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AlN/GaN heterostructures with AlN thin film growing by low-thermal-budget (300 °C) plasma-enhanced atomic layer deposition (ALD) were realized on a semi-insulating GaN-on-sapphire template. By applying in situ ALD-grown Al2O3 as the gate dielectric, thin film transistors (TFTs) have been successfully fabricated. The proposed TFTs exhibit effective gate control with a low subthreshold swing of ∼ 85 mV/dec, an ION/ IOFF ratio of 105 and good channel conductive with a low-field mobility of ∼ 27 cm2/(V·s). This mobility is one order of magnitude higher than that achieved in AlN/GaN heterostructures growing by magnetron sputtering. The enhanced device performance is attributed to a high-quality ALD-AlN/GaN interface obtained by in situ remote-plasma pre-deposition cleaning and the single crystal nature of subsequent epitaxial AlN thin film by plasma-enhanced ALD. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

AlN/GaN heterostructures were realized by growing AlN thin film with low-thermal-budget (300^\circC) plasma-enhanced atomic layer deposition (ALD) on a semi-insulating GaN-on-sapphire template. Thin-film transistors (TFTs) have been successfully fabricated using in situ ALD-grown Al2O3 as the gate dielectric. The proposed TFTs exhibit good gate control with a low subthreshold swing of \sim85~mV/decade and a low-field mobility of \sim27~cm^2/(V\cdot s). This mobility is one order of magnitude higher than that obtained in AlN/GaN heterostructures grown by magnetron sputtering. The enhanced device performance is attributed to a high-quality ALD-AlN/GaN interface obtained by in situ remote-plasma predeposition cleaning and the subsequent epitaxial growth of AlN thin film by plasma-enhanced ALD. [ABSTRACT FROM PUBLISHER]