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Ge1-xSnx photodetectors (PDs) have emerged as a new type of mid-infrared (MIR) CMOS-compatible PDs for a wide range of applications. Here we present a comprehensive theoretical study to evaluate the achievable performance of Ge1-xSnx p-i-n homojunction PDs with strain-free and defect-free Ge1-xSnx active layer for the purpose of demonstrating its potential in advancing the MIR detection technology. Starting from the Sn-composition-dependent band structures, the theoretical model calculates optical absorption, responsivity, dark current density, and detectivity. The results show that the optical responsivity can be enhanced with the Sn incorporation due to the improved optical absorption and the large mobilities and diffusion lengths of the photo-generated electrons and holes. The dark current density, however, increases with the increasing Sn composition. Our model suggests that not only the photodetection range of the Ge1-xSnx PDs can be extended to the MIR region but their detectivity at room temperature can be competitive with the existing MIR technology, and in some cases better than some commercial PDs operating at lower temperatures. This study establishes the ultimate performance that can be potentially achieved with the Ge1-xSnx MIR technology with the maturity of its material development in due time in addition to its much anticipated CMOS-compatible advantages.

Non-Hermitian photonics has attracted increasing attention especially for sensing applications. Two coupled optical systems, designed to work at the “exceptional point”, exhibit a strong spectral response to perturbations. Due to the enhanced sensitivity of exceptional points, they have been usually suggested as perfect candidates for high resolution sensing. The drawback of these configurations is their undesired sensitivity also to external fluctuations and noise that could eliminate the advantages of exceptional points. Recently, the concept of exceptional surface has been proposed to overcome this problem. In particular, coupling two counterpropagating modes in the same structure prevents differential noise in distinct cavities from affecting the exceptional-point condition. In this work we present a new configuration based on exceptional surfaces to design an optical accelerometer. The strong spectral response guaranteed by exceptional surfaces is used here to demonstrate the enhancement of the sensitivity of a Bragg grating-based optical accelerometer, reaching a value of 3 nm/g at 0.5 g.

Recently, non-Hermitian Hamiltonians have gained a lot of interest, especially in optics and electronics. In particular, the existence of real eigenvalues of non-Hermitian systems has opened a wide set of possibilities, especially, but not only, for sensing applications, exploiting the physics of exceptional points. In particular, the square root dependence of the eigenvalue splitting on different design parameters, exhibited by 2 × 2 non-Hermitian Hamiltonian matrices at the exceptional point, paved the way to the integration of high-performance sensors. The square root dependence of the eigenfrequencies on the design parameters is the reason for a theoretically infinite sensitivity in the proximity of the exceptional point. Recently, higher-order exceptional points have demonstrated the possibility of achieving the nth root dependence of the eigenfrequency splitting on perturbations. However, the exceptional sensitivity to external parameters is, at the same time, the major drawback of non-Hermitian configurations, leading to the high influence of noise. In this review, the basic principles of PT-symmetric and anti-PT-symmetric Hamiltonians will be shown, both in photonics and in electronics. The influence of noise on non-Hermitian configurations will be investigated and the newest solutions to overcome these problems will be illustrated. Finally, an overview of the newest outstanding results in sensing applications of non-Hermitian photonics and electronics will be provided.

The recent rapid progress in integrated photonics has catalyzed the development of integrated optical computing in this post-Moore's law era. Electronic-photonic digital computing, as a new paradigm to achieve high-speed and power-efficient computation, has begun to attract attention. In this paper, we systematically investigate the optical sequential logic and pipelining in electronic-photonic computing, which together offer a solution to potential problems in latency and power budget as the size of electronic-photonic computing circuits scales up considerably to achieve much more complex functions. Pipelining and sequential logic open up the possibility of high-speed very-large-scale electronic-photonic digital computing.

The GeSn detector offers high-performance Si-based infrared photodetectors with complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we report a comprehensive study...

This theoretical modeling and simulation paper presents designs and projected performance of non-volatile broadband on-chip 1 × 2 and 2 × 2 electro-optical switches operating in the telecommunication C-band and based on the silicon-on-insulator technological platform. These optical switches consist of an asymmetric two-waveguide directional coupler and a symmetric three-waveguide directional coupler, in which the optical phase change material Ge[subscript 2]Sb[subscript 2]Se[subscript 4]Te[subscript 1] (GSST) is the top cladding layer for one of the silicon strip waveguides. Reversible crossbar switching is attained by the amorphous (Am) to crystalline (Cr) and Cr-to-Am phase transitions in the GSST induced by heating the GSST in contact with an indium tin oxide (ITO) microstrip through Joule heating. We examined device performance in terms of mid-band insertion loss (IL), crosstalk (CT), and 0.3-dB IL bandwidth (BW). The 2 × 2 results were IL = -0.018 dB, CT < 31.3 dB, and BW = 58 nm for the coupling length Lc of 15.4 μm, and IL = 0.046 dB, CT < 38.1 dB, and BW = 70 nm for the coupling length Lc of 17.4 μm. Simulations of the 1 × 2 devices at 16.7-μm Lc revealed that IL = 0.083 dB and CT < 12.8 dB along with an expanded BW of 95 nm. Thermal simulations showed that a 5-V pulse train applied to 10[superscript 19]-cm[superscript -3] doped ITO would produce crystallization; however, the process of amorphization required a 24-V pulse of 2.9-μs duration to raise the GSST temperature above the melting temperature of 900 K., DARPA (Grant D18AP00070)

Lasing from direct bandgap group-IV GeSn alloys has opened a new venue for the development of Si-based monolithic laser. In this work, we demonstrate optically pumped GeSn lasers based on both ridge and planar waveguide structures. The near room temperature operation at 270 K was achieved with optically pumped edge-emitting devices. Moreover, due to the reduced side-wall surface recombination and improved thermal management, the 100 μm wide ridge waveguide laser features a lower lasing threshold compared to other devices. The advance reported in this work, enabled by the material growth via an industry standard chemical vapor deposition reactor and low-cost commercially available precursors, is a major step forward toward Si-based mid-infrared sources for photonics integration.

This theoretical modeling and simulation the design and projected performance of an on-chip detector of trace gases using photonic matched filters, with operation in the 3–5-μm mid-infrared range. The thermo-optically tuned multi-Sagnac loop Mach–Zehnder interferometer (MZI), based on the germanium-on-silicon nitride technological platform, has been adopted to detect the signature of gases with regularly spaced and narrow absorption lines. The MZI arms are comprised of an N -cascaded connection of Sagnac loop reflectors, each pair separated by a waveguide whose length is designed according to the line spacing of the gas under detection. Detection of one or two gas absorption bands using one filter band is achieved at the Drop port of an MZI filter having on each arm the apodized Hamming Bragg waveguide grating. We performed parametric analysis on the GON platform to find the design rules for the waveguide gas cell and the Hamming or multi-Sagnac filters targeted at CH4 or CO2 or N2O or SO2 or CO. The analysis predicted good sensor performance.

We report normal-incidence planar GeSn resonant-cavity-enhanced photodetectors (RCE-PDs) with a lateral p - i - n homojunction configuration on a silicon-on-insulator (SOI) platform for short-wave infrared (SWIR) integrated photonics. The buried oxide of the SOI platform and the deposited S i O 2 layer serve as the bottom and top reflectors, respectively, creating a vertical cavity for enhancing the optical responsivity. The planar p - i - n diode structure is favorable for complementary-metal-oxide-semiconductor-compatible, large-scale integration. With the bandgap reduction enabled by the 4.2% Sn incorporation into the GeSn active layer, the photodetection range extends to 1960 nm. The promising results demonstrate that the developed planar GeSn RCE-PDs are potential candidates for SWIR integrated photonics.

The maturity of integrated photonics enables many applications including high-performance computing. Digital photonic computing always considers resonator-based modulators as the key active components due to their compactness as compared to broad-spectrum Mach-Zehnder interferometers (MZIs). In this paper, we investigate the dual-nanobeam (NB) based MZI 2 × 2 switches with much smaller footprint for realizing electro-optical logic circuits. New logic gates and scalable circuits assisted by multiplexing techniques are proposed. Results show that the NB MZI is another promising candidate for electronic-photonic digital computing.

This theoretical simulation paper presents designs and projected performance of ∼1550-nm silicon-on-insulator (SOI) and ∼2000-nm Ge-on-Si-on-nitride and Ge-on-nitride 2×2 optical crossbar switches based upon a three-waveguide coupler in which the central waveguide is a nanobeam actuated by the thermo-optical (TO) effect. A TO heater stripe is located atop the central nanobeam. To implement accurate and realistic designs, the 3D finite difference time domain approach was employed. The metrics of crossbar switching, insertion loss (IL) and crosstalk (CT) were evaluated for choices of 3-waveguide structure parameters and TO-induced index changes. The predicted ILs and CTs were excellent, enabling the designed devices to be considered as fundamental building blocks in wavelength-division-multiplexed cross-connect (WXC) applications. Proposed here are compact, nonblocking space-and-wavelength routing switches to be constructed in a monolithic, industry-standard SOI chip (and in Ge-on-SON and GON chips). Specifics are given for realizing 16 × 16 × Mλ WXCs as well as reconfigurable, multi-resonant, programmable hexagonal and diamond meshes.

Silicon photonics is emerging as a competitive platform for electronic-photonic integrated circuits (EPICs) at the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. Here, we present a comprehensive theoretical study of GeSn vertical p-i-n homojunction waveguide photodetectors (WGPDs) that have a strain-free and defect-free GeSn active layer for 2-µm Si-based EPICs. The use of a narrow-gap GeSn alloy as the active layer can fully cover entire the 2 µm wavelength band. The waveguide structure allows for decoupling the photon-absorbing path and the carrier-collection path, thereby allowing for simultaneous achievement of high-responsivity and high-bandwidth (BW) operation at the 2-µm wavelength band. We present the theoretical models to calculate the carrier saturation velocities, optical absorption coefficient, responsivity, 3-dB bandwidth, zero-bias resistance, and detectivity, and optimize this device structure to achieve highest performance at the 2-µm wavelength band. The results indicate that the performance of the GeSn WGPD has strong dependence on the Sn composition and geometric parameters. The optimally designed GeSn WGPD with 10% Sn concentration can give responsivity of 1.55 A/W, detectivity of 6.12×1010 cmHz½W-1 at 2 µm wavelength, and ~97 GHz BW. Therefore, this optimally designed GeSn WGPD is a potential candidate for silicon photonic EPICs offering high-speed optical communications.

This theoretical modeling-and-simulation paper presents designs and projected performance of ∼1550-nm silicon-on-insulator beamsteering of a microwave phased array antenna by the use of true time delays. The tunable on-chip optical delay line is a cascade connection of waveguide Bragg grating resonators (WBGRs) separated by a piece of straight waveguide. The notch in the reflectivity spectrum is translated along the wavelength axis by means of a low-power TO heater stripe atop the grating, inducing a time delay that depends upon the line position of the WBGR affected by TO switching. The filter resonator is a new in-guide array of identical Bragg structures, each one comprising N closely coupled phase-shifted Bragg-grating resonators. The length of each grating cavity in an N group is chosen according to the Butterworth filter technique to provide one resonant spectral profile with 40 GHz optical bandwidth. Finally, we examined the performances of the beamformer system operating in the X and Ku bands, respectively. The investigation demonstrated that steering angles up to 48° are feasible by assuming a minimum steering angle of 8° and a minimum WBGR spacing of about 354 and 236 μ m for X and Ku bands, respectively.

Spiral waveguides on a new germanium-on-silicon nitride (GON) platform with a wide transparency and a large core-clad index contrast for mid-infrared (mid-IR) sensing applications are demonstrated. Spiral waveguide sensors with a low bending loss on this platform enable compact sensors for mid-IR absorption spectroscopy. A minimum volumetric concentration of 5% isopropanol (IPA) in an IPA-acetone mixture is measured. This detection limit is three times lower than the counterpart waveguide, fabricated on the regular germanium-on-silicon platform with similar propagation loss at 3.73 μm wavelength. This silicon-compatible GON sensor is promising for applications such as environmental studies, industrial leak detection, process control, medical breath analysis, and many more. NRF (Natl Research Foundation, S’pore) Published version

Photonic data routing in optical networks overcomes the limitations of electronic routers with respect to data rate, latency, and energy consumption while suffering from dynamic power consumption, non-simultaneous usage of multiple wavelength channels, and large footprints. Here we show the first hybrid photonic-plasmonic, non-blocking, broadband 5x5 router. The compact footprint (70 Tbps, thus demonstrating key features required by future high data-throughput optical networks., 12 pages, 4 figures

GeSn lasers enable the monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap material. The GeSn laser study recently moved from optical pumping into electrical injection. In this work, we present explorative investigations of GeSn heterostructure laser diodes with various layer thicknesses and material compositions. Cap layer material was studied by using Si 0.03 Ge 0.89 Sn 0.08 and Ge 0.95 Sn 0.05 , and cap layer total thickness was also compared. The 190 nm SiGeSn-cap device had threshold of 0.6 kA / cm 2 at 10 K and a maximum operating temperature ( T max ) of 100 K, compared to 1.4 kA / cm 2 and 50 K from 150 nm SiGeSn-cap device, respectively. Furthermore, the 220 nm GeSn-cap device had 10 K threshold at 2.4 kA / cm 2 and T max at 90 K, i.e., higher threshold and lower maximal operation temperature compared to the SiGeSn cap layer, indicating that enhanced electron confinement using SiGeSn can reduce the threshold considerably. The study of the active region material showed that device gain region using Ge 0.87 Sn 0.13 had a higher threshold and lower T max , compared to Ge 0.89 Sn 0.11 . The performance was affected by the metal absorption, free carrier absorption, and possibly defect density level. The maximum peak wavelength was measured as 2682 nm at 90 K by using Ge 0.87 Sn 0.13 in gain regions. The investigations provide directions to the future GeSn laser diode designs toward the full integration of group-IV photonics on a Si platform.

As one of major integrated microwave photonics (IMWP) platforms, Si photonics exhibits the intensity-dependent Kerr effect and two-photon absorption (TPA) with associated free carrier effects (FCE). At the commonly used 1.55 µm, TPA losses and the associated FCE would eventually limit the dynamic range of Si photonic links. Resonating structures such as ring resonators (RRs) experience enhanced nonlinear effects due to significant intensity buildup. According to the bandgap characteristics of Si, TPA can be eliminated at and beyond 2.2 µm. In this work, a systemic simulation of straight waveguides and RRs is performed at wavelengths from 1.55 to 2.2 µm where the wavelength-dependent TPA loss is investigated. Moreover, the Kerr effect leads to unwanted change of refractive index, which shifts the RR resonant wavelength at both 1.55 and 2.2 µm, thus needing shift compensation. Compensated RRs operating at 2.2 µm could open a new venue for Si photonics towards IMWP applications.

A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the hybrid III–V-on-Si integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits found with similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance toward Si-based mid-infrared laser sources for integrated photonics.

Designs and theoretical analysis are presented for a room temperature resonant-cavity-enhanced GeSn LED whose emission peaks at the 2 $\mu$m wavelength. The Ge/GeSn/Ge PIN hetero-diode of length 1 $\mu$m is embedded in a rib-type Ge-on-Si nanobeam having either 24 or 36 air holes. The maximum LED modulation bandwidth $f_{3\text{dB}}$ is proportional to the Purcell factor and is inversely proportional to $\tau _{s\,p0}$ the GeSn bulk spontaneous emission lifetime. For an emission linewidth of 200 nm and $\tau _{s\,p0}$ of 10 ns, an $f_{3\text{dB}}$ of 1.6 GHz is predicted.

Using the strip-guided “manufacturable” SOI/GeSn group-IV integrated-photonics platform operating at 1550 nm, we propose an optical-to-electrical-to-optical (O-E-O) device that can work either as a...

The difference between transverse electric (TE) and transverse magnetic (TM) mode-effective indices in a wave-guided angled multimode interferometer structure is found to produce practical polarization splitting (PS) in the silicon-on-insulator platform at 1550 nm. Simulations show that this PS offers competitive performance in low insertion loss (0.4 dB for TE and 0.8 dB for TM), high extinction ratio (ER) (27.6 dB for TE and 26.5 dB for TM), low cross talk (−27.3 dB for TE and −28.0 dB for TM), and a 53-nm bandwidth for ER>20 dB. The compact footprint (∼25 μm2), the identical single-mode input/output waveguides for integration without altering the cross section, and the simplicity in implementation are prominent advantages compared with prior art designs.

We present the first bistable 2 × 2 crossbar switches using dual suspended nanobeams with phase changing Ge2Sb2Se4Te1 (GSST) cladding material. The dual suspended nanobeam configuration gives a higher-temperature pulse that will efficiently change the phase of a nanoscale GSST cladding on each nanobeam cavity region. The compact resonant 2 × 2 Mach–Zehnder switch has stable cross and bar states corresponding to the amorphous and crystalline phases of the GSST, respectively. We have optimized the nanobeam design using 3D FDTD and have made detailed numerical simulations that predict low insertion loss and low crosstalk with ∼100 GHz bandwidth. Finally, the application of this device to N x N x Mλ wavelength cross-connect switching is presented. The unique integration of switch design elements presented in this paper enables, for the first time, the combination of nonvolatile resonant behavior, low switching power, low insertion loss and crosstalk, wide bandwidth, and fast switching times, for WDM switching applications.

We demonstrate accurate control of mode symmetry in suspended dual-nanobeam resonators on a silicon-on-insulator chip. Each nanobeam consists of a Fabry–Perot nanocavity bounded by tapered 1-D photonic crystals. Even and odd cavity-modes are formed due to lateral evanescent coupling between the two nanobeams. The odd cavity-mode can be excited by mode-symmetry-transforming Mach–Zehnder couplers. Modal contrasts over 27 dB are measured in fabricated structures. The influence of the optical field in the middle air slot on the background transmission and quality factors is discussed. The observed peak wavelength separations of the modes at various nanobeam spacings are in good agreement with simulation results. These nanobeam resonators are potentially useful in applications, such as ultrafast all-optical modulation, filtering, and switching.

In this theoretical work, we design elemental and higher-order wavelength-division-multiplexed cross-connects (WXCs): nonblocking space-and-wavelength routing switches to be constructed in a monolithic, industry-standard, silicon-on-insulator (SOI) chip operating at a center wavelength of 1550 nm. Each multi-spectral multi-crossbar 2×2 x Mλ “element” of the network switch is an M-fold cascade connection of λ-diverse SOI Mach-Zehnder interferometers (MZIs), each of which utilizes a nanobeam cavity in each MZI arm. Within the element, each MZI has an electro-optically (EO) controlled local PN-junction “depleter” embedded in each cavity. The cavity voltage commands are (0,0) or (V,V) where V is a “small” reverse bias. Each element can be reconfigured in 2 to 5 ps, depending on Q, with few-fJ/bit switching energy. For the M = 3 case, a compact 6-element 4×4×3λ WXC is presented. In addition, compact new designs are given for a 12-element 8×8×3λ WXC and for 16×16×8λ WXCs employing either 56 or 72 elements.

Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration, and significant progress in GeSn material development shows promise for such laser devices. While there are many reports focused on optically pumped lasers, in this work, we demonstrate electrically injected GeSn lasers on Si. We grew a GeSn/SiGeSn heterostructure diode on a Si substrate in a ridge waveguide laser device and tested it under pulsed conditions, giving consideration to the structure design to enhance the carrier and optical confinement. The peak linewidth of 0.13 nm (0.06 meV) and injection current curves indicated lasing, which was observed up to 100 K with emission peaks at 2300 nm. We recorded a threshold of 598 A / c m 2 at 10 K. The peak power and external quantum efficiency were 2.7 mW/facet and 0.3%, respectively. The results indicate advances for group-IV-based lasers, which could serve as a promising route for laser integration on Si.

The 2 µm wavelength band has recently gained increased attention for potential applications in next-generation optical communication. However, it is still challenging to achieve effective photodetection in the 2 µm wavelength band using group-IV-based semiconductors. Here we present an investigation of GeSn resonant-cavity-enhanced photodetectors (RCEPDs) on silicon-on-insulator substrates for efficient photodetection in the 2 µm wavelength band. Narrow-bandgap GeSn alloys are used as the active layer to extend the photodetection range to cover the 2 µm wavelength band, and the optical responsivity is significantly enhanced by the resonant cavity effect as compared to a reference GeSn photodetector. Temperature-dependent experiments demonstrate that the GeSn RCEPDs can have a wider photodetection range and higher responsivity in the 2 µm wavelength band at higher temperatures because of the bandgap shrinkage. These results suggest that our GeSn RCEPDs are promising for complementary metal-oxide-semiconductor-compatible, efficient, uncooled optical receivers in the 2 µm wavelength band for a wide range of applications.

The design, modeling, micro-fabrication, and characterization of an ultra-broadband Ge-on-Si waveguide polarization rotator are presented. The polarization rotator is based on the mode evolution approach where adiabatic symmetric and anti-symmetric tapers are utilized to convert from the fundamental transverse magnetic to electric mode. The device is shown to be extremely fabrication tolerant and simple to fabricate. The fabricated devices demonstrate a polarization extinction ratio of ≥15 dB over a 2 μm bandwidth (9–11 μm wavelength) with an average insertion loss of

The recent demonstration of the GeSn laser opened a promising route towards the monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn content is highly desirable to enhance the emission efficiency and to cover longer wavelength. This Letter reports optically pumped edge-emitting GeSn lasers operating at 3 μm, whose device structure featured Sn compositionally graded with a maximum Sn content of 22.3%. By using a 1950-nm laser pumping in comparison with a 1064-nm pumping, the local heating and quantum defect were effectively reduced, which improved laser performance in terms of higher maximum lasing temperature and lower threshold.

Energy-efficient tunability is highly desired for silicon photonic devices. We demonstrate a thermo-optic tunable filter with an ultra-high tuning efficiency based on a suspended photonic crystal nanobeam cavity. Attributed to the ultra-small mode volume and free-standing waveguide structure, a tuning efficiency of 21 nm/mW is achieved over a wide single-resonance tuning range of ∼43.9 nm. The 10%-90% switching times are 67.0 μs and 68.8 μs for the rising edge and the falling edge, respectively. The demonstrated energy-efficient tunable device can find applications in reconfigurable photonic integrated circuits.

This theoretical modeling-and-simulation paper presents designs and projected performance of ~1500-nm silicon-on-insulator 2 x 2 Mach-Zehnder interferometer (MZI) optical crossbar switches and tunable filters that are actuated by thermo-optical (TO) means. A TO heater stripe is assumed to be on the top of each waveguided arm in the interferometer. Each strip-waveguide arm contains an inline set of N-fold coupled, phase-shifted Bragg-grating resonators. To implement accurate and realistic designs, a mixed full-vectorial mathematical model based upon the finite-element, coupled-mode, and transfer-matrix approaches was employed. The Butterworth-filter technique for grating length and weighting was used. The resulting narrowband waveguide-transmission spectral shape was better-than-Lorentzian because of its steeper sidewalls (faster rolloff). The metrics of crossbar switching, insertion loss (IL) and crosstalk (CT), were evaluated for choices of grating strength and TO-induced change in the grating-waveguide refractive index. The predicted ILs and CTs were quite superior to those cited in the literature for experimental and theoretical MZI devices based upon silicon nanobeam resonators. This was true for the Type-I and Type-II resonator addressing discussed here. Finally, we examined the TO-tunable composite filter profiles that are feasible by connecting two or more Type-I MZIs in an optical series arrangement. A variety of narrow filter shapes, tunable over ~2 nm, was found.

This paper reports theoretical designs and simulations of electrooptical 2 × 2 switches and 1 × 1 loss modulators based upon GST-embedded SOI channel waveguides. It is assumed that the amorphous and crystalline phases of GST can be triggered electrically by Joule heating current applied to a 10-nm GST film sandwiched between doped-Si waveguide strips. TEo and TMo mode effective indices are calculated over 1.3 to 2.1-μm wavelength range. For 2 × 2 Mach–Zehnder and directional coupler switches, low insertion loss, low crosstalk, and short device lengths are predicted for 2.1 μm, although a decreased performance is projected for 1.55 μm. For 1.3–2.1 μm, the 1 × 1 EO waveguide has application as a variable optical attenuator and as a digital modulator, albeit with ≦100-ns state-transition time. Because the active material has two “stable” phases, the device holds itself in either state, and voltage needs to be applied only during transition.

Two fundamental principles of the mode-matching method-mode orthogonality and tangential field continuity conditions have been revisited in depth. With a finite number of modes employed in the conventional method, the tangential field continuity condition at the waveguide-discontinuity interface fails leading to a field mismatch error. We propose an alternate, superior mode-matching method implemented by reconstruction of the auxiliary coefficient matrix, rather than by applying the abovementioned continuity and orthogonality. Detailed transfer-matrix equations have been derived for the finite-mode-number case. We showed that the improved mode-matching method yields a smaller field mismatch error under equal computational effort. Examples of bent and faceted waveguide structure have been investigated and the numerical simulation results demonstrated that the newly proposed method has the merits of simple implementation, high accuracy, and high computational efficiency for application in high-index-contrast photonic integrated circuits.

In this Letter, we propose a broadband, nonvolatile on-chip switch design in the telecommunication C-band with record low loss and crosstalk. The unprecedented device performance builds on: 1) a new optical phase change material (O-PCM) Ge2Sb2Se4Te1 (GSST), which exhibits significantly reduced optical attenuation compared to traditional O-PCMs, and 2) a nonperturbative design that enables low-loss device operation beyond the classical figure-of-merit (FOM) limit. We further demonstrate that the 1-by-2 and 2-by-2 switches can serve as basic building blocks to construct nonblocking and nonvolatile on-chip switching fabric supporting arbitrary numbers of input and output ports.

This theoretical modeling and simulation paper presents design and projected performance of an on-chip thermo-optical multi Sagnac loop Mach–Zehnder interferometer (MZI), operating at C-band and 3300 nm for silicon-on-insulator and germanium-on-silicon technological platforms, respectively. The MZI arms are comprised of an N -cascaded connection of Sagnac loop reflectors, each pair separated by a waveguide whose length is designed according to the wavelength-channel spacing requirements. N is chosen according to the Butterworth filter technique to provide one spectral response having maximal flatness within the desired bandwidth. Switched, spatial routing of odd and even channels is achieved by shifting the Through and Drop MZI spectra along the wavelength axis by means of a low-power thermo-optical heater stripe atop each loop-connector that changes its effective refractive index appropriately. We examined the SOI device performance for wavelength-division multiplexed wavelength (de)interleving. The analysis predicted good performance in terms of bandwidth, insertion loss, and channel isolation for 200, 50, and 25 GHz channel spacing. For the Ge-on-Si Sagnac MZI operating in the mid infrared, we showed that a comb filter is feasible whose lines exactly match the spectral signature of methane for trace-gas sensing applications.

This theoretical modeling and simulation paper presents designs and projected performance of an on-chip digital Fourier transform spectrometer using a thermo-optical (TO) Michelson grating interferometer operating at ∼1550 and 2000 nm for silicon-on-insulator and for germanium-on-silicon technological platforms, respectively. The Michelson interferometer arms consist of two unbalanced tunable optical delay lines operating in the reflection mode. They are comprised of a cascade connection of waveguide Bragg grating resonators (WBGRs) separated by a piece of straight waveguide with lengths designed according to the spectrometer resolution requirements. The length of each WBGR is chosen according to the Butterworth filter technique to provide one resonant spectral profile with a bandwidth twice that of the spectrometer bandwidth. A selectable optical path difference (OPD) between the arms is obtained by shifting the notch in the reflectivity spectrum along the wavelength axis by means of a low-power TO heater stripe atop the WBGR, inducing an OPD that depends on the line position of the WBGR affected by TO switching. We examined the device performances in terms of signal recostruction in the radio-frequency (RF) spectrum analysis application at 1 GHz and at 1.5 GHz of spectrometer resolution. The investigation demonstrated that high-quality spectrum reconstruction is obtained for both Lorentzian and arbitrary input signals with a bandwidth up to 40 GHz. We also show that spectrum reconstruction of 100–200 GHz RF band input signals is feasible in the Ge-on-Si chips.

We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, indium-tin-oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with silicon-on-insulator platforms for low-cost manufacturing.

Germanium is becoming an important material for mid-infrared photonics, but the modulation mechanisms in Ge are not yet well understood. In this paper, we estimate the size of free-carrier electroabsorption and electrorefraction effects in germanium across the 2 to 16-μm wavelength range at 300 K. The predictions are based as much as possible upon experimental absorption data from the literature and are supported by extrapolations from experimental data using first-principle quantum theoretical modeling. We find that free-carrier absorption is substantially stronger in Ge than in Si.

Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 µm was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 × 109 cmHz1/2W−1 at 1.55 µm, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors.

A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.

We analyze a photonic integrated circuit (PIC) platform comprised of a crystalline Alsubx/subGasub1-x/subN optical guiding layer on an AlN substrate for the ultraviolet to visible (UV-vis) wavelength range. An Al composition of x~0.65 provides a refractive index difference of ~0.1 between Alsubx/subGasub1-x/subN and AlN, and a small lattice mismatch (1%) that minimizes crystal dislocations at the Alsubx/subGasub1-x/subN/AlN interface. This small refractive index difference is beneficial at shorter wavelengths to avoid extra-small waveguide dimensions. The platform enables compact waveguides and bends with high field confinement in the wavelength range from 700 nm down to 300 nm (and potentially lower) with waveguide cross-section dimensions comparable to those used for telecom PICs such as silicon and silicon nitride waveguides, allowing for well-established optical lithography. This platform can potentially enable cost-effective, manufacturable, monolithic UV-vis photonic integrated circuits.

This paper proposes and analyzes resonant Si-based electro-optical modulators and switches that use Ge-on-Sisub3/subNsub4/subnanobeams (NBs) operating at 2 to 5 µm wavelengths. The wavelength of operation can be extended to 15 µm by mounting the Ge channel waveguides on a bulk Si chip. Electrons and holes are injected into the intrinsic Ge NB cavity center via thin P- and N- doped Ge wings on the NB (a lateral PIN diode at ~0.5 V forward bias). Simulations of the carrier-induced resonance-wavelength shift-and-damping in a 1 × 1 modulator show 6 dB of extinction at ~60 fJ/bit over the mid infrared. The NB's active length is λ-scale. The cavity uses tapered-diameter air holes. Intensity modulation at ~1 Gb/s appears feasible. High-performance 2 × 2 switching is predicted by embedding one NB in each arm of a Mach-Zehnder device. The resonance of each identical NB is shifted by the same Δλ via carrier injection. Calculations show very low insertion loss and crosstalk in both the cross and bar states; however, the cross-to-bar energy, around 8 pJ/bit, is much higher than that in the 2 × 2 version that employs PN-junction carrier depletion.

We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range.

This publisher’s note corrects the funding section in J. Opt. Soc. Am. B35, 1921 (2018).JOBPDE0740-322410.1364/JOSAB.35.001921

Integrated optical computing attracts increasing interest recently as Moore's law approaches the physical limitation. Among all the approaches of integrated optical computing, directed logic that takes the full advantage of integrated photonics and electronics has received lots of investigation since its first introduction in 2007. Meanwhile, as integrated photonics matures, it has become critical to develop automated methods for synthesizing optical devices for large-scale optical designs. In this paper, we propose a general electro-optic (EO) logic in a higher level to explore its potential in integrated computing. Compared to the directed logic, the EO logic leads to a briefer design with shorter optical paths and fewer components. Then a comprehensive gate library based on EO logic is summarized. At last, an And-Inverter Graphs (AIGs) based automated logic synthesis algorithm is described as an example to implement the EO logic, which offers an instruction for the design automation of high-speed integrated optical computing circuits.

The complex Bragg-grating waveguide (CBGW) is a semiconductor strip channel with many side corrugations or teeth. The layer-peeling (LP) and layer-adding (LA) algorithms have shown that the CBGW can be designed to offer an arbitrary pre-selected spectral-transmission profile having multiple peaks, but such a structure generally requires a huge number of teeth and a long length scale. In this paper, we propose a modified LP/LA algorithm that can significantly reduce CBGW structure length and develop accompanying time/memory-saving simulation procedures. Dispersion engineering is also introduced to significantly improve the accuracy of the LP/LA algorithm for high-index-contrast structures. A CBGW for a transmission spectrum with three passbands is designed and optimized on the silicon-on-insulator platform. Results show that our design can shorten the length of the CBGW by 10 times compared to the original design by the LP algorithm. Compared to the original LP/LA algorithm, the modified algorithm with dispersion engineering significantly improves the matching between the reconstructed transmission and the actual spectrum obtained by simulation.

New continuously tunable RF-spectrum analyzers, RF receivers, and RF signal generators are proposed and analyzed for the silicon-on-insulator integrated-photonic platform at the ~1550 nm wavelength. These RF system-on-a-chip applications are enabled by a new narrowband 2x2 Mach-Zehnder interferometer (MZI) tuned filters for reconfigurable multiplexing, demultiplexing and RF channel selection. The filter can be optimized for ~100 MHz 3-dB bandwidth (BW) by utilizing N closely coupled Bragg-grating resonators to form one effective waveguide resonator in the single-mode silicon nanowire used for each MZI arm. The number of periods M within each individual resonator is selected to engineer BW in the 0.1 to 1 GHz range. Butterworth design is employed. Continuous tuning of the 100 MHz-BW devices over 18.6 GHz has been simulated by using local micron-scale thermo-optical heater stripes on the MZI arms with a temperature rise from 0 to 48K. For the case of N = 3 and 100-nm silicon side teeth, some representative performance predictions are: insertion loss (IL) = -10.7 dB, BW = 80.5 MHz and L = 113 μm for M = 58; while IL = -0.74 dB, BW = 1210 MHz and L = 86 μm for M = 44.

A new reconfigurable, tunable on-chip optical filter bank is proposed and analyzed for the silicon-on-insulator platform at the ~1550 nm wavelength. The waveguided bank is a cascade connection of 2 x 2 Mach-Zehnder interferometer (MZI) filters. An identical standing-wave resonator is situated in each MZI "arm." Using the thermo-optic (TO) effect to perturb this waveguide's index, the TO heater stripes provide continuous tuning of the filter by shifting the resonance smoothly along the wavelength axis. To reconfigure and program the cascade array, a broadband 2 x 2 MZI-related switch is inserted between adjacent filters. The novel TO switch, described here, can provide either single or double interconnection of 2 x 2 filters. The filter resonator is a new in-guide array of N closely coupled phase-shifted Bragg-grating resonators that provide one resonant spectral profile with 5 to 100 GHz bandwidth. The length of each grating cavity in the N group is chosen according to the Butterworth filter technique, and this gives high peak transmission for the composite. The predicted spectral profiles of a three-stage cascade show two-or-three peaks, or two-or-three notches with movable wavelength-locations as well as tunable wavelength-separations between those features. A tunable notch within a wider movable passband is also feasible. Potential applications include microwave photonics, wavelength-selective systems, optical spectroscopy and optical sensing.