1. Area-Selective Molecular Layer Deposition of Polyimide on Cu through Cu-Catalyzed Formation of a Crystalline Interchain Polyimide
- Author
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Markku Leskelä, Marko Vehkamäki, Mika Pietikäinen, Mikko Ritala, Chao Zhang, Department of Chemistry, and Mikko Ritala / Principal Investigator
- Subjects
Pyromellitic dianhydride ,Materials science ,General Chemical Engineering ,116 Chemical sciences ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,chemistry.chemical_compound ,THIN-FILMS ,X-ray photoelectron spectroscopy ,CHEMISTRY ,Polymer chemistry ,Materials Chemistry ,Thin film ,Deposition (law) ,PRECURSORS ,chemistry.chemical_classification ,MONOLAYER RESISTS ,General Chemistry ,Polymer ,PERFORMANCE ,021001 nanoscience & nanotechnology ,X-RAY-SCATTERING ,DIFFUSION ,0104 chemical sciences ,chemistry ,GROWTH ,FIELD-EFFECT TRANSISTORS ,POLYMERS ,0210 nano-technology ,Selectivity ,Layer (electronics) ,Polyimide - Abstract
Novel area-selective molecular layer deposition (AS-MLD) of polyimide (PI) on Cu versus native SiO2 was studied. By use of 1,6-diaminohexane (DAH) and pyromellitic dianhydride (PMDA) as precursors, PI films can be selectively deposited on the Cu surface at 200-210 degrees C with a rate around 7.8 A/cycle while negligible growth takes place on SiO2. The selectivity was successfully demonstrated also on Cu/SiO2 patterns at 200 degrees C; after 180 MLD cycles, around 140 nm thick PI was deposited on Cu regions while
- Published
- 2020