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The ON-resistance and its temperature dependence of the high electron mobility transistor (HEMT)-compatible lateral field-effect rectifier (L-FER) are investigated. Three types of transfer length method (TLM) patterns are utilized to extract the temperature-dependent electrical parameters of the resistance model. The technique presented in this paper delivers a direct and simple methodology for the investigation of the temperature dependence of the ON-resistance in the L-FER. The simulated output characteristics of the L-FER are in good agreement with the experimental results. [ABSTRACT FROM AUTHOR]