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Abstract: Yb3+-doped (Lu0.5Y0.5)3Al5O12 (Yb:LuYAG) single crystal has been grown by the Czochralski method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometry (ICP-AES) method. The crystal structure has been determined by X-ray diffraction analysis. The absorption and emission spectra and fluorescence lifetime of Yb:LuYAG crystal were measured at room temperature. The spectroscopic parameters of Yb:LuYAG crystal were compared with those of Yb:YAG and Yb:LuAG crystals with the same doping level. The results indicate that Yb:LuYAG crystals are potential candidates for high-power ultrashort pulse lasers. [ABSTRACT FROM AUTHOR]

Abstract: A Yb3+-doped CaYAlO4 laser crystal has been grown by the Czochralski technique. The segregation coefficient was measured by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP-AES). The cell parameters were analyzed with X-ray diffraction experiments. Color defects in Yb:CaYAlO4 have been evidenced to be similar to those in undoped CaYAlO4. The polarized absorption spectra and the fluorescence spectrum of the Yb:CaYAlO4 crystal were measured at room temperature. The fluorescence decay time of the Yb3+ ion was investigated. The results show that Yb:CaYAlO4 has potential as a laser gain medium for an ultrashort laser system. [Copyright &y& Elsevier]

Abstract: A high optical quality erbium doped Lu2SiO5 single crystal has been grown by the Czochralski method. The distribution coefficient of Er3+ was measured to be ∼0.926. The absorption and emission spectra as well as the fluorescence decay curve of the excited state 4I13/2 were measured at room temperature. The spectroscopic parameters were calculated using the Judd–Ofelt theory, and the J–O parameters Ω 2 , Ω 4 and Ω 6 were found to be 4.451×10-20, 1.614×10-20 and 1.158×10-20 cm2, respectively. The room-temperature fluorescence lifetime of the Er3+ 4I13/2→4I15/2 transition was measured to be 7.74ms. The absorption and emission cross-section as well as the gain cross-section in the eye-safe regime of 1400–1700nm were also determined and discussed. [Copyright &y& Elsevier]

LaMgAl 11 O 19 (LMA) crystal with nominal Sm3+ concentrations of 8 at.% was grown by the Czochralski method. Polarized absorption spectra, polarized emission spectra and fluorescence decay curve of Sm:LMA crystal were recorded at room temperature. The absorption cross-sections at 404 nm were calculated to be 2.33 × 10−20 cm2 and 0.86 × 10−20 cm2 for σ and π polarization, respectively. The spontaneous transition rates, branching ratios and the radiative lifetime of the 4G 5/2 multiplet, were calculated. The Judd-Ofelt theory has been applied to evaluate the Ω t (t = 2, 4, 6) intensity parameters. The highest stimulated emission cross-sections for the 4G 5/2 → 6H 7/2 transition around 594 nm were calculated to be 1.67 × 10−21 cm2 for σ polarization and 1.15 × 10−21 cm2 for π polarization, with full width at half maximum (FWHM) of 7.68 nm and 7.27 nm, respectively. The fluorescence lifetime of the 4G 5/2 manifold was 1.84 ms. All the results show that Sm:LMA crystal would be a promising orange-red solid state laser material. • The most intensive absorption line of Sm3+ ion, suitable for 405 nm InGaN laser diode. • The rigidity of Sm:LMA crystal is higher than some host crystals. • The value Ω 2 of Sm:LMA crystal is comparable to Sm:LiYF 4. • The large parameter σ em τ of Sm3+ in LMA is beneficial for the solid state laser. [ABSTRACT FROM AUTHOR]