1. Microscopic mechanisms of radiation-induced proton density decay in SiO/sub 2/ films
- Author
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S.P. Karna, R.D. Pugh, J.R. Chavez, W. Shedd, C.P. Brothers, B.K. Singaraju, M. Vitiello, G. Pacchioni, and R.A.B. Devine
- Subjects
Nuclear and High Energy Physics ,Materials science ,Electron capture ,Phonon ,Ab initio ,Hartree–Fock method ,Radiation ,Potential energy ,Condensed Matter::Materials Science ,Nuclear Energy and Engineering ,Ab initio quantum chemistry methods ,Electrical and Electronic Engineering ,Atomic physics ,Excitation - Abstract
In order to understand the physics of radiation-induced proton density decay in thin SiO/sub 2/ films, we performed ab initio Hartree-Fock calculations of the potential energy curves for the interaction between model oxide clusters and H in two charge states. The calculated results led to two separate proposed mechanisms for proton density decay in thin SiO/sub 2/ films: (1) electronic excitation involving hot phonon levels of the ground electronic state at low photon-energy radiation and (2) electron capture by protons at high photon-energy radiation. The proposed mechanisms qualitatively explain recent experimental observations.
- Published
- 1998
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