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Highlights: [•] Wet oxidation at 950°C followed by NO anneal at 1175°C reduces the interface trap density to 4–6×1011 cm−2 eV−1. [•] The positive flat band voltage shift caused by low temperature wet oxidation can be suppressed by the following NO anneal. [•] The oxide breakdown fields for Al- and N-implanted C-face 4H-SiC samples are about 1.5 and 5MVcm−1, respectively. [•] The oxide breakdown field of dry oxidation at 950°C is the same as that of wet oxidation at 950°C. [ABSTRACT FROM AUTHOR]

Abstract: Thermal and pulsed excimer laser treatments have been applied for the post-implant anneals of Al- and N-implanted 3C-SiC samples to recover crystal damage caused by the ion implantation. FTIR reflectivity spectra show that the thermal anneal carried out at 1350°C for 30min has the better damage recovery in a range of the reststrahlen bands of both Al- and N-implanted samples. However, shoulders in the XRD spectra caused by the implantation indicate that a thermal anneal cannot completely recover the damage throughout an entire sample. For the Al-implanted samples, laser pulses with various energy densities can move shoulders to higher 2θ angles and then merge shoulders with the major peaks at the total energy density of 583.7J/cm2. 150 shots of laser pulses at the energy density of 256mJ/cm2 and combining with other energy densities can be used to recover damage in a range of the reststrahlen band which is induced by laser irradiation. Furthermore, the damage caused by the implantation in N-implanted samples is not close to the major peak in the XRD spectra, which can be improved by the laser pulses as well, but not moved to higher 2θ angles. However, the applied energy densities create extra damage in a range of the reststrahlen band. [Copyright &y& Elsevier]