1. Semiconductor Plasma Antennas Formed by Laser Radiation.
- Author
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Bogachev, N. N., Gusein-zade, N. G., Zhluktova, I. V., Kazantsev, S. Yu., Kamynin, V. A., Podlesnykh, S. V., Rogalin, V. E., Trikshev, A. I., Filatova, S. A., Tsvetkov, V. B., and Shokhrin, D. V.
- Subjects
LASER beams ,ANTENNAS (Electronics) ,SEMICONDUCTORS ,LASER plasmas ,TRANSMITTING antennas ,SUBSTRATE integrated waveguides ,DIODES - Abstract
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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