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This Letter studies the effect of crystallinity on the performance of AlN-based resistive random access memory using rapid thermal annealing. We compared I–V characters of devices fabricated at different annealing temperatures. By increasing the crystallinity of an AlN film, switching voltages and the memory window increase. Meanwhile, the reliability of the device improves. It is found that the electron conduction mechanism fits in with the space-charge-limited conduction model. Based on the above phenomena, we purpose that the crystallization leads to a decrease in vacancies within the AlN film, while it enhances local effects of grain boundaries on the electron transport. Both of these conclusions can result in an increase in switching voltages and the memory window. This paper can provide a platform for further studies on improving the performance of AlN-based devices. [ABSTRACT FROM AUTHOR]