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We present the phonon-limited electron mobility in planar T graphene and find that the mobility ∝ T − 5. 53 at low temperature T. With the increase of temperature, the power exponent 5.53 decreases towards 1. Excitingly, the room-temperature mobility of planar T graphene is 2. 78 × 1 0 6 cm 2 /Vs which is about 20.59 times as large as that of n -type graphene at the same carrier density. Different from graphene with longitudinal acoustic phonon dominating the mobility, an in-plane optical phonon mode contributes the most to the mobility of planar T graphene. • We obtain a very large room-temperature mobility (2.78 × 106 cm2/Vs) than that of monolayer graphene at the same carrier density, which makes it a promising candidate for future carbon material devices. • We observe a low-temperature behavior μ ∝ T-5.53 in the regime of partly screened electron–phonon interaction. Moreover, we predict a very high Bloch–Grüneisen temperature larger than the Debye one in planar T graphene. • Different from graphene with longitudinal acoustic phonon dominating the mobility, an in-plane optical phonon mode contributes the most to the mobility of planar T graphene. [ABSTRACT FROM AUTHOR]