1. Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
- Author
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Hans Jürgen von Bardeleben, Abdul Salam Al Atem, Faraz A. Inam, Stefania Castelletto, Sophie Hameau, Jean-Marie Bluet, Shin-ichiro Sato, Alberto Boretti, Ahmed Fahad Almutairi, Gérard Guillot, School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia, Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon, Laboratoire Pierre Aigrain (LPA), Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris Diderot - Paris 7 (UPD7)-Fédération de recherche du Département de physique de l'Ecole Normale Supérieure - ENS Paris (FRDPENS), École normale supérieure - Paris (ENS Paris), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-École normale supérieure - Paris (ENS Paris), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Fabrication ,Silicon ,Infrared ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,vacancy ,lcsh:Chemical technology ,lcsh:Technology ,01 natural sciences ,Full Research Paper ,Ion ,chemistry.chemical_compound ,color centers ,silicon carbide ,Vacancy defect ,0103 physical sciences ,Silicon carbide ,Nanotechnology ,lcsh:TP1-1185 ,General Materials Science ,Electrical and Electronic Engineering ,quantum sensing ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,lcsh:Science ,010306 general physics ,micropillars ,lcsh:T ,business.industry ,Near-infrared spectroscopy ,proton irradiation ,021001 nanoscience & nanotechnology ,Fluorescence ,lcsh:QC1-999 ,Nanoscience ,chemistry ,Optoelectronics ,lcsh:Q ,0210 nano-technology ,business ,lcsh:Physics - Abstract
We report the enhancement of the optical emission between 850 and 1400 nm of an ensemble of silicon mono-vacancies (VSi), silicon and carbon divacancies (VCVSi), and nitrogen vacancies (NCVSi) in an n-type 4H-SiC array of micropillars. The micropillars have a length of ca. 4.5 μm and a diameter of ca. 740 nm, and were implanted with H+ ions to produce an ensemble of color centers at a depth of approximately 2 μm. The samples were in part annealed at different temperatures (750 and 900 °C) to selectively produce distinct color centers. For all these color centers we saw an enhancement of the photostable fluorescence emission of at least a factor of 6 using micro-photoluminescence systems. Using custom confocal microscopy setups, we characterized the emission of VSi measuring an enhancement by up to a factor of 20, and of NCVSi with an enhancement up to a factor of 7. The experimental results are supported by finite element method simulations. Our study provides the pathway for device design and fabrication with an integrated ultra-bright ensemble of VSi and NCVSi for in vivo imaging and sensing in the infrared.
- Published
- 2019