1. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition.
- Author
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Amani, Matin, Chin, Matthew L., Birdwell, A. Glen, O'Regan, Terrance P., Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., Lou, Jun, and Dubey, Madan
- Subjects
FIELD-effect transistors ,CHEMICAL vapor deposition ,SCANNING probe microscopy ,ATOMIC force microscopy ,ATOMIC layer deposition - Abstract
Molybdenum disulfide (MoS2) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm2/V s at 300 K without a high-κ dielectric overcoat and increased to 16.1 cm2/V s with a high-κ dielectric overcoat. In addition the devices show on/off ratios ranging from 105 to 109. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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