1. Photophysical Model for Non-Exponential Relaxation Dynamics in Hybrid Perovskite Semiconductors
- Author
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Ayush Kumar, Nakul Jain, Dinesh Kabra, K. L. Narasimhan, Rishabh Saxena, and Naresh K. Kumawat
- Subjects
Materials science ,Photoluminescence ,LIGHT-EMITTING-DIODES ,02 engineering and technology ,Electron ,010402 general chemistry ,01 natural sciences ,Molecular physics ,LENGTHS ,CH3NH3PBI3 ,SOLAR-CELL APPLICATIONS ,Physical and Theoretical Chemistry ,Perovskite (structure) ,business.industry ,Relaxation (NMR) ,021001 nanoscience & nanotechnology ,DIFFUSION ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,INVERSE TEMPERATURE CRYSTALLIZATION ,Microsecond ,General Energy ,Semiconductor ,Orders of magnitude (time) ,LUMINESCENCE ,SINGLE-CRYSTALS ,RECOMBINATION DYNAMICS ,ORGANOMETAL HALIDE PEROVSKITES ,0210 nano-technology ,business ,Recombination - Abstract
The photoluminescence (PL) decay of hybrid halide perovskite single crystals (MAPbX(3), MA = CH3NH3+, Pb = Pb2+, X = Br-, and I-) is measured over 4 orders of magnitude in intensity over the time scales of 100s of nanoseconds to a few microseconds. This long PL decay is non-exponential, suggesting the presence of a distribution of carrier relaxation times. Spectro-temporal studies show that the emission peak red-shifts with increasing time. The physics of this problem is closely related to donor-acceptor pair recombination in crystalline semiconductors and recombination in a-Si:H. Based on these models, we present a simple model to account for the recombination dynamics in the perovskite systems. This model also accounts for the fluence dependence of the recombination kinetics. In this model, a fraction of the photogenerated electrons and holes are trapped in localized states. The electrons tunnel to the hole sites for recombination. The broad distribution of lifetimes is a consequence of the fact that the tunneling probability is very sensitive to the separation of electron-hole pairs, and PL decay dynamics is a function of excitation fluence, i.e., carrier density generated by optical excitation. The red-shift arises from the fact that holes and electrons are trapped at different energies.
- Published
- 2018
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