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Si/PEDOT: PSS solar cell is an optional photovoltaic device owing to its promising high photovoltaic conversion efficiency (PCE) and economic manufacture process. In this work, dopamine@graphene was firstly introduced between the silicon substrate and PEDOT:PSS film for Si/PEDOT: PSS solar cell. The dopamine@graphene was proved to be effective in improving the PCE, and the influence of mechanical properties of dopamine@graphene on solar cell performance was revealed. When dopamine@graphene was incorporated into the cell preparation, the antireflection ability of the cell was enhanced within the wavelength range of 300~450 and 650~1100 nm. The enhanced antireflection ability would benefit amount of the photon-generated carriers. The electrochemical impedance spectra test revealed that the introduction of dopamine@graphene could facilitate the separation of carriers and improve the junction quality. Thus, the short-circuit current density and fill factor were both promoted, which led to the improved PCE. Meanwhile, the influence of graphene concentration on device performances was also investigated. The photovoltaic conversion efficiency would be promoted from 11.06% to 13.15% when dopamine@graphene solution with concentration 1.5 mg/mL was applied. The achievements of this study showed that the dopamine@graphene composites could be an useful materials for high-performance Si/PEDOT:PSS solar cells. [ABSTRACT FROM AUTHOR]

n-Si/PEDOT: PSS heterojunction solar cells are expected to be the alternative for photovoltaic technique for the potentially excellent power conversion efficiency and ease of processing. Herein, a multi-walled carbon nanotubes network coated with polydopamine (MWCNTs&PDA) was applied as an interlayer between silicon substrate and PEDOT:PSS film to enhance the performance of Si/PEDOT:PSS heterojunction device in this study. When the film was applied as an interlayer, the average reflectance of the device within the wavelength range 400–1000 nm dropped from 13.6 % to 8.33 %. The enhanced antireflection ability meant more photon-generated carriers were excited. The introduction of PDA reduced the contact angle from 84.5° to 47° on Si surface, and the minority carrier lifetime (τ) was 2.16 times increase. The high charge separation and improved junction effect of MWCNTs&PDA films incorporated between PEDOT:PSS and Si substrate result in advantageous networks of charge carriers, which is confirmed by the excellent open-circuit voltage (V oc) 637 mV, short-circuit current density (J sc) J sc 34.76 mA/cm2 and fill factor (FF) 56.41 %. The power conversion efficiency improved to 12.49 % when the MWCNTs&PDA film was incorporated. The achievements of this study indicated that the MWCNTs coated with polydopamine as an interlayer is a promising material for excellent performance Si/PEDOT:PSS heterojunction solar devices. • MWCNTs&PDA films were inserted between PEDOT:PSS and Si by the solution method. • MWCNTs&PDA-inserted and optimized film was used for solar cell fabrication. • The performances of solar cells were improved by using MWCNTs&PDA films. • The MWCNTs concentration in MWCNTs&PDA solar cell devices affected antireflection. [ABSTRACT FROM AUTHOR]