1. Infrared Spectroscopy Investigation of Cubic Boron Nitride Films
- Author
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Zhao Yongnian, He Zhi, Zhao Bing, Tao Yan-Chun, and Zou Guang-Tian
- Subjects
Argon ,Analytical chemistry ,Infrared spectroscopy ,chemistry.chemical_element ,Sputter deposition ,Nitride ,Atomic and Molecular Physics, and Optics ,Analytical Chemistry ,chemistry.chemical_compound ,chemistry ,Boron nitride ,Phase (matter) ,Surface layer ,Spectroscopy - Abstract
FT-IR Spectroscopy have been used for identifying both the structure of BN and the intensity of the compressive stress in cubic boron nitride (c-BN) film prepared by a unbalanced of (13.56 MHz) magnetron sputtering of a hexagonal boron nitride target in a mixture argon and nitride discharge. A T(temperature) - V(negative bias) phase diagram was obtained using the phase structure identify by IR spectra. Comparing the reflection infrared spectra (RIR) with the transmission infrared spectra (TIR) measured from same c-BN film, it is firstly found that RIR peak position of c-BN is lower than TIR peak position of c-BN, this means that the compressive stress on the surface layer of c-BN film is smaller than that inside c-BN film, may be this is the reason why thicker c-BN film can not be synthesized. A higher IR peak position of 1064 cm−1 and a lower peak position 1004.7 cm−1 were detected from a broken and partly peeled off c-BN film. The peak position of 1064 cm−1 agrees with that of bulk c-BN at 1065...
- Published
- 1998