1. Zero-Bias Mixer Based on A1GaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications.
- Author
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King-Yuen Wong, Wanjun Chen, Qi Zhou, and Chen, Kevin J.
- Subjects
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MIXING circuits , *SEMICONDUCTOR diodes , *GALLIUM nitride , *ELECTRON mobility , *SEMICONDUCTOR wafers , *HIGH temperatures , *WIRELESS sensor networks , *RADIO frequency identification systems - Abstract
In this paper, a zero-bias mixer using a lateral field-effect diode fabricated on standard GaN-on-Si AlGaN/GaN high electron-mobility-transistor wafers is demonstrated. The diode features strong nonlinearity near zero bias, enabled by a threshold-voltage modulation using a fluorine-plasma-treatment technique. The maximum change in conductance was adjusted to ~0 V, leading to optimal conversion loss (CL) of the mixer at zero bias and eliminating the need for any dc supplies. The mixer is characterized from room temperature (RT) to 250 °C. At 2.5 GHz and at RT, the CL and third-order intermodulation intercept point are 12.9 dB and 17.64 dBm, respectively. The operation of the proposed diode is modeled by a physical equivalent circuit, wit the element values extracted from the measured S-parameters. The voltage-biasing dependence of the CL can be explained by a the model. The high-temperature operation of the mixer shows that the proposed mixer can perform well in high-temperature and ultralow-power applications. [ABSTRACT FROM AUTHOR]
- Published
- 2009
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