1. Optimization of inter-subband absorption of InGaAsSb/GaAs quantum wells structure
- Author
-
J.P. Vilcot, L. Chenini, Abdelkader Aissat, Laboratoire de Traitement de Signal et Imagerie [Blida] (LATSI), Université de Saâd Dahlab [Blida] (USDB ), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Optoélectronique - IEMN (OPTO - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Saâd Dahlab Blida 1 (UB1)
- Subjects
conduction band ,Materials science ,Band gap ,02 engineering and technology ,01 natural sciences ,Schrödinger equation ,[SPI.MAT]Engineering Sciences [physics]/Materials ,symbols.namesake ,[SPI]Engineering Sciences [physics] ,0103 physical sciences ,Energy level ,General Materials Science ,intersubband transition ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Conduction band ,Quantum well ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,Condensed Matter::Other ,business.industry ,cascade laser ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Wavelength ,Attenuation coefficient ,symbols ,Optoelectronics ,Photonics ,0210 nano-technology ,business ,absorption ,InGaAsSb/GaAs SQW - Abstract
International audience; In this work, we theoretically investigate the structural dependence of intersubband absorption of InGaAsSb/GaAs single quantum well structures. We begin by analyzing the impact of In and Sb incorporation on the critical thickness, conduction band offset and band gap energy. The first two electron energy levels E12 and the corresponding wavelength were made for the InxGa1−xAs1-ySby/GaAs system and are analyzed in detail by solving the Schrödinger equation. Also, we have investigated effects of composition and well width on the intersubband absorption. In addition, the wavelength and absorption coefficient of the ISBT can be adjusted and optimized by changing the composition and the width of the SQW. Finally, strain effects on intersubband absorption and on the peak response wavelength have also been systematically studied. Our study shows that InGaAsSb/GaAs SQW will play a key role in research of electronics and photonic devices in the future.
- Published
- 2019