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Interband transition energies and carrier distributions of the CdxZn1-xTe/ZnTe quantum wires (QWRs) were calculated by using a finite-difference method (FDM) taking into account shape-based strain effects. The shape of the CdxZn1-xTe/ZnTe QWRs was modeled to be approximately a half-ellipsoidal cylinder on the basis of the atomic force microscopy image. The excitonic peak energies corresponding to the ground electronic subband and the ground heavy-hole band (E1-HH1) at several temperatures, as determined from the FDM calculations taking into account strain effects, were in qualitatively reasonable agreement with those corresponding to the (E1-HH1) excitonic transition, as determined from the temperature-dependent photoluminescence spectra. [ABSTRACT FROM AUTHOR]

The structural properties and the shape of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular beam epitaxy and atomic layer epitaxy were determined by using atomic force microscopy (AFM) measurements, and the interband transitions in the CdTe/ZnTe QWRs were investigated by using temperature-dependent photoluminescence (PL) measurements. The shape of the CdTe/ZnTe QWRs on the basis of the AFM image was modeled to be a half-ellipsoidal cylinder approximately. The temperature-dependent PL spectra showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E1-HH1) shifted to lower energy with increasing temperature. Strain distributions and electronic subband energies at several temperatures were numerically calculated by using a finite-difference method (FDM) with and without taking into account shape-based strain and nonparabolicity effects. The excitonic peak corresponding to (E1-HH1) interband transitions, as determined from the PL spectra, was in reasonable agreement with that corresponding to the (E1-HH1) transitions obtained, as determined from the FDM calculations taking into account shape-based strain and nonparabolicity effects. The present results help improve understanding of the electronic structures of CdTe/ZnTe QWRs. [ABSTRACT FROM AUTHOR]