfer torque nano-oscillator (STNO) exhibited high frequency (7.6[Formula: see text]GHz) and large current modulation capability of [Formula: see text] at moderate external magnetic field. Along with our previous work on STT switching utilizing the similar stack, such a multifunctional structure could bring low cost solutions to Internet of Things (IoT) network applications.

Giant zero-field cooling exchange-bias-like behavior with ${H}_{\mathrm{EB}}=3.49\phantom{\rule{0.16em}{0ex}}\mathrm{kOe}$ was found in an antiperovskite $\mathrm{M}{\mathrm{n}}_{3}\mathrm{C}{\mathrm{o}}_{0.61}\mathrm{M}{\mathrm{n}}_{0.39}\mathrm{N}$ compound. The magnetic structure of $\mathrm{M}{\mathrm{n}}_{3}\mathrm{C}{\mathrm{o}}_{0.61}\mathrm{M}{\mathrm{n}}_{0.39}\mathrm{N}$ was resolved to be ferrimagentic ordering composed of canted ${\mathrm{\ensuremath{\Gamma}}}^{5\mathrm{g}}$ antiferromagnetic (AFM) and ferromagnetic (FM) along the [111] direction by the neutron diffraction technique. The exchange coupling model was proposed together with the first principles calculation for further understanding this exchange-bias-like behavior. It was found that the ferromagnetic exchange interaction between FM and the canted ${\mathrm{\ensuremath{\Gamma}}}^{5\mathrm{g}}$ AFM play an important role in the particular exchange-bias-like behavior. The exchange coupling constructed in the lattice is distinct from the interactions between collinear AFM and FM in conventional exchange bias system. In addition to the enhanced horizontal shift, hysteresis loops obtained after FC cooling also exhibited vertical shift. The macroscopic vertical shift of the magnetization is ascribed to the increase of the magnetic moment of canted ${\mathrm{\ensuremath{\Gamma}}}^{5\mathrm{g}}$ spins along the external magnetic field. This finding will promote the development of advanced magnetic devices.

The thermodynamic properties and negative thermal expansion (NTE) behavior of metal-organic framework MOF-5 are investigated within the quasi-harmonic approximation, by using density functional theory. For nanoporous MOF-5, the temperature dependence of bulk modulus increases with increasing temperature, indicating that the resistance to compression is enhanced gradually. The large NTE behavior is obtained, which agrees reasonably with the experimental data. From the Gruneisen parameter as a function of temperature, it can be found that low-frequency phonons are closely associated with the NTE of MOF-5. The corresponding vibrational modes can be viewed as the results of local deformations (translation, rotation, twisting) of BDC (1,4-benzenedicarboxylate) linker and zinc clusters. The lowest-frequency phonon mode (the transverse motion of carboxylate groups and benzene ring, zinc clusters being as rigid units) is confirmed to be most responsible for thermal contraction.

Antiperovskite intermetallic Mn3−xCrxZnN (0≤x≤0.5) compounds have been prepared to study the Cr doping effect on the electronic transport properties. The temperature dependent resistivity ρ(T) for x≤0.3 shows notable and broader slope change. Meanwhile, with increasing Cr doping, the slope change shifts to lower temperatures and is gradually suppressed for x>0.3. For x=0.0 and 0.5, the measurements of magnetization from 10 K to 350 K reveal that Mn3−xCrxZnN compounds go through a transition from the dominant AFM interactions to one where the FM and AFM interactions coexist. For low-temperature region (15–80 K), the electron–electron scattering is dominant, and the number of phonons abruptly increases with increasing temperature. Small polaron hopping model (SPH) is used to understand the temperature dependence of electrical resistivity in the high-temperature range of 200–300 K and a clear decrease of the polaron activation energy was observed for x≤0.2. The residual resistivity ratio (RRR) decreases while the residual resistivity increases (ρ0) with increasing Cr-doping level. The maximum total entropy change (ΔSmax) decreases by increasing the Cr doping from x=0.0 to 0.2.

The Cr doping effect on the lattice and magnetic properties in Mn3−xCrxZnN was reported in the antiferromagnetic intermetallic host material Mn3ZnN. The lattice parameter decreases with the increase of the Cr concentration. Measurements of magnetization from 10 K to 350 K reveal that sharp antiferromagnetic (AFM)-to-paramagnetic (PM) transitions of the host material exist at 185 K (ZFC) and 177 K (FC). The peak is broadened clearly as the Cr doping was increased and when the Cr concentration exceeded 0.3, a significant ferromagnetic (FM) character was found to coexist with an AFM phase. At x=0.4 and 0.5, the M–H curves exhibit small magnetic hysteresis loop, indicating the dominant FM interactions in these samples. Also, a positive value of Weiss Temperature (ΘW) at x=0.5 in H/M–T plot suggests that the FM interaction is dominant when the Cr doping increases.

The magnetovolume effects (MVEs) of $\mathrm{M}{\mathrm{n}}_{3}\mathrm{G}{\mathrm{a}}_{1\ensuremath{-}x}\mathrm{S}{\mathrm{n}}_{x}\mathrm{N}$ antiperovskite compounds have been investigated by means of neutron powder diffraction. Increasing the Sn-doping content at the Ga site leads to the broadening of the magnetic phase transition temperature range and the thermal expansion behavior changes from negative to positive. We establish the relationship between the square of the ordered magnetic moment ${m}^{2}$ and the volume variation $\mathrm{\ensuremath{\Delta}}{\ensuremath{\omega}}_{m}$ for the antiferromagnetic phase (${\mathrm{\ensuremath{\Gamma}}}^{5g}$ magnetic structure with rhombohedral symmetry $R\overline{3}m$). The temperature variations of $\mathrm{\ensuremath{\Delta}}{\ensuremath{\omega}}_{m}(T), {m}^{2}(T)$ and the magnetoelastic coupling constant $C(T)$ are also quantitatively analyzed according to the itinerant-electron theory. Moreover, the increase of the phonon contribution to the thermal expansion induced by Sn doping and the corresponding decrease of dm/dT are revealed to be the key parameters for tuning the MVEs. Our results allow elucidating and quantifying the mechanism of the spin-lattice coupling and can be used to design magnetic functional materials with controlled thermal expansion behaviors for specific applications.

Fe-doped MnNiGe alloys were successfully synthesized by solid-state reaction. Giant negative thermal expansion (NTE) behaviors with the coefficients of thermal expansion (CTE) of −285.23 × 10−6 K−1 (192–305 K) and −1167.09 × 10−6 K−1 (246–305 K) have been obtained in Mn0.90Fe0.10NiGe and MnNi0.90Fe0.10Ge, respectively. Furthermore, these materials were combined with Cu in order to control the NTE properties. The results indicate that the absolute value of CTE gradually decreases with increasing Cu contents. In Mn0.92Fe0.08NiGe/x%Cu, the CTE gradually changes from −64.92 × 10−6 K−1 (125–274 K) to −4.73 × 10−6 K−1 (173–229 K) with increasing value of x from 15 to 70. The magnetic measurements reveal that the NTE behaviors in this work are strongly correlated with the process of the magnetic phase transition and the introduction of Fe atoms could also change the spiral anti-ferromagnetic (s-AFM) state into ferromagnetic (FM) state at low temperature. Our study launches a new candidate for controlling thermal expansion properties of metal matrix materials which could have potential application in variable temperature environment.

Mn3Zn0.7Ge0.3N/Al composites were successfully fabricated by pressure infiltration technology. The large positive thermal expansion of Al is suppressed by adding Mn3Zn0.7Ge0.3N component. Nearly zero thermal expansion is achieved in the composite with 30 vol.% Mn3Zn0.7Ge0.3N. Moreover, the bending stress and modulus of Mn3Zn0.7Ge0.3N/Al composites increase gradually with increasing Mn3Zn0.7Ge0.3N content. The low thermal expansion and good mechanical properties of these materials could be beneficial to the electronic packaging and precision fields.

A baromagnetic effect in a novel tetragonal magnetic structure is introduced by vacancies in Mn3 Ga0.95 N0.94 , due to the change of the Mn-Mn distance and their spin re-orientation induced by a pressure field. This effect is proven for the first time in antiperovskite compounds by neutron powder diffraction analysis. This feature will enable wide applications in magnetoelectric devices and intelligent instruments.

The near-zero temperature coefficient of resistivity (NZ-TCR) behavior is reported in the antiperovskite compounds Mn3+xNi1−xN (0 ≤ x ≤ 0.333). Our results indicate that the broad temperature range (above 275 K extending to above 220 K) of NZ-TCR is obtained by Mn doping at the Ni site. The short-range magnetic ordering is revealed by both neutron powder diffraction and inverse magnetic susceptibility. Further, we find a strong correlation between the anomalous resistivity change of Mn3+xNi1−xN from the metal-like to the NZ-TCR behavior and the lack of the long-range magnetic ordering. The possible mechanism of NZ-TCR behavior is discussed using the spin-disorder scattering model.