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The lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}$Pm were measured using a position-sensitive detector following 60 keV room temperature implantation at a dose of 1 $\times 10^{13}$ cm$^{-2}$ and annealing at 900°C. The emission patterns around the [0001], [1102], [1101], and [2113] crystal axes give direct evidence that the majority (70%) of Nd and Pm atoms occupy substitutional Ga sites.

High quality YBa$_{2}$Cu$_{3}$O$_{6+x}$ (YBCO) superconducting thin films were implanted with the radioactive $^{197m}$Hg (T$_{1/2}$ = 24 h) isotope to low fluences of 10$^{13}$ atoms/cm$^{2}$ and 60 keV energy. The lattice location and stability of the implanted Hg were studied combining the Perturbed Angular Correlation (PAC) and Emission Channeling (EC) techniques. We show that Hg can be introduced into the YBCO lattice by ion implantation into unique regular sites. The EC data show that Hg is located on a highly symmetric site on the YBCO lattice, while the PAC data suggests that Hg occupies the Cu(1) site. Annealing studies were performed under vacuum and O$_{2}$ atmosphere and show that Hg starts to diffuse only above 653 K.