1. A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs.
- Author
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Jiang, Qimeng, Tang, Zhikai, Liu, Cheng, Lu, Yunyou, and Chen, Kevin J.
- Subjects
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SWITCHING power supplies , *SEMICONDUCTOR devices , *LOGIC circuits , *ALUMINUM gallium nitride , *THRESHOLD voltage - Abstract
We experimentally demonstrate a high-voltage low-standby power startup circuit for powering up the off-line switched-mode power supply (SMPS) during the startup period by exploiting monolithically integrated enhancement/depletion-mode metal–insulator–semiconductor high electron mobility transistors (E/D-mode MIS-HEMTs) fabricated on a GaN-on-Si power device platform. The E/D-mode MIS-HEMTs exhibit a threshold voltage of +1.2 and -11~V, respectively. The high-voltage D-mode device used in the demonstration features an OFF-state breakdown voltage of 640 V and a safe operating area with a thermal limitation of 11.6 W/mm, whereas the low-voltage E-mode device features a source-gate breakdown voltage of 98 V, satisfying the requirement of the startup circuit. The functionality of the startup circuit is successfully achieved with an input voltage range 10–200 V and a startup current of 1.08 mA. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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