1. Hafnium oxide gate dielectrics on sulfur-passivated germanium.
- Author
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Frank, Martin M., Koester, Steven J., Copel, Matthew, Ott, John A., Paruchuri, Vamsi K., Huiling Shang, and Loesing, Rainer
- Subjects
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HAFNIUM oxide , *OXIDES , *GATE array circuits , *DIELECTRICS , *GERMANIUM , *AMMONIA - Abstract
Sulfur passivation of Ge(100) is achieved using aqueous ammonium sulfide (NH4)2S(aq). The passivation layer is largely preserved after atomic layer deposition of the high-κ dielectric material HfO2 when sufficiently low growth temperatures (e.g., 220 °C) are employed. Oxygen incorporation is moderate and results in an electrically passivating GeOS interface layer. The HfO2/GeOS/Ge gate stack exhibits lower fixed charge and interface state density than a more conventional HfO2/GeON/Ge gate stack fabricated via an ammonia gas treatment. [ABSTRACT FROM AUTHOR]
- Published
- 2006
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