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Understanding the thermal properties of disordered systems is of fundamental importance for condensed matter physics - and for practical applications as well. While quantities such as the thermal conductivity are usually well characterised experimentally, their microscopic origin is often largely unknown - hence the pressing need for molecular simulations. However, the time and length scales involved with thermal transport phenomena are typically well beyond the reach of ab initio calculations. On the other hand, many amorphous materials are characterised by a complex structure, which prevents the construction of classical interatomic potentials. One way to get past this deadlock is to harness machine-learning (ML) algorithms to build interatomic potentials: these can be nearly as computationally efficient as classical force fields while retaining much of the accuracy of first-principles calculations. Here, we discuss neural network potentials (NNPs) and Gaussian approximation potentials (GAPs), two popular ML frameworks. We review the work that has been devoted to investigate, via NNPs, the thermal properties of phase-change materials, systems widely used in non-volatile memories. In addition, we present recent results on the vibrational properties of amorphous carbon, studied via GAPs. In light of these results, we argue that ML-based potentials are among the best options available to further our understanding of the vibrational and thermal properties of complex amorphous solids. [ABSTRACT FROM AUTHOR]

Despite its simple chemical constitution and unparalleled technological importance, the phase-change material germanium telluride (GeTe) still poses fundamental questions. In particular, the bonding mechanisms in amorphous GeTe have remained elusive to date, owing to the lack of suitable bond-analysis tools. Herein, we introduce a bonding indicator for amorphous structures, dubbed 'bond-weighted distribution function' (BWDF), and we apply this method to amorphous GeTe. The results underline a peculiar role of homopolar GeGe bonds, which locally stabilize tetrahedral fragments but not the global network. This atom-resolved (i.e., chemical) perspective has implications for the stability of amorphous 'zero bits' and thus for the technologically relevant resistance-drift phenomenon. [ABSTRACT FROM AUTHOR]

The structure of amorphous silicon (a‐Si) is widely thought of as a fourfold‐connected random network, and yet it is defective atoms, with fewer or more than four bonds, that make it particularly interesting. Despite many attempts to explain such "dangling‐bond" and "floating‐bond" defects, respectively, a unified understanding is still missing. Here, we use advanced computational chemistry methods to reveal the complex structural and energetic landscape of defects in a‐Si. We study an ultra‐large‐scale, quantum‐accurate structural model containing a million atoms, and thousands of individual defects, allowing reliable defect‐related statistics to be obtained. We combine structural descriptors and machine‐learned atomic energies to develop a classification of the different types of defects in a‐Si. The results suggest a revision of the established floating‐bond model by showing that fivefold‐bonded atoms in a‐Si exhibit a wide range of local environments–analogous to fivefold centers in coordination chemistry. Furthermore, it is shown that fivefold (but not threefold) coordination defects tend to cluster together. Our study provides new insights into one of the most widely studied amorphous solids, and has general implications for understanding defects in disordered materials beyond silicon alone. [ABSTRACT FROM AUTHOR]

The structure of amorphous silicon (a‐Si) is widely thought of as a fourfold‐connected random network, and yet it is defective atoms, with fewer or more than four bonds, that make it particularly interesting. Despite many attempts to explain such "dangling‐bond" and "floating‐bond" defects, respectively, a unified understanding is still missing. Here, we use advanced computational chemistry methods to reveal the complex structural and energetic landscape of defects in a‐Si. We study an ultra‐large‐scale, quantum‐accurate structural model containing a million atoms, and thousands of individual defects, allowing reliable defect‐related statistics to be obtained. We combine structural descriptors and machine‐learned atomic energies to develop a classification of the different types of defects in a‐Si. The results suggest a revision of the established floating‐bond model by showing that fivefold‐bonded atoms in a‐Si exhibit a wide range of local environments–analogous to fivefold centers in coordination chemistry. Furthermore, it is shown that fivefold (but not threefold) coordination defects tend to cluster together. Our study provides new insights into one of the most widely studied amorphous solids, and has general implications for understanding defects in disordered materials beyond silicon alone. [ABSTRACT FROM AUTHOR]

A glimpse into amorphous materials. In their Communication on page 10817 ff. R. Mazzarello, R. Dronskowski et al. investigate the bonding nature of amorphous GeTe, a prototypical phase‐change data‐storage material. Starting from a molecular‐dynamics snapshot, the role of different structural motifs is elucidated by the use of new tools; this way, the chemical “language” of bonding and coordination polyhedra may be transferred to the amorphous state. [ABSTRACT FROM AUTHOR]

Amorphous materials are being described by increasingly powerful computer simulations, but new approaches are still needed to fully understand their intricate atomic structures. Here, we show how machine‐learning‐based techniques can give new, quantitative chemical insight into the atomic‐scale structure of amorphous silicon (a‐Si). We combine a quantitative description of the nearest‐ and next‐nearest‐neighbor structure with a quantitative description of local stability. The analysis is applied to an ensemble of a‐Si networks in which we tailor the degree of ordering by varying the quench rates down to 1010 K s−1. Our approach associates coordination defects in a‐Si with distinct stability regions and it has also been applied to liquid Si, where it traces a clear‐cut transition in local energies during vitrification. The method is straightforward and inexpensive to apply, and therefore expected to have more general significance for developing a quantitative understanding of liquid and amorphous states of matter. [ABSTRACT FROM AUTHOR]

Amorphous materials are being described by increasingly powerful computer simulations, but new approaches are still needed to fully understand their intricate atomic structures. Here, we show how machine‐learning‐based techniques can give new, quantitative chemical insight into the atomic‐scale structure of amorphous silicon (a‐Si). We combine a quantitative description of the nearest‐ and next‐nearest‐neighbor structure with a quantitative description of local stability. The analysis is applied to an ensemble of a‐Si networks in which we tailor the degree of ordering by varying the quench rates down to 1010 K s−1. Our approach associates coordination defects in a‐Si with distinct stability regions and it has also been applied to liquid Si, where it traces a clear‐cut transition in local energies during vitrification. The method is straightforward and inexpensive to apply, and therefore expected to have more general significance for developing a quantitative understanding of liquid and amorphous states of matter. [ABSTRACT FROM AUTHOR]