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Subwavelength metamaterial structures in silicon waveguides open new degrees of freedom to control on-chip light propagation. They have been applied to many silicon photonic devices such as fiber-chip couplers, waveguide crossings, microspectrometers, ultra-fast optical switches, athermal waveguides, evanescent field sensors, polarization rotators and colorless interference couplers [1]. Here we report a demonstration of a metamaterial coupler and an InAs-on-InP quantum dash buried heterostructure laser optimized for mutual integration by direct facet-to-facet coupling with -1.2 dB coupling efficiency, coupled laser relative intensity noise (RIN) of -150 dB/Hz and 152 kHz linewidth. We further demonstrate the design of multi-line spectral notch filters based on narrow linewidth metamaterial Bragg filters synthesized using the layer-peeling method., 2020 Photonics North (PN), May 26-28, 2020, Niagara Falls, ON, Canada

Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature sensitivity, and larger modulation bandwidths than the conventional quantum well lasers. For III–V lasers monol...

Single-mode diode lasers on an InP(001) substrate have been developed using InAs/In0.53Ga0.47As quantum dash (Qdash) active regions and etched lateral Bragg gratings. The lasers have been designed to operate at wavelengths near 2 μm and exhibit a threshold current of 65 mA for a 600 μm long cavity, and a room temperature continuous wave output power per facet >5 mW. Using our novel growth approach based on the low ternary In0.53Ga0.47As barriers, we also demonstrate ridge-waveguide lasers emitting up to 2.1 μm and underline the possibilities for further pushing the emission wavelength out towards longer wavelengths with this material system. By introducing experimentally the concept of high-duty-cycle lateral Bragg gratings, a side mode suppression ratio of >37 dB has been achieved, owing to an appreciably increased grating coupling coefficient of κ ∼ 40 cm−1. These laterally coupled distributed feedback (LC-DFB) lasers combine the advantage of high and well-controlled coupling coefficients achieved in conventional DFB lasers, with the regrowth-free fabrication process of lateral gratings, and exhibit substantially lower optical losses compared to the conventional metal-based LC-DFB lasers.

The dynamic properties of MOVPE grown InP/InAs quantum-dot and quantum-dash lasers, showing identical structural design, emitting in the C-band are investigated and compared to each other. Based on the small-signal measurements, we show the impact of the density of states function on the cut-off frequency, being larger for quantum dots at low currents, and reaching similar values for quantum dashes only at higher currents. The large-signal measurements show error-free data transmission at 22.5 and 17.5 Gbit/s for the quantum-dot and quantum-dash lasers.

International audience; Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm² (~45 A/cm² per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52 K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.