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Nanocrystalline Cd1−XZnXS thin films (X = 0.2, 0.4, 0.6, 0.8) have been grown on glass substrate by spray pyrolysis technique using equimolar concentration aqueous solution of cadmium chloride, zinc acetate and thiourea. Prepared thin films have been characterised by UV–vis spectrophotometer, X-ray diffractometer, SEM/EDAX analysis and two-point probe set-up. The optical band gap of the films has been studied by transmission spectra in wavelength range 325–600 nm. It has been observed that optical band gap increases with increasing zinc concentration. The X-ray diffraction pattern of films indicated that the films are polycrystalline with hexagonal grain structure. The lattice parameters of prepared Cd1−XZnXS films decrease with increase in zinc content. SEM/ EDAX analysis consolidates the formation of ternary compound. The DC electrical conductivity and activation energy of the films has been measured in vacuum by a two-point probe set-up. It has been observed that the electrical conductivity decreases with increasing Zn concentration in films. [ABSTRACT FROM AUTHOR]

Transmission spectra (400–1500 nm) of thermally evaporated amorphous [(As2Se3)90Ge10]95M5 thin films have been analyzed to study the effect of impurities (M = Cd and Pb) on their optical properties. The refractive index increases with addition of metal impurities. The dispersion of refractive index has been studied using Wemple–DiDomenico single oscillator model. The optical gap has been estimated using Tauc’s extrapolation and was found to decrease with the addition of metal impurities from 1.46 to 1.36 eV (Cd) and 1.41 eV (Pb) with an uncertainty of ±0.01 eV. The change in optical properties with metal impurities has been explained on the basis of density, polarizability and bond energy of the system. [ABSTRACT FROM AUTHOR]