1. Normally-Off GaN Power Device Based on Stack AlGaN Barrier Structure and P-Type NiO Gate Electrode
- Author
-
Tao Fei Pu, Xiaobo Li, Shao Heng Cheng, Liuan Li, and Tong Zhang
- Subjects
010302 applied physics ,Materials science ,business.industry ,Mechanical Engineering ,Non-blocking I/O ,Normally off ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Power (physics) ,Stack (abstract data type) ,Mechanics of Materials ,0103 physical sciences ,Electrode ,Optoelectronics ,General Materials Science ,Thermal stability ,0210 nano-technology ,business - Abstract
In this study, we propose a novel normally-off AlGaN/GaN HFET based on stack AlGaN barrier structure and p-type NiO gate. The residual thin AlGaN barrier (with low Al content) is adopted to alleviate mobility degradation. Besides, p-type conductive NiO formed by thermal oxidation at 500 °C was used as gate electrode, which contribute to the positive shift of threshold voltage. Combining NiO gate and thin barrier structure, normally-off device with a threshold voltage of +1.1 V is realized. Temperature dependent transfer characteristics show that the normally-off device presents good thermally stability within the temperature range from 25 to 150 °C.
- Published
- 2020