1. Band gap energy and bowing parameter of In-rich InAlN films grown by magnetron sputtering
- Author
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He, Hong, Cao, Yongge, Fu, Renli, Guo, Wang, Huang, Zhi, Wang, Meili, Huang, Changgang, Huang, Jiquan, and Wang, Hai
- Subjects
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SEMICONDUCTOR films , *BAND gaps , *ALUMINUM nitride , *INDIUM , *MAGNETRON sputtering , *CRYSTAL growth , *MOLECULAR structure , *OPTICAL properties , *THIN films - Abstract
Abstract: The crystal structure, band gap energy and bowing parameter of In-rich In x Al1−x N (0.7< x <1.0) films grown by magnetron sputtering were investigated. Band gap energies of In x Al1−x N films were obtained from absorption spectra. Band gap tailing due to compositional fluctuation in the films was observed. The band gap of the as-grown InN measured by optical absorption method is 1.34eV, which is larger than the reported 0.7eV for pure InN prepared by molecular beam epitaxy (MBE) method. This could be explained by the Burstein–Moss effect under carrier concentration of 1020 cm−3 of our sputtered films. The bowing parameter of 3.68eV is obtained for our In x Al1−x N film which is consistent with the previous experimental reports and theoretical calculations. [Copyright &y& Elsevier]
- Published
- 2010
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