1. Research on Annealing Temperature of SiO2 on Si Substrate
- Author
-
Hao Lv, Qian Guang Li, Yao Ming Ding, Ai Mei Liu, Bang Ren Shi, Xu Nong Yi, Chen Chen, and Ju Fang Tong
- Subjects
Diffraction ,Materials science ,Silicon dioxide ,Annealing (metallurgy) ,General Engineering ,Analytical chemistry ,Surface finish ,Sputter deposition ,chemistry.chemical_compound ,X-ray photoelectron spectroscopy ,chemistry ,Chemical engineering ,Thin film ,Chemical composition - Abstract
Silicon dioxide films; radio-frequency magnetron sputtering; annealing temperature Abstract. Silicon dioxide (SiO2) films are fabricated on single crystal silicon substrate by radio-frequency magnetron sputtering (RFMS) technique and annealed in electric furnaces at 800°C and 1180°C to form uniform, transparent and compact silica. The surface morphology and roughness of the films are characterized by an atomic force microscopy (AFM). X-ray diffraction (XRD) is employed to analyze the crystalline of the thin films. The chemical composition after annealing is analyzed using X-ray photoelectron spectroscopy (XPS).
- Published
- 2011
- Full Text
- View/download PDF