Search

This work presents an acoustic platform using solidly mounted thin-oriented lithium niobate (LiNbO3) film on silicon (Si). A thin layer of amorphous Si eliminates a conductive layer generated in the thin-film bonding processes and contributes to acoustic energy confinement and thermal frequency stability. The gigahertz operating frequency is achieved by resorting to the guided acoustic wave shear-horizontal wave (SH0) in a 400-nm-thick X-cut LiNbO3 thin film. Due to the elimination of the parasitic surface conduction (PSC) effect, the electromechanical coupling of the guide acoustic wave is maximized in the Si-based heterogeneous wafer. Due to the minimized acoustic impedance mismatch between surface material and substrate, longitudinal and higher order spurious modes are suppressed. Due to the stiff substrate with a small temperature expansion coefficient (TEC), the solidly mounted structure features a reduced temperature coefficient of frequency (TCF) and improved power handling. The fabricated resonator shows an extracted electromechanical coupling coefficient of 22.8%, a high loaded $Q$ of 1208 at 1.6 GHz, and a TCF of −36 p/min/K. The compressed filter is demonstrated with a minimum insertion loss (IL) of 0.6 dB, a fractional bandwidth (FBW) of 8%, an out-of-band rejection of 30 dB, a TCF of −38.5 p/min/K at roll-off, and a miniaturized footprint of 0.4 mm2. The performance has shown the strong potential of the LiNbO3–Si platform for front-end applications in 5G. [ABSTRACT FROM AUTHOR]

This work presents an improved design that exploits dispersion matching to suppress the spurious modes in the lithium niobate first-order antisymmetric (A1) Lamb wave mode resonators. The dispersion matching in this work is achieved by micro-machining the lithium niobate thin film to balance the electrical and mechanical loadings of electrodes. In this article, the dispersion matchings of the A1 mode in lithium niobate based on different metals are analytically modeled and validated with finite-element analysis. The fabricated devices exhibit spurious-free responses with a quality factor of 692 and an electromechanical coupling coefficient of 28%. The demonstrated method herein could overcome a significant hurdle that is currently impeding the commercialization of A1 devices. [ABSTRACT FROM AUTHOR]

This work presents a class of micro-electro-mechanical system (MEMS)-driven radio frequency filters in the X-band. The X-band center frequencies are achieved by resorting to the third-order antisymmetric Lamb wave mode (A3) in a 650-nm-thick Z-cut lithium niobate thin film. A novel bandwidth (BW) widening technique based on using the self-inductance of the top interdigital transducers and bus lines is proposed to overcome the limitations set by the electromechanical coupling (${k} _{t}^{2}$) and satisfy the demands in miniaturization and wide BW. Four different designs of the filters are designed and fabricated to show the trade-off among BW, insertions loss (IL), out-of-band rejections, and footprint. Due to the spurious-free and high- ${Q}$ performance of the A3 lithium niobate resonators, the fabricated A3 lithium niobate filters have demonstrated small in-band ripples and sharp roll-offs. One of these fabricated has demonstrated a 3-dB BW of 190 MHz, an IL of 1.5 dB, and a compact footprint of 0.56 mm2. Another design is fabricated to demonstrate a 3-dB BW of 170 MHz, an IL of 2.5 dB, an out-of-band rejection of 28 dB, and a compact footprint of 1 mm2. [ABSTRACT FROM AUTHOR]

This work presents a new class of microelectromechanical system (MEMS) resonator toward 60 GHz for the fifth-generation (5G) wireless communications. The wide range of the operating frequencies is achieved by resorting to different orders of the antisymmetric Lamb wave modes in a 400-nm-thick Z-cut lithium niobate thin film. The resonance of 55 GHz demonstrated in this work marks the highest operating frequency for piezoelectric electromechanical devices. The fabricated device shows an extracted mechanical $Q$ of 340 and an $f\times Q$ product of $1.87\times 10^{13}$ in a footprint of $2 \times 10^{-3}$ mm2. The performance has shown the strong potential of LiNbO3 antisymmetric mode devices for front-end applications in 5G high-band. [ABSTRACT FROM AUTHOR]