1. Sacrificial Structure for Effective Sapphire Substrate Liftoff Based on Photoelectrochemical Etching
- Author
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Chia-Ying Su, Ting-Ta Chi, Chih-Chung Yang, Yean-Woei Kiang, Chieh Hsieh, and Chi-Ming Weng
- Subjects
Materials science ,business.industry ,Gallium nitride ,Surface finish ,Epitaxy ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,chemistry.chemical_compound ,chemistry ,Etching (microfabrication) ,law ,Optoelectronics ,Wafer ,Electrical and Electronic Engineering ,business ,Layer (electronics) ,Diode ,Light-emitting diode - Abstract
The photoelectrochemical (PEC) liftoff results and the performances of fabricated vertical light-emitting diodes (LEDs) among four samples of different PEC etching sacrificial structures are compared. With a dopant-graded n-GaN sacrificial layer, the PEC liftoff time is decreased. With an n-AlGaN etching-stop layer, the roughness of PEC-etching surface is significantly reduced for simplifying the following device process. Illuminated by an ultraviolet LED array at 365 nm in emission wavelength, the PEC liftoff of a 2-in wafer with device isolation can be completed in 25 min. The performances of the fabricated vertical LEDs with different sacrificial structures are similar.
- Published
- 2015
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