1. Purely Gain-Coupled Distributed Feedback Bragg Semiconductor Laser Emitting At 795 Nm With a Wide Tunable Range
- Author
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Xia Liu, Peng Jia, Chunkao Ruan, Lijun Wang, Zhijun Zhang, Li Qin, Dezheng Ma, Yugang Zeng, Lei Liang, Yongyi Chen, Zaijin Li, Yuxin Lei, and Yue Song
- Subjects
periodic current ,Materials science ,02 engineering and technology ,01 natural sciences ,law.invention ,Semiconductor laser theory ,Gallium arsenide ,010309 optics ,Longitudinal mode ,chemistry.chemical_compound ,law ,distributed-feedback gain-coupled ,0103 physical sciences ,795 nm ,Applied optics. Photonics ,Spontaneous emission ,Electrical and Electronic Engineering ,Distributed feedback laser ,business.industry ,QC350-467 ,Optics. Light ,021001 nanoscience & nanotechnology ,Laser ,Atomic and Molecular Physics, and Optics ,TA1501-1820 ,Wavelength ,chemistry ,Optoelectronics ,0210 nano-technology ,business ,Lasing threshold - Abstract
We demonstrate a distributed feedback (DFB) semiconductor laser based on i-line lithography and surface periodic current injection technologies with a lasing wavelength of 795 nm, which corresponds to the D1 spectrum of Rb and has many applications with respect to alkali vapor lasers and atomic clocks. The maximum output power, side mode suppression ratio (SMSR), and single-longitudinal-mode tunable range of our device are 50.89 mW (at 20 °C), 34.56 dB, and 12.792 nm, respectively. The rate of change in wavelength with temperature of the laser is 0.401 nm/°C, which is equivalent to that of a Fabry-Perot (FP) laser and much better than that of a general DFB device. This device has a cavity the same as an FP laser without any etching gratings, meanwhile the lasing spectrum behaves a single longitudinal mode characteristic as a DFB laser.
- Published
- 2021
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